公开(公告)号：DE69309660D1

公开(公告)日：1997-05-15

申请号：DE69309660

申请日：1993-04-26

Applicant: CONS RIC MICROELETTRONICA

Inventor： PALARA SERGIO ,  TAGLIAVIA DONATO ,  SUERI STEFANO

IPC: H03K17/08

公开(公告)号：DE69308131D1

公开(公告)日：1997-03-27

申请号：DE69308131

申请日：1993-08-18

Applicant: CONS RIC MICROELETTRONICA

Inventor： AIELLO NATALE ,  PALARA SERGIO ,  SCACCIANOCE SALVATORE

IPC: H03G11/00 ,  H03K17/0812 ,  H03K17/082 ,  H03K17/16 ,  H03K17/08

公开(公告)号：DE68921004T2

公开(公告)日：1995-09-21

申请号：DE68921004

申请日：1989-11-17

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： ZISA MICHELE ,  SCILLA GIUSEPPE ,  PALARA SERGIO

IPC: H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14

Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

公开(公告)号：ITMI913159A1

公开(公告)日：1993-05-27

申请号：ITMI913159

申请日：1991-11-26

Applicant: CONS RIC MICROELETTRONICA

Inventor： PALARA SERGIO

IPC: H01L20060101 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/08 ,  H01L29/73 ,  H01L29/732

公开(公告)号：ITMI911390A1

公开(公告)日：1992-11-22

申请号：ITMI911390

申请日：1991-05-21

Applicant: CONS RIC MICROELETTRONICA

Inventor： PALARA SERGIO ,  SUERI STEFANO

IPC: H03K17/14 ,  H01L20060101 ,  H03K17/042 ,  H03K17/64

公开(公告)号：ITMI911266A1

公开(公告)日：1992-11-09

申请号：ITMI911266

申请日：1991-05-09

Applicant: CONS RIC MICROELETTRONICA

Inventor： PALARA SERGIO ,  SUERI STEFANO

IPC: H02H7/00 ,  F02P3/04 ,  H01L20060101 ,  H02H7/12 ,  H03K3/286 ,  H03K17/082

公开(公告)号：DE69416595D1

公开(公告)日：1999-03-25

申请号：DE69416595

申请日：1994-11-30

Applicant: ST MICROELECTRONICS SRL

Inventor： PALARA SERGIO

IPC: H01L29/772 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/76 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/64

公开(公告)号：IT1236627B

公开(公告)日：1993-03-25

申请号：IT2210489

申请日：1989-10-24

Applicant: ST MICROELECTRONICS SRL

Inventor： PALARA SERGIO ,  PAPARO MARIO ,  PELLICANO' ROBERTO

IPC: G05F1/56 ,  G05F3/22 ,  G05F1/10 ,  H01F7/18 ,  H03K17/16 ,  H03K17/615 ,  H02H ,  H01L

Abstract: The limiting circuit comprises a comparator (B), which makes the comparison between the output voltage (Vc) of the power device (T5, T6) and a predetermined reference voltage (Vrif). In the case wherein the output voltage (Vc) is just below the reference voltage (Vrif) the comparator (B) supplies a current to the load (L) suitable for preventing the output voltage from falling further below said reference voltage (Vrif).

公开(公告)号：DE69633004D1

公开(公告)日：2004-09-02

申请号：DE69633004

申请日：1996-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： PALARA SERGIO

IPC: H01L21/331 ,  H01L29/73 ,  H01L29/732

Abstract: A vertical structure, integrated bipolar transistor incorporating a current sensing resistor, comprises a collector region (1), a base region (3) overlying the collector region, and an emitter region over the base region. The emitter region comprises a buried region (5), a surface region (7), and a first vertical diffusion region (6) connecting the buried layer (5) to the surface region (7). A second vertical diffusion region (8) connects the buried emitter layer (5) periphery to a first surface contact (11), while the surface emitter region (7) is contacted, along three peripheral sides thereof, by a second surface contact (10). The transistor current flows from the substrate (1), through the base (3) to the buried emitter region (5). It is then conveyed into the vertical region (6), which represents a resistive path (R1), and on reaching the surface region (7) splits between two resistive paths (R2) included between the vertical region (6) and the surface contacts (10). These resistive paths form in combination the current sensing resistor incorporated to the transistor, whose terminals are led to the first (11) and second (10) surface contacts, respectively.

公开(公告)号：DE69527702T2

公开(公告)日：2002-12-05

申请号：DE69527702

申请日：1995-04-28

Applicant: ST MICROELECTRONICS SRL ,  DAIMLER CHRYSLER CORP

Inventor： PALARA SERGIO ,  DI CICCO BEN

IPC: F02P17/12 ,  G01R29/027 ,  H01T13/60 ,  F02P1/00 ,  F02P17/00 ,  G01R31/38

Abstract: The invention concerns a method of detecting a spark produced by means of a spark coil (L) having a primary circuit (L') connected to a supply voltage generator (Vb) and a secondary circuit (L'') with the spark coil (L) being inserted in an electronic ignition device of an internal combustion motor. The method consists of the following phases: generation of a voltage signal (U) proportional to a voltage (VL) present on the primary circuit of the spark coil (L), comparison of the voltage signal (U) with a first, upper, threshold value (U1) by means of a comparator (C) with hysteresis, comparison by means of said comparator (C) of the voltage signal (U) with a second, lower, threshold value (U2) proportional to the supply voltage (Vb), detection of the duration of a voltage (Vc) output from the comparator (C), and signalling of the presence of the spark if said duration is greater than a reference value (B).