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    Light-emitting device
    51.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08916884B2

    公开(公告)日：2014-12-23

    申请号：US13851997

    申请日：2013-03-28

    Applicant: Epistar Corporation

    Inventor： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

    IPC: H01L27/15 ,  H01L21/00 ,  H01L33/42 ,  H01L33/38

    CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending portion which does not overlap the second conductivity type semiconductor layer; a first electrode substantially joined with only the first extending portion or a part of the first extending part; and a second electrode substantially joined with only the second extending portion or a part of the second extending portion.

    Abstract translation: 公开了一种发光器件，包括：具有长度和宽度的发光叠层，包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 和有源层上的第二导电类型半导体层; 导电层，其宽度大于第一导电类型半导体层的宽度，并且在第一导电类型半导体层下方，导电层包括与第一导电类型半导体层重叠的第一重叠部分和不与第一导电类型半导体层重叠的第一延伸部分 重叠第一导电类型半导体层; 透明导电层，其宽度大于第二导电类型半导体层上的第二导电类型半导体层的宽度，透明导电层包括与第二导电类型半导体层重叠的第二重叠部分和与第二导电类型半导体层重叠的第二延伸部分 不与第二导电类型半导体层重叠; 第一电极，仅基本上与第一延伸部分或第一延伸部分的一部分连接; 以及仅与第二延伸部分或第二延伸部分的一部分基本上接合的第二电极。

    Light-emitting device
    52.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08912564B2

    公开(公告)日：2014-12-16

    申请号：US14072764

    申请日：2013-11-05

    Applicant: Epistar Corporation

    Inventor： Yi-Ming Chen ,  Min-Hsun Hsieh ,  Chia-Liang Hsu

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/40 ,  H01L33/38 ,  H01L33/62 ,  H01L33/10 ,  H01L33/44

    CPC classification number: H01L33/08 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting device includes a plurality of physically separated light-emitting units formed on a single substrate: a contact layer formed on a first side of the light-emitting units ; a first electrode formed on a second side of the light-emitting units: a conductive post formed between the first electrode and the contact layer; an electrical connection structure electrically connecting a first one of the light-emitting units with another a second one of the light-emitting units; a reflective layer formed between the first one of light-emitting units and the first electrode; a first conductive layer comprising a plurality of contacts formed between the first one of the light-emitting units and the reflective layer; and a second conductive layer formed between the reflective layer and the first conductive layer.

    Abstract translation: 发光装置包括形成在单个基板上的多个物理分离的发光单元：形成在发光单元的第一侧上的接触层; 形成在所述发光单元的第二侧上的第一电极：形成在所述第一电极和所述接触层之间的导电柱; 电连接结构，电连接所述发光单元中的第一发光单元与所述发光单元中的第二发光单元; 在所述第一发光单元和所述第一电极之间形成的反射层; 第一导电层，包括形成在所述第一发光单元和所述反射层之间的多个触点; 以及形成在所述反射层和所述第一导电层之间的第二导电层。

    Light-emitting device
    53.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US12074252B2

    公开(公告)日：2024-08-27

    申请号：US17947526

    申请日：2022-09-19

    Applicant: EPISTAR CORPORATION

    Inventor： Chung-Hao Wang ,  Yu-Chi Wang ,  Yi-Ming Chen ,  Yi-Yang Chiu ,  Chun-Yu Lin

    IPC: H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46

    CPC classification number: H01L33/20 ,  H01L33/22 ,  H01L33/387 ,  H01L33/46 ,  H01L33/0093

    Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 μm to 1 μm.

    LIGHT-EMITTING DEVICE
    55.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20210043803A1

    公开(公告)日：2021-02-11

    申请号：US16987994

    申请日：2020-08-07

    Applicant: EPISTAR CORPORATION

    Inventor： Chung-Hao WANG ,  Yu-Chi Wang ,  Yi-Ming Chen ,  Yi-Yang Chiu ,  Chun-Yu Lin

    IPC: H01L33/20 ,  H01L33/46 ,  H01L33/22 ,  H01L33/38

    Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure. There is a first distance between the electrode and the nearest contact portion, and a ratio of the first distance to the thickness of the semiconductor stack is larger than 5.

    Light-emitting device
    58.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10014441B2

    公开(公告)日：2018-07-03

    申请号：US14579807

    申请日：2014-12-22

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

    IPC: H01L33/00 ,  H01L33/42 ,  H01L33/38

    CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L2924/00 ,  H01L2924/0002

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

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