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    52.
    发明专利
    未知

    公开(公告)号：DE102004032605B4

    公开(公告)日：2007-12-20

    申请号：DE102004032605

    申请日：2004-07-05

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MAHLER JOACHIM

    IPC: H01L23/50 ,  H01L21/50 ,  H01L23/42

    Abstract: A semiconductor device with a semiconductor chip and electrical connecting elements to a conductor structure, and a method for producing the same is disclosed. In one embodiment, the conductor structure has a chip island and contact terminal areas. These are arranged in a coplanar manner in relation to each other. The semi-conductor structure is selectively coated by a filled plastic film. Both the semiconductor chip and the electrical connecting elements are mechanically fixed and electrically connected by means of the film-covered chip island and the film-covered contact terminal areas, respectively.

    53.
    发明专利
    未知

    公开(公告)号：DE102006016345A1

    公开(公告)日：2007-10-18

    申请号：DE102006016345

    申请日：2006-04-05

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： BAUER MICHAEL ,  KESSLER ANGELA ,  MAHLER JOACHIM ,  HAIMERL ALFRED

    IPC: H01L25/04 ,  H01L21/50 ,  H01L23/48 ,  H01L23/498

    Abstract: The invention relates to a semiconductor module comprising stacked discrete components and a method for producing the same. In one embodiment, the semiconductor module has a semiconductor chip arranged on a wiring substrate. The discrete components are arranged and wired on an intermediate carrier, which is electrically connected to the wiring substrate and/or the semiconductor chip. The wiring substrate carries the semiconductor chip, the semiconductor chip carries the intermediate carrier and the intermediate carrier carries the discrete components.

    Semiconductor component has component parts comprising a wiring substrate with structured metallization, a ceramic substrate with a structured metal layer, flat conductor framework, a semiconductor chip and bond wires
    57.
    发明专利
    Semiconductor component has component parts comprising a wiring substrate with structured metallization, a ceramic substrate with a structured metal layer, flat conductor framework, a semiconductor chip and bond wires 未知

    公开(公告)号：DE102005047856A1

    公开(公告)日：2007-04-19

    申请号：DE102005047856

    申请日：2005-10-05

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： TANG SEOW MUN ,  MAHLER JOACHIM

    IPC: H01L23/16 ,  H01L21/50 ,  H01L23/50

    Abstract: Semiconductor component has component parts comprising wiring substrate (17) with structured metallization, a ceramic substrate with a structured metal layer, flat conductor framework, semiconductor chip and bond wires (14), which are embedded in plastic housing body (2). Surfaces of the component parts exhibit a thermoplastic buffer layer (5), which is arranged between the component parts and the plastic housing body. The flat conductor framework exhibits chip island and internal flat conductor. Semiconductor component has component parts comprising wiring substrate (17) with structured metallization, a ceramic substrate with a structured metal layer, flat conductor framework, semiconductor chip and bond wires (14), which are embedded in plastic housing body (2). Surfaces of the component parts exhibit a thermoplastic buffer layer (5), which is arranged between the component parts and the plastic housing m. The flat conductor framework exhibits chip island and internal flat conductor, which passes over an outside of the plastic housing body in external flat conductor as external contacts. The thermoplastic material (6) exhibits a glass transition temperature (Tg) of less than 120[deg]C, a melting temperature (Tm) of greater than 260[deg]C, a middle thickness of 2-50 nm and an epoxy adhesive agent that is coated on the thermoplastic material. The adhesive agent is metallic oxide or semiconductor oxide or mixtures of these substances. The porosity of the buffer layer of a nonporous coating gradually increases on the surfaces of the component parts to a micro-porous morphology in the transition area at the plastic housing body. Independent claims are included for: (a) a system support for the semiconductor component; and (b) procedure for the production of the system support and the semiconductor component.

    58.
    发明专利
    未知

    公开(公告)号：DE102005027356A1

    公开(公告)日：2006-12-28

    申请号：DE102005027356

    申请日：2005-06-13

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HOSSEINI KHALIL ,  KOENIGSBERGER ALEXANDER ,  OTREMBA RALF ,  MAHLER JOACHIM ,  SCHLOEGEL XAVER ,  SCHIESS KLAUS

    IPC: H01L25/07 ,  H01L21/50

    Abstract: A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition.

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