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    51.
    发明专利
    未知

    公开(公告)号：DE69627645D1

    公开(公告)日：2003-05-28

    申请号：DE69627645

    申请日：1996-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  VILLA FLAVIO

    IPC: G01L9/06 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L29/84

    Abstract: The pressure sensor is integrated in a SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements (10) and the electronic components (4, 6-8) integrated in the same chip, trenches (26) are formed in the upper wafer (23) of the substrate and extending from the surface to the layer of insulating material (22); the layer of insulating material (22) is chemically etched through the trenches (26) to form an opening (31) beneath the diaphragm (27); and a dielectric layer (25) is deposited to outwardly close the trenches (26) and the opening (31). Thus, the process is greatly simplified, and numerous packaging problems eliminated.

    52.
    发明专利
    未知

    公开(公告)号：DE69617674T2

    公开(公告)日：2002-08-08

    申请号：DE69617674

    申请日：1996-09-10

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MASTROMATTEO UBALDO

    IPC: G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  G01P15/11 ,  H01L29/84 ,  G01P1/00

    Abstract: An acceleration sensor is described which is formed by planar technology on a substrate (10). It includes a core (11) of ferromagnetic material and, coupled conductively together by the core, a first winding (13) adapted to be connected to a power supply (14) and a second winding (15) adapted to be connected to circuit means (16) for measuring an electrical magnitude induced therein. The core (11) has two suspended portions which are free to bend as a result of an inertial force due to an accelerative movement of the sensor itself. The bending causes lengthening of the core (11) and hence a variation in the reluctance of the magnetic circuit. If a constant current is supplied to the first winding (13), a voltage is induced in the second winding (15) as a result of the variation in the magnetic flux caused by the variation in reluctance.

    53.
    发明专利
    未知

    公开(公告)号：ITTO20001067A1

    公开(公告)日：2002-05-14

    申请号：ITTO20001067

    申请日：2000-11-14

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  SASSOLINI SIMONE ,  ZERBINI SARAH ,  BALDO LORENZO

    IPC: G11B5/596

    Abstract: Described herein is a read/write transducer for a hard disk drivewith dual actuation stage, comprising at least one hard disk and at least one suspension carrying the read/write transducer. The read/write transducer comprises a supporting body having a substantially parallelepipedal shape, a read/write head arranged on a front face of the supporting body, and a grating defined on one of the side faces of the supporting body during the process of manufacture of the read/write transducer. The grating enables measurement of the position of the read/write transducer with respect to the corresponding suspension in an optical way using a laser transmitter emitting and directing towards the grating a laser beam, and a laser receiver arranged to intercept the laser beam reflected by the grating and outputting a position signal on the basis of which it is possible to calculate, in a simple way, the position of the read/write transducer with respect to the corresponding suspension.

    56.
    发明专利
    未知

    公开(公告)号：DE69933370D1

    公开(公告)日：2006-11-09

    申请号：DE69933370

    申请日：1999-07-15

    Applicant: ST MICROELECTRONICS SRL

    Inventor： MASTROMATTEO UBALDO ,  ZERBINI SARAH ,  SASSOLINI SIMONE ,  VIGNA BENEDETTO

    IPC: G11B5/55 ,  G11B5/596 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G11B5/127 ,  G11B5/56 ,  G11B21/02 ,  G11B21/08 ,  G11B21/10 ,  G11B21/21 ,  H01L21/20 ,  H01L21/304 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

    Abstract: The process for assembling a microactuator (10) on a R/W transducer (6) comprises the steps of: forming a first wafer (11) of semiconductor material comprising a plurality of microactuators (10) including suspended regions (15) and fixed regions (22) separated from each other by first trenches (24); forming a second wafer (25) of semiconductor material comprising blocking regions (27, 27') connecting mobile (29') and fixed (29") intermediate regions separated from each other by second trenches (33a); bonding the two wafers (11, 25) so as to form a composite wafer (39) wherein the suspended regions (15) of the first wafer (11) are connected to the mobile intermediate regions (29') of the second wafer (25), and the fixed regions (22) of the first wafer are connected to the fixed intermediate regions (29") of the second wafer; cutting the composite wafer (39) into a plurality of units (41); fixing the mobile intermediate region (29') of each unit (41) to a respective R/W transducer (6); and removing the blocking regions (27'). The blocking regions (27') are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.

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