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    SOI/GLASS PROCESS FOR FORMING THIN SILICON MICROMACHINED STRUCTURES
    51.
    发明申请
    SOI/GLASS PROCESS FOR FORMING THIN SILICON MICROMACHINED STRUCTURES 审中-公开
    用于形成薄硅微结构的SOI /玻璃工艺

    公开(公告)号：WO02057180A2

    公开(公告)日：2002-07-25

    申请号：PCT/US2001/050089

    申请日：2001-12-20

    IPC: B81B3/00 ,  B81C1/00 ,  H01L27/12

    CPC classification number: B81C1/0015 ,  B81B2201/0228 ,  B81C2201/019 ,  H01L27/12 ,  H01L27/1203

    Abstract: Methods for making thin silicon layers suspended over recesses (30) in glass wafers (22). One method includes providing a thin silicon-on-insulator (SOI) wafer (21), and a glass wafer (22). The SOI wafer (21) can include a silicon oxide layer (50) disposed between a first undoped or substantially undoped silicon layer (20) and a second silicon layer (60). Recesses (30) can be formed in the glass wafer surface (24) and electrodes (38) may be formed on the glass wafer surface (24). The first silicon layer (20) of the SOI wafer (21) is then bonded to the glass wafer surface (24) having the recesses (30), and the second silicon layer (60) is subsequently removed using the silicon oxide layer (50) as an etch stop. Next, the silicon oxide layer (50) is removed. The first silicon layer (20) can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer (120) has a patterned metal layer (129) positioned adjacent the recesses (30) in the glass wafer (22). The, the second silicon layer (60) is removed using the silicon oxide layer (50) as an etch stop, and the silicon oxide layer (50) is subsequently removed. The first silicon layer (120) is then etched using the patterned metal layer (129) as an etch stop. The patterned metal layer (120) is then removed.

    Abstract translation: 使薄硅层悬浮在玻璃晶片（22）中的凹槽（30）上的方法。 一种方法包括提供薄的绝缘体上硅（SOI）晶片（21）和玻璃晶片（22）。 SOI晶片（21）可以包括设置在第一未掺杂或基本未掺杂的硅层（20）和第二硅层（60）之间的氧化硅层（50）。 可以在玻璃晶片表面（24）中形成凹部（30），并且可以在玻璃晶片表面（24）上形成电极（38）。 然后将SOI晶片（21）的第一硅层（20）接合到具有凹陷（30）的玻璃晶片表面（24），并且随后使用氧化硅层（50）去除第二硅层（60） ）作为蚀刻停止。 接下来，去除氧化硅层（50）。 然后可以蚀刻第一硅层（20）以形成所需的结构。 在另一说明性实施例中，第一硅层（120）具有与玻璃晶片（22）中的凹部（30）相邻的图案化金属层（129）。 使用氧化硅层（50）作为蚀刻停止层去除第二硅层（60），随后除去氧化硅层（50）。 然后使用图案化金属层（129）作为蚀刻停止层蚀刻第一硅层（120）。 然后去除图案化的金属层（120）。

    MICRODEVICE AND ITS PRODUCTION METHOD
    52.
    发明申请
    MICRODEVICE AND ITS PRODUCTION METHOD 审中-公开
    MICRODEVICE及其生产方法

    公开(公告)号：WO01053194A1

    公开(公告)日：2001-07-26

    申请号：PCT/JP2000/000222

    申请日：2000-01-19

    IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P1/02 ,  G01P15/08 ,  G01P15/125 ,  G02B26/08 ,  H01L29/84

    CPC classification number: G01P15/125 ,  B81B2201/0228 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00579 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10T29/49002 ,  Y10T29/49117

    Abstract: A microdevice comprises an insulator base having a recess therein and a beamlike silicon structural body provided in the front side of the base and surrounding the recess. The beamlike structural body includes a functional section that comprises a support joined to the base, a cantilevered beam integrated with the support and extending over the recess, and a conductive film formed at least over the surface of the recess immediately under the cantilevered beam and electrically connected to the support. The conductive film serves to prevent the recess from being charged positively during dry etching. Therefore the etching gas having positive charge is repelled by the electrical repulsive force exerted by the recess and do not corrode the structural body. Thus such a microdevice has a beamlike structural body of high shape and dimensional precisions, providing high reliability and high degree of freedom of design.

    Abstract translation: 微型装置包括其中具有凹部的绝缘体基座和设置在基座的前侧并围绕凹部的梁状硅结构体。 梁状结构体包括功能部分，其包括连接到基部的支撑件，与支撑件一体化并在凹部上延伸的悬臂梁，以及形成在悬臂梁正下方的至少在凹部的表面上的导电膜， 连接到支持。 导电膜用于防止凹痕在干蚀刻期间被正电充电。 因此，具有正电荷的蚀刻气体被凹部施加的电斥斥力排斥，并且不会腐蚀结构体。 因此，这种微型装置具有高度形状和尺寸精度的梁状结构体，提供高可靠性和高设计自由度。

    MEMS STRUCTURE
    59.
    发明申请
    MEMS STRUCTURE 有权
    MEMS结构

    公开(公告)号：US20170073216A1

    公开(公告)日：2017-03-16

    申请号：US15361972

    申请日：2016-11-28

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Tsuyoshi Okami ,  Takashi Mizota ,  Yuki Ueya ,  Junya Matsuoka ,  Nobuaki Tsuji

    IPC: B81B3/00 ,  G01C19/5762

    CPC classification number: B81B3/0021 ,  B81B3/00 ,  B81B3/0045 ,  B81B2201/0228 ,  B81B2201/0242 ,  B81B2203/0154 ,  G01C19/5762 ,  H01L41/113 ,  H01L41/1132 ,  H01L41/125

    Abstract: A MEMS structure includes a planar substrate, a support body coupled to the planar substrate, a fixed electrode coupled to the planar substrate and a moveable portion. The movable portion is spaced from and faces the fixed electrode. The movable electrode includes a movable weight and an intermediate frame surrounding an outer edge of the movable weight. A plurality of elastic supports connect the movable weight to the intermediate frame. The elastic supports are elastically deformable in a first direction extending parallel to the plane of the substrate such that the movable weight can move in the first direction. At least one torsion bar pivotally connects one end of the intermediate frame to the support body so as to allow the intermediate frame, and with it the movable weight, to pivot around an axis which extends parallel to the plane of the substrate and perpendicular to the first direction.

    Abstract translation: MEMS结构包括平面基板，耦合到平面基板的支撑体，耦合到平面基板的固定电极和可移动​​部分。 可动部与固定电极间隔开并面对固定电极。 可移动电极包括可移动重物和围绕可移动重物的外边缘的中间框架。 多个弹性支撑件将可移动重物连接到中间框架。 弹性支撑件可在平行于基板的平面延伸的第一方向上弹性变形，使得可移动的重物能够沿第一方向移动。 至少一个扭力杆将中间框架的一端枢转地连接到支撑体，以便允许中间框架，并且与其一起移动的重物围绕平行于基板平面延伸的轴线并垂直于 第一个方向

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