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公开(公告)号:US12077429B2
公开(公告)日:2024-09-03
申请号:US17421330
申请日:2020-02-27
Applicant: Robert Bosch GmbH
Inventor: Lars Tebje , Jochen Reinmuth , Johannes Classen
IPC: B81B7/02 , B81C1/00 , G01C19/5783 , G01L7/08 , G01L19/00 , G01P15/08 , G01P15/125
CPC classification number: B81B7/02 , B81C1/00341 , G01C19/5783 , G01L7/082 , G01L19/0092 , G01P15/0802 , G01P15/125 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0127 , B81B2203/04 , B81C2201/0105 , B81C2201/014
Abstract: A micromechanical sensor device and a corresponding production method. The micromechanical sensor device has a substrate which has a front side and a rear side. Formed on the front side, at a lateral distance, are an inertial sensor region having an inertial structure for acquiring external accelerations and/or rotations, and a pressure sensor region having a diaphragm region for acquiring an external pressure. A micromechanical function layer by which the diaphragm region is formed in the pressure sensor region. A micromechanical function layer is applied on the micromechanical function layer, the inertial structure being formed out of the second and third micromechanical function layer. A cap device encloses a first predefined reference pressure in a first cavity in the inertial sensor region, and a second cavity is formed underneath the diaphragm region.
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公开(公告)号:US12022270B2
公开(公告)日:2024-06-25
申请号:US17761669
申请日:2020-05-26
Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.
Inventor: Jiale Su , Guoping Zhou , Xinwei Zhang , Changfeng Xia
CPC classification number: H04R31/003 , B81C1/00158 , H04R19/04 , B81C2201/0105 , B81C2201/0116 , B81C2201/0133 , H04R2201/003
Abstract: A preparation method for a micro-electromechanical systems (MEMS) microphone includes the steps of: providing a silicon substrate having a silicon surface; forming an enclosed cavity in the silicon substrate; forming a plurality of spaced apart acoustic holes in the silicon substrate, each acoustic hole having two openings, one of which communicating with the cavity and the other one located on the silicon surface; forming a sacrificial layer on the silicon substrate, which includes a first filling portion, a second filling portion and a shielding portion; forming a polysilicon layer on the shielding portion; forming a recess in the silicon substrate on the side away from the silicon surface; and removing the first filling portion, the second filling portion and part of the shielding portion so that the recess is brought into communication with the cavity to form a back chamber, and that the polysilicon layer, the remainder of the shielding portion and the silicon substrate together delimit a hollow chamber, the hollow chamber communicating with the opening of the plurality of acoustic holes away from the cavity, completing the MEMS microphone.
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公开(公告)号:US12006209B2
公开(公告)日:2024-06-11
申请号:US16980792
申请日:2019-03-14
Applicant: Obsidian Sensors, Inc.
Inventor: John Hong , Tallis Chang , Edward Chan , Bing Wen , Yaoling Pan , Sean Andrews
CPC classification number: B81C1/00595 , B81B3/0081 , B81C1/0069 , G01J5/20 , B81B2201/0207 , B81B2203/019 , B81C2201/0105 , B81C2201/014
Abstract: A method of manufacturing an electromechanical systems structure includes manufacturing sub-micron structural features. In some embodiments, the structural features are less than the lithographic limit of a lithography process.
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54.
公开(公告)号:US20240154599A1
公开(公告)日:2024-05-09
申请号:US18505574
申请日:2023-11-09
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Federico VERCESI , Lorenzo CORSO , Giorgio ALLEGATO , Gabriele GATTERE
CPC classification number: H03H9/1021 , B81B7/0038 , B81C1/00285 , H03H3/02 , H03H9/17 , B81B2201/0271 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2201/0105 , B81C2203/0118 , H03H2003/022 , H03H2003/027 , H03H2009/155
Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.
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公开(公告)号:US11952266B2
公开(公告)日:2024-04-09
申请号:US17066448
申请日:2020-10-08
Applicant: X-Celeprint Limited
Inventor: Pierluigi Rubino
IPC: B81C1/00
CPC classification number: B81C1/00039 , B81C1/00523 , B81C1/00555 , B81C2201/0105 , B81C2201/013
Abstract: A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.
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公开(公告)号:US11845654B2
公开(公告)日:2023-12-19
申请号:US17352149
申请日:2021-06-18
Applicant: The University of British Columbia
Inventor: Edmond Cretu , Chang Ge
IPC: B81C1/00
CPC classification number: B81C1/00476 , B81C2201/0105 , B81C2201/0133 , B81C2201/0143 , B81C2201/0181
Abstract: According to at least one embodiment, a method of fabricating a micro electro-mechanical systems (MEMS) structure is disclosed. The method involves causing an etchant to remove a portion of a sacrificial layer of the MEMS structure, the sacrificial layer between a structural layer of the MEMS structure and a substrate of the MEMS structure. In this embodiment, causing the etchant to remove the portion of the sacrificial layer involves causing a target portion of the substrate to be released from the MEMS structure. According to another embodiment, another method of fabricating a MEMS structure is disclosed. The method involves causing an etchant including water to remove a portion of a sacrificial layer of the MEMS structure, the sacrificial layer between a structural layer of the MEMS structure and a substrate of the MEMS structure. In this embodiment, the sacrificial layer and the substrate are hydrophobic.
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公开(公告)号:US20230375416A1
公开(公告)日:2023-11-23
申请号:US18228333
申请日:2023-07-31
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Tsai-Hao HUNG , Shih-Chi KUO
CPC classification number: G01K7/32 , B81C1/00944 , B81B3/0008 , B81B2203/0136 , B81C2201/0105 , B81C2201/013 , B81C2201/0116 , B81B2201/0278 , B81B2203/04
Abstract: The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrodes, and removing the modified patterned layer.
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58.
公开(公告)号:US20230357001A1
公开(公告)日:2023-11-09
申请号:US18246790
申请日:2021-09-30
Applicant: Robert Bosch GmbH
Inventor: Heribert Weber , Andreas Scheurle , Hans Artmann , Peter Schmollngruber , Thomas Friedrich , Uwe Schiller
CPC classification number: B81C1/00158 , B81B3/0021 , B81B2201/0257 , B81C2201/0105 , B81C2201/014 , B81C2203/038 , B81B2203/0307 , B81B2203/0315 , B81B2203/033 , B81B2203/0353
Abstract: A production method for a micromechanical component for a sensor device or microphone device. The method includes: forming a supporting structure composed of a first sacrificial material on a substrate surface of a substrate with a first sacrificial material layer, a plurality of etching holes structured through the first sacrificial material layer, and a plurality of supporting posts projecting into the substrate; etching into the substrate surface at least one cavity spanned by the supporting structure; forming a diaphragm composed of at least one semiconductor material on or over the first sacrificial material layer of the supporting structure; depositing a layer stack comprising at least one sacrificial layer and at least one counter electrode; and exposing the diaphragm by at least partially removing at least the supporting structure and the at least one sacrificial layer.
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公开(公告)号:US20230239641A1
公开(公告)日:2023-07-27
申请号:US18156155
申请日:2023-01-18
Applicant: SKYWORKS SOLUTIONS, INC.
Inventor: Guofeng Chen , Yu Hui
CPC classification number: H04R31/006 , B81B3/0072 , B81C1/00666 , H04R7/04 , H04R7/18 , H04R17/02 , H04R19/04 , H04R31/003 , B81B2201/0257 , B81B2203/0127 , B81B2203/0307 , B81C2201/0105 , B81C2201/0132 , B81C2203/0118 , H04R2201/003
Abstract: A method for manufacturing a microelectromechanical systems (MEMS) microphone comprises depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate, etching the substrate to define a cavity, releasing the membrane by removing at least the first sacrificial layer, and forming at least one anchor at the edge of the membrane.
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60.
公开(公告)号:US09932224B2
公开(公告)日:2018-04-03
申请号:US14973319
申请日:2015-12-17
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor: Siddharth Chakravarty , Rakesh Kumar , Pradeep Yelehanka
CPC classification number: B81C1/00293 , B81B7/0074 , B81B2203/0315 , B81C2201/0105 , B81C2201/0132 , B81C2201/0133 , B81C2203/0136
Abstract: Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes forming a sacrificial structure in and/or over a substrate. The method includes depositing a permeable layer over the sacrificial structure and the substrate. Further, the method includes etching the sacrificial structure through the permeable layer to form the cavity bounded by the substrate and the permeable layer.
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