公开(公告)号：WO2004049372A1

公开(公告)日：2004-06-10

申请号：PCT/JP2003/014980

申请日：2003-11-25

Applicant: 株式会社 東芝 ,  冨士色素株式会社 ,  伊藤 武夫 ,  松田 秀三 ,  稲村 昌晃 ,  田中 肇 ,  坂井 和夫

Inventor： 伊藤 武夫 ,  松田 秀三 ,  稲村 昌晃 ,  田中 肇 ,  坂井 和夫

IPC: H01J1/30

CPC classification number: H01J31/127 ,  B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J2201/3125

Abstract: 　この電子源装置は、絶縁体から構成され、主面に対して垂直方向に配設された多数の微細孔を有する多孔質層（例えば多孔質アルミナ層）と、この多孔質層の両面側に配設された第１および第２の導電体層とを備え、第２の導電体層を陽極として第１の導電体層との間に直流電圧を印加したときの電流密度Ｉ／Ｓが、１μＡ／ｃｍ ２ 以上であることを特徴とする。ただし、Ｓは第１の導電体層と第２の導電体層および多孔質層の重なり部分の面積を示す。電子放出能力が高く、安価で低真空度でも長寿命の電子源装置が得られるので、発光効率が高く信頼性の高い表示装置を実現することができる。

Abstract translation: 一种电子源装置，包括由绝缘体构成并具有沿垂直于主表面的方向延伸的许多微孔的多孔层（例如，多孔氧化铝层）以及设置在该主表面两侧的第一和第二导体层 多孔层的特征在于，当使用第二导体层作为阳极时，在第二导体层和第一导体层之间施加直流电压时，电流密度（I / S）为1μA/ cm 2以上 。 在这种情况下，S表示第一导体层，第二导体层和多孔层之间的重叠面积。 因此，即使在真空度低的情况下也能够以低成本获得具有高电子发射能力和长寿命的电子源装置。 可以通过使用该电子源装置来实现具有高发光效率和高可靠性的显示器。

公开(公告)号：WO1992019005A1

公开(公告)日：1992-10-29

申请号：PCT/DE1992000313

申请日：1992-04-15

Applicant: HEINRICH-HERTZ-INSTITUT FÜR NACHRICHTENTECHNIK ... ,  MÜLLER, Gerd, Otto ,  MÜLLER-MACH, Regina

Inventor： HEINRICH-HERTZ-INSTITUT FÜR NACHRICHTENTECHNIK ...

IPC: H01J29/08

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3125 ,  Y10S345/905

Abstract: A cold cathode (3) in the form of a solid thin film component is the basis for electron-optical terminal image devices. The thin-film structure consists of a base electrode (5), e.g. in the form of a bundle of parallel strips, an insulating film (6), a semiconductor film (7) and a covering electrode (8), e.g. also a bundle of parallel strips but running perpendicularly to the base electrode (5) bundle. This set of layers borne on a substrate plate (4), is in an evacuated casing (2) and is opposite a fluorescent screen (12) or a light emitter (15), the metallised coating (11) of which forms the counter-pole for the electron acceleration chamber (9). The main applications of such electron-optical terminal image devices are embodiments as matrix-addressed flat displays, image converters or write/read lines.

Abstract translation: 固体薄膜组分形式的冷阴极（3）是电子 - 光学终端图像器件的基础。 薄膜结构由基极（5）构成。 以一束平行条形式，绝缘膜（6），半导体膜（7）和覆盖电极（8） 还有一束平行条带，但垂直于基极（5）束行进。 承载在基板（4）上的这组层位于抽真空的壳体（2）中并与荧光屏（12）或发光体（15）相对，金属化的涂层（11） 用于电子加速室（9）的极。 这种电子 - 光学终端图像装置的主要应用是作为矩阵寻址平板显示器，图像转换器或写/读线的实施例。

公开(公告)号：KR100803207B1

公开(公告)日：2008-02-14

申请号：KR1020050126912

申请日：2005-12-21

Applicant: 삼성전자주식회사

Inventor： 문창욱 ,  이상목 ,  부림 ,  이승운 ,  이은홍 ,  조중래

IPC: H01J1/312 ,  C01B31/02

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3125

Abstract: 표면전자 방출소자 및 그를 구비한 디스플레이 장치에 관해 개시되어 있다. 개시된 표면전자 방출소자는 순차적으로 적층된 하부전극, 절연층 및 상부전극와, 상기 상부전극 상에 형성된 나노 구조층을 구비하는 것을 특징으로 한다.

公开(公告)号：EP1523026B1

公开(公告)日：2012-11-28

申请号：EP04255292.7

申请日：2004-09-01

Applicant: NGK Insulators, Ltd.

Inventor： Takeuchi, Yukihisa, c/o NGK Insulators, Ltd. ,  Nanataki, Tsutomu, NGK Insulators, Ltd. ,  Ohwada, Iwao, NGK Insulators, Ltd. ,  Akao, Takayoshi, NGK Insulators, Ltd.

IPC: H01J1/312

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J1/312 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/3125

公开(公告)号：EP1617449A3

公开(公告)日：2007-10-17

申请号：EP05254402.0

申请日：2005-07-14

Applicant: NGK INSULATORS, LTD.

Inventor： Nanataki, Tsutomu ,  Yamaguchi, Hirofumi ,  Kobayashi, Nobuyuki

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

Abstract: A higher performance dielectric device is provided. An electron emitter (10A) applying the dielectric device according to the present invention includes an emitter formed of a dielectric (12), and an upper electrode (14) and a lower electrode (16) to which a drive voltage is applied to cause electron emission. The emitter includes plural dielectric particles (12e), and plural dielectric particles of smaller particle size (12f) which are filled in spaces between the plural dielectric particles. The emitter having the aforesaid construction is formed by an aerosol deposition method or a sol impregnation method.

Abstract translation: 提供更高性能的电介质设备。 应用根据本发明的电介质器件的电子发射器（10A）包括由电介质（12）形成的发射器和施加驱动电压以引起电子的上电极（14）和下电极（16） 排放。 发射器包括多个电介质粒子（12e）和多个填充在多个电介质粒子之间的空间中的较小粒度（12f）的电介质粒子。 具有上述结构的发射器通过气溶胶沉积法或溶胶浸渍法形成。

公开(公告)号：EP1737011A2

公开(公告)日：2006-12-27

申请号：EP06253185.0

申请日：2006-06-20

Applicant: NGK INSULATORS, LTD.

Inventor： Yamaguchi, Hirofumi, c/o NGK Insulators, Ltd. ,  Sato, Kei, c/o NGK Insulators, Ltd.

IPC: H01J1/316

CPC classification number: H01J1/32 ,  H01J1/312 ,  H01J2201/3125

Abstract: A dielectric-film-type electron emitter includes an emitter section (12), a first electrode (14), and a second electrode (16). The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.

Abstract translation: 电介质膜型电子发射器包括发射极部分（12），第一电极（14）和第二电极（16）。 发射极部分由多晶电介质材料的薄层形成。 构成发射极部的电介质材料由具有高机械品质因数（Qm）的材料形成。 具体地说，介电材料的Qm高于所谓的低Qm材料（Qm为100以下的材料）。 介电材料的Qm优选为300以上，更优选为500以上。

公开(公告)号：EP1566823A4

公开(公告)日：2006-05-31

申请号：EP03774189

申请日：2003-11-25

Applicant: TOSHIBA CARRIER CORP ,  FUJI PIGMENT

Inventor： ITO TAKEO ,  MATSUDA HIDEMI ,  INAMURA MASAAKI ,  TANAKA HAJIME ,  SAKAI KAZUO

IPC: H01J1/312 ,  H01J29/04 ,  H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J31/127 ,  B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J2201/3125

Abstract: An electron source device comprising a porous layer (for example, a porous alumina layer), which is composed of an insulator and has many microholes extending in a direction perpendicular to the major surface, and first and second conductor layers disposed on both sides of the porous layer is characterized in that the current density (I/S) is 1 μA/cm2 or higher when a direct current voltage is applied between the second conductor layer and the first conductor layer while using the second conductor layer as an anode. In this case, S represents the overlapping area among the first conductor layer, the second conductor layer and the porous layer. Consequently, an electron source device having a high electron emission ability and a long life even when the degree of vacuum is low can be obtained at low cost. A display having a high luminous efficiency and high reliability can be realized by using this electron source device.

公开(公告)号：EP1406284A3

公开(公告)日：2006-03-29

申请号：EP03255972.6

申请日：2003-09-23

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Chen, Zhizhang ,  Ramamoorthi, Sriram ,  Liao, Hung ,  Benning, Paul ,  Govyadinov, Alexander

IPC: H01J1/312 ,  H01J9/02

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J2201/3125

Abstract: An emitter (50, 100) has an electron supply (10) and a porous cathode layer (14) having nanohole openings (22). The emitter also has a tunneling layer (20) disposed between the electron supply and the cathode layer.

公开(公告)号：EP1553616A1

公开(公告)日：2005-07-13

申请号：EP02788578.9

申请日：2002-10-18

Applicant: Hitachi, Ltd.

Inventor： SAGAWA, Masakazu, c/o Hitachi Res. Lab. Ltd. ,  KUSUNOKI, Toshiaki, c/o Hitachi Res. Lab. Ltd. ,  SUZUKI, Mutsumi, c/o Hitachi Res. Lab. Ltd.

IPC: H01J31/12 ,  H01J29/04

CPC classification number: H01J29/481 ,  B82Y10/00 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/3125

Abstract: A second interlayer insulation layer (15) is formed under an upper wiring electrode (16) serving as a power feed line to an upper electrode (13) in each thin-film type electron source array so as to prevent a failure of short-circuit. Further, an electron emission portion is limited by the second interlayer insulationlayer (15) so as to cover defects unevenly distributed in the border between an electron acceleration layer (12) and a first interlayer insulation layer (14). Thus, a failure of time dependent insulation breakdown is suppressed.

Abstract translation: 在每个薄膜型电子源阵列中的上电极（13）的用作馈电线的上布线电极（16）下面形成第二层间绝缘层（15），以防止短路 。 此外，电子发射部分被第二层间绝缘层（15）限制，以便覆盖在电子加速层（12）和第一层间绝缘层（14）之间的边界处不均匀分布的缺陷。 因此，抑制了与时间有关的绝缘击穿的失败。

公开(公告)号：US09269523B2

公开(公告)日：2016-02-23

申请号：US14599988

申请日：2015-01-19

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Peng Liu ,  De-Jie Li ,  Chun-Hai Zhang ,  Duan-Liang Zhou ,  Bing-Chu Du ,  Shou-Shan Fan

IPC: H01L29/06 ,  H01J29/18 ,  H01J1/308 ,  H01J1/304 ,  H01J1/312 ,  H01J31/12

CPC classification number: H01J29/18 ,  H01J1/304 ,  H01J1/308 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/30461 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0449 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484

Abstract: An electron emission device includes a number of first electrodes and a number of second electrodes intersected with each other to define a number of intersections. An electron emission unit is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the electron emission unit includes a semiconductor layer and an insulating layer stacked together, the semiconductor layer defines a number of holes, the carbon nanotube layer covers the number of holes, and a portion of the carbon nanotube layer is suspended on the number of holes.

Abstract translation: 电子发射装置包括多个第一电极和多个彼此相交的第二电极以限定多个交点。 电子发射单元在每个交叉点的每一个处夹在第一电极和第二电极之间，其中电子发射单元包括层叠在一起的半导体层和绝缘层，半导体层限定多个孔，碳纳米管 层覆盖孔的数量，并且一部分碳纳米管层悬浮在孔的数量上。