Abstract:
A current limiter for flat panel field emission display device is disclosed. The current limiter includes a vertical resistor and a lateral resistor which in combination provide uniform emission and blow-out protection. The current limiter consists of two layers of different resistive materials. The resistivity for the top layer is determined by the emission current density requirement and the geometric configuration of the device, including emitter base and pitch dimensions, emitter density per array and the resistive film thickness. This top layer resistor conducts vertically and helps prevent emitters with slightly lower emission thresholds from delaying the turn-on of other emitters within a pixel. Intra-pixel individual emitter resistance is substantially controlled by the vertical resistive layer, while the blow-out resistance and inter-pixel uniformity is controlled primarily by the lateral resistive layer.
Abstract:
A field emitter device includes a column conductor (22), an insulator (23), and a resistor structure (32) for advantageously limiting current in a field emitter array. A wide column conductor (22) is deposited on an insulating substrate (21). An insulator (47) is laid over the column conductor (22). A high resistance layer (32) is placed on the insulator (23) and is physically isolated from the column conductor (22). The high resistance material may be chromium oxide or 10-50 wt.% Cr+SiO. A group of microtip electron emitters (30) is placed over the high resistance layer (32) to connect in an electrical series circuit the colum conductor (22), the high resistance layer (32), and the group of electron emitters (30). One or more layers of insulator (23) and a gate electrode (24), all with cavities for the electron emitters, are laid over the high resistance material (32). One layer of insulator is selected from a group of materials including SiC, SiO, and Si3N4. An anode plate (60) is attached with intermediate space (70) between the anode plate (60) and the microtip electron emitters (30) being evacuated.
Abstract:
A method for forming resistors for regulating current in a field emission display (10) comprises integrating a high resistance resistor (32) into circuitry for the field emission display. The resistor (32) is in electrical communication with emitter sites (14) for the field emission display (10) and with other circuit components such as ground. The high resistance resistor (32) can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate (12) of the field emission display (10). Contacts (38, 39) are formed in the high resistivity material to establish electrical communication between the resistor (32) and the emitter sites (14) and between the resistor (32) and the other circuit components. The contacts (38, 39) can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).
Abstract:
A cold-cathode field emission device controls electron emission by using a current source (101) coupled to the emitter (102). The open circuit oltage of the current source (101) is less than the voltage at which the FED would emit electrons. Application of an accelerating potential (105) on the gate (103) enables electron emission. Electron emission from the FED is governed by the current source (101).
Abstract:
This invention relates to a method or forming and using a very dense layer of particles that have been encapsulated in a thermoplastic polymer binder and electrically deposited on a substrate. Space-charge-limited deposition is made possible by the addition of novel charge directors that are essentially nonconductive in aliphatic hydrocarbon liquid in the absence of binder. The particle layer can be designed to possess numerous characteristics by varying the particles to be encapsulated. Many structures can be fabricated from the different particle layers including thermal detectors, electrical interconnects, p-n junctions, micro-metallic structures, field-emitting devices, and optical coatings. A technique for the removal of semiconductor dislocations is also discussed.
Abstract:
A cold cathode field emission device that includes a ballast resistor (202, 303, 402) integrally formed therewith and coupled to the emitter (204, 302, 403) to allow appropriate compensation for manufacturing and performance variations in field emission from the attached emitter.
Abstract:
PROBLEM TO BE SOLVED: To provide an electron source capable of restraining destruction of an electron emitting element due to electric discharge. SOLUTION: The electron source is provided with a plurality of electron emitting elements, a plurality of scanning wirings and modulation wirings connecting the plurality of the electron emitting elements in a matrix shape, a scanning wiring connecting electrode to connect the electron emitting elements with the scanning wirings, a modulation wiring connecting electrode to connect the electron emitting elements with the modulation wirings, and a bypass wiring insulated with the scanning wiring and the modulation wiring and arranged in parallel with the scanning wiring or the modulation wiring. The connecting electrode positioned nearer the bypass wiring out of the scanning wiring connecting electrode and the modulation wiring connecting electrode has an excessive current prevention part for preventing a current more than a predetermined amount from flowing to the connecting electrode. COPYRIGHT: (C)2010,JPO&INPIT