CURRENT LIMITER FOR HIGH RESOLUTION FIELD EMISSION STRUCTURE
    51.
    发明申请
    CURRENT LIMITER FOR HIGH RESOLUTION FIELD EMISSION STRUCTURE 审中-公开
    高分辨率场发射结构的电流限制

    公开(公告)号:WO99004407A2

    公开(公告)日:1999-01-28

    申请号:PCT/US1998/013695

    申请日:1998-07-01

    CPC classification number: H01J1/3042 H01J2201/319

    Abstract: A current limiter for flat panel field emission display device is disclosed. The current limiter includes a vertical resistor and a lateral resistor which in combination provide uniform emission and blow-out protection. The current limiter consists of two layers of different resistive materials. The resistivity for the top layer is determined by the emission current density requirement and the geometric configuration of the device, including emitter base and pitch dimensions, emitter density per array and the resistive film thickness. This top layer resistor conducts vertically and helps prevent emitters with slightly lower emission thresholds from delaying the turn-on of other emitters within a pixel. Intra-pixel individual emitter resistance is substantially controlled by the vertical resistive layer, while the blow-out resistance and inter-pixel uniformity is controlled primarily by the lateral resistive layer.

    Abstract translation: 公开了一种用于平板场致发射显示装置的电流限制器。 电流限制器包括一个垂直电阻器和一个横向电阻器,它们组合提供均匀的发射和吹出保护。 电流限制器由两层不同的电阻材料组成。 顶层的电阻率由发射电流密度要求和器件的几何配置决定,包括发射极基极和间距尺寸,每阵列的发射极密度和电阻膜厚度。 该顶层电阻器垂直传导,并有助于防止具有稍低的发射阈值的发射器延迟像素内的其它发射器的导通。 像素内的单个发射极电阻基本上由垂直电阻层控制,而吹出电阻和像素间均匀性主要由横向电阻层控制。

    A FIELD EMITTER DEVICE WITH A CURRENT LIMITER STRUCTURE
    52.
    发明申请
    A FIELD EMITTER DEVICE WITH A CURRENT LIMITER STRUCTURE 审中-公开
    具有电流限制结构的场发射器件

    公开(公告)号:WO9831044A3

    公开(公告)日:1998-10-29

    申请号:PCT/US9800149

    申请日:1998-01-13

    Applicant: FED CORP

    CPC classification number: H01J1/3042 H01J2201/319 H01J2329/00

    Abstract: A field emitter device includes a column conductor (22), an insulator (23), and a resistor structure (32) for advantageously limiting current in a field emitter array. A wide column conductor (22) is deposited on an insulating substrate (21). An insulator (47) is laid over the column conductor (22). A high resistance layer (32) is placed on the insulator (23) and is physically isolated from the column conductor (22). The high resistance material may be chromium oxide or 10-50 wt.% Cr+SiO. A group of microtip electron emitters (30) is placed over the high resistance layer (32) to connect in an electrical series circuit the colum conductor (22), the high resistance layer (32), and the group of electron emitters (30). One or more layers of insulator (23) and a gate electrode (24), all with cavities for the electron emitters, are laid over the high resistance material (32). One layer of insulator is selected from a group of materials including SiC, SiO, and Si3N4. An anode plate (60) is attached with intermediate space (70) between the anode plate (60) and the microtip electron emitters (30) being evacuated.

    METHOD FOR FORMING HIGH RESISTANCE RESISTORS FOR LIMITING CATHODE CURRENT IN FIELD EMISSION DISPLAYS
    53.
    发明申请
    METHOD FOR FORMING HIGH RESISTANCE RESISTORS FOR LIMITING CATHODE CURRENT IN FIELD EMISSION DISPLAYS 审中-公开
    形成用于限制场发射显示屏中阴极电流的高电阻电阻的方法

    公开(公告)号:WO1997004482A1

    公开(公告)日:1997-02-06

    申请号:PCT/US1996011643

    申请日:1996-07-12

    CPC classification number: H01L28/24 H01J9/025 H01J2201/319 H01L28/20

    Abstract: A method for forming resistors for regulating current in a field emission display (10) comprises integrating a high resistance resistor (32) into circuitry for the field emission display. The resistor (32) is in electrical communication with emitter sites (14) for the field emission display (10) and with other circuit components such as ground. The high resistance resistor (32) can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate (12) of the field emission display (10). Contacts (38, 39) are formed in the high resistivity material to establish electrical communication between the resistor (32) and the emitter sites (14) and between the resistor (32) and the other circuit components. The contacts (38, 39) can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).

    Abstract translation: 一种用于形成用于调节场发射显示器(10)中的电流的电阻的方法包括将高电阻电阻(32)集成到用于场发射显示的电路中。 电阻器(32)与用于场发射显示器(10)的发射器位置(14)和与其它电路部件(例如接地)电连通。 高电阻电阻(32)可以形成为诸如本征多晶硅,掺杂有导电性降解掺杂剂的多晶硅,轻掺杂多晶硅,氮氧化钛,氮氧化钽或沉积的玻璃类材料的高电阻率材料的层 在场发射显示器(10)的基板(12)上。 在高电阻率材料中形成触点(38,39),以在电阻器(32)和发射极部分(14)之间以及电阻器(32)和其它电路部件之间建立电连通。 触点(38,39)可以形成为低电阻触点(例如欧姆接触)或高电阻触点(例如,肖特基触点)。

    ELECTROPHORETICALLY DEPOSITED PARTICLE COATINGS AND STRUCTURES MADE THEREFROM
    55.
    发明申请
    ELECTROPHORETICALLY DEPOSITED PARTICLE COATINGS AND STRUCTURES MADE THEREFROM 审中-公开
    电解沉积颗粒涂层和结构

    公开(公告)号:WO1991019023A2

    公开(公告)日:1991-12-12

    申请号:PCT/US1991003611

    申请日:1991-05-23

    IPC: C25D0

    Abstract: This invention relates to a method or forming and using a very dense layer of particles that have been encapsulated in a thermoplastic polymer binder and electrically deposited on a substrate. Space-charge-limited deposition is made possible by the addition of novel charge directors that are essentially nonconductive in aliphatic hydrocarbon liquid in the absence of binder. The particle layer can be designed to possess numerous characteristics by varying the particles to be encapsulated. Many structures can be fabricated from the different particle layers including thermal detectors, electrical interconnects, p-n junctions, micro-metallic structures, field-emitting devices, and optical coatings. A technique for the removal of semiconductor dislocations is also discussed.

    Abstract translation: 本发明涉及一种方法或形成和使用已经包封在热塑性聚合物粘合剂中并电沉积在基底上的非常致密的颗粒层。 通过添加在不存在粘合剂的情况下在脂肪族烃液体中基本上不导电的新的电荷导向器使得空间电荷限制的沉积成为可能。 颗粒层可以通过改变待包封的颗粒被设计成拥有许多特征。 可以从包括热检测器,电互连,p-n结,微金属结构,场发射器件和光学涂层的不同粒子层制造许多结构。 还讨论了去除半导体位错的技术。

    Electron source, and image display apparatus
    58.
    发明专利
    Electron source, and image display apparatus 审中-公开
    电子源和图像显示设备

    公开(公告)号:JP2010021065A

    公开(公告)日:2010-01-28

    申请号:JP2008181504

    申请日:2008-07-11

    Inventor: ONISHI TOMOYA

    Abstract: PROBLEM TO BE SOLVED: To provide an electron source capable of restraining destruction of an electron emitting element due to electric discharge. SOLUTION: The electron source is provided with a plurality of electron emitting elements, a plurality of scanning wirings and modulation wirings connecting the plurality of the electron emitting elements in a matrix shape, a scanning wiring connecting electrode to connect the electron emitting elements with the scanning wirings, a modulation wiring connecting electrode to connect the electron emitting elements with the modulation wirings, and a bypass wiring insulated with the scanning wiring and the modulation wiring and arranged in parallel with the scanning wiring or the modulation wiring. The connecting electrode positioned nearer the bypass wiring out of the scanning wiring connecting electrode and the modulation wiring connecting electrode has an excessive current prevention part for preventing a current more than a predetermined amount from flowing to the connecting electrode. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供能够抑制由于放电而导致的电子发射元件的破坏的电子源。 解决方案:电子源设置有多个电子发射元件,多个扫描配线和以矩阵形式连接多个电子发射元件的调制布线,扫描布线连接电极以连接电子发射元件 通过扫描配线,连接电子发射元件和调制布线的调制布线连接电极以及与扫描布线和调制布线绝缘并与扫描布线或调制布线并联布置的旁路布线。 位于扫描配线连接电极和调制布线连接电极之外的位于旁路布线附近的连接电极具有防止电流超过预定量的电流流过连接电极的过电流防止部。 版权所有(C)2010,JPO&INPIT

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