公开(公告)号：EP4235240A1

公开(公告)日：2023-08-30

申请号：EP22202066.1

申请日：2022-10-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pandey, Shesh Mani ,  Bian, Yusheng ,  Shank, Steven M. ,  Holt, Judson

IPC: G02B6/136

Abstract: A photonics structure comprising an optical component; a substrate including a cavity and a first dielectric material in the cavity; and a first dielectric layer positioned in a vertical direction between the optical component and the cavity, wherein the optical component is positioned in a lateral direction to overlap with the cavity in the substrate.

公开(公告)号：EP4195292A1

公开(公告)日：2023-06-14

申请号：EP22201488.8

申请日：2022-10-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pandey, Shesh Mani

IPC: H01L29/735 ,  H01L29/73 ,  H01L29/10 ,  H01L21/331

Abstract: A bipolar transistor structure comprising a first emitter/collector material above an insulator with the first emitter/collector material having a first sidewall and a second sidewall over the insulator, a first base on or above the insulator adjacent the first sidewall of the first emitter/collector material, a second base above the insulator adjacent the second sidewall of the first emitter/collector material and a second emitter/collector material above the insulator and adjacent the first base. Wherein, a width of the first base between the first emitter/collector material and the second emitter/collector material is less than a width of the first emitter/collector material, and the first base protrudes horizontally outward from an end of the first emitter/collector material and an end of the second emitter/collector material.

公开(公告)号：EP4195278A1

公开(公告)日：2023-06-14

申请号：EP22203178.3

申请日：2022-10-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shank, Steven M. ,  Ngu, Yves T. ,  Zierak, Michael J. ,  Adusumilli, Siva P.

IPC: H01L27/12 ,  H01L21/84 ,  H01L27/13 ,  H03K17/687 ,  H01L29/786

Abstract: A structure, comprising: a field effect transistor stack including a plurality of transistors over a buried insulator layer; a polysilicon isolation region in a substrate below the field effect transistor stack and the buried insulator layer; and a resistor network in the polysilicon isolation region, the resistor network having a different resistivity than the polysilicon isolation region.

公开(公告)号：EP4557376A1

公开(公告)日：2025-05-21

申请号：EP24181005.0

申请日：2024-06-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： HOLT, Judson R. ,  KENNEY, Crystal R. ,  JAIN, Vibhor ,  PEKARIK, John J. ,  NAFARI, Mona ,  JOHNSON, Jeffrey B.

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertical heterojunction bipolar transistors and methods of manufacture. The structure includes: a sub-collector region; a collector region above the sub-collector region; an intrinsic base above the collector region; an emitter above the intrinsic base region; and an extrinsic base on the intrinsic base and adjacent to the emitter, wherein the collector region includes an undercut profile comprising lower inwardly tapered sidewalls and upper inwardly tapered sidewalls which extend to a narrow section between the sub-collector region and the base region.

公开(公告)号：EP4553902A1

公开(公告)日：2025-05-14

申请号：EP24172309.7

申请日：2024-04-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： NATH, Anindya ,  RAGHUNATHAN, Uppili S. ,  KRISHNASAMY, Rajendran ,  KARALKAR, Sagar Premnath ,  DERRICKSON, Alexander M. ,  JAIN, Vibhor

IPC: H01L27/02 ,  H01L29/66 ,  H01L29/74

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a silicon control rectifier (SCR) and methods of manufacture. The structure includes: a doped region in a semiconductor substrate; at least two regions of semiconductor material comprising opposite doping types over the doped region; and polysilicon regions over respective ones of the least two regions of semiconductor material.

公开(公告)号：EP4539125A1

公开(公告)日：2025-04-16

申请号：EP24166603.1

申请日：2024-03-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： CUCCI, Brett T. ,  DEANGELIS, Jacob M. ,  PORTER, Spencer H. ,  WILLS, Trevor S. ,  LEVY, Mark D.

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a semiconductor substrate; a gate structure on the semiconductor substrate; a gate metal connecting to the gate structure; and a field plate connected to a source region of the gate structure. The gate metal and the field plate include a same material.

公开(公告)号：EP4535661A1

公开(公告)日：2025-04-09

申请号：EP23210063.6

申请日：2023-11-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： Bellaouar, Abdellatif ,  Syed, Shafiullah

IPC: H03F1/32 ,  H03F3/195 ,  H03F3/21 ,  H03F3/45

Abstract: A differential power amplifier circuit (100), including: a first differential power amplifier (102) including first and second cross-coupled neutralization capacitors; and a second differential power amplifier (104), coupled in parallel with the first differential power amplifier (102), including a plurality of multi-gate transistors (106).

公开(公告)号：EP4525048A1

公开(公告)日：2025-03-19

申请号：EP24160165.7

申请日：2024-02-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： DERRICKSON, Alexander M. ,  SHANBHAG, Kaustubh ,  JAIN, Vibhor ,  HOLT, Judson R.

IPC: H01L29/10 ,  H01L21/331 ,  H01L29/737 ,  H01L29/08 ,  H01L29/73 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a collector; a base region above the collector; an emitter laterally connecting to the base region; and an extrinsic base connecting to the base region.

公开(公告)号：EP4506987A1

公开(公告)日：2025-02-12

申请号：EP24153568.1

申请日：2024-01-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： CUCCI, Brett ,  HAZBUN, Ramsey ,  RASSEL, Richard ,  HE, Zhong-Xiang ,  MITCHELL, Patrick

IPC: H01L21/76 ,  H01L29/778 ,  H01L29/78 ,  H01L21/762 ,  H01L21/763

Abstract: Structures including a compound semiconductor layer stack and methods of forming such structures. The structure comprises a device region on a substrate. The device region includes a first section of a layer stack that has a plurality of semiconductor layers, and each semiconductor layer comprises a compound semiconductor material. The structure further comprises an isolation structure disposed about the section of the layer stack, and a device in the device region. The isolation structure penetrates through the layer stack to the substrate.

公开(公告)号：EP4498136A2

公开(公告)日：2025-01-29

申请号：EP24152745.6

申请日：2024-01-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： BIAN, Yusheng ,  GIEWONT, Kenneth ,  HIROKAWA, Takako

IPC: G02B6/12 ,  G02B6/122

Abstract: Structures for a photonics chip that include a photonic component and methods of forming such structures. The structure may comprise a photodetector on a substrate and a waveguide core. The photodetector includes a light-absorbing layer having a longitudinal axis, a first sidewall, and a second sidewall adjoined to the first sidewall at an interior angle. The first sidewall is slanted relative to the longitudinal axis, and the second sidewall is oriented transverse to the longitudinal axis. The waveguide core includes a tapered section adjacent to the first sidewall and the second sidewall of the light-absorbing layer.