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公开(公告)号：KR1020140109579A
公开(公告)日：2014-09-16
申请号：KR1020130023657
申请日：2013-03-06
Applicant: 삼성전자주식회사
CPC classification number: H04N5/378 , G01C15/06 , G01S7/4914 , G01S7/493 , G01S17/89 , H01L27/14603 , H01L27/14609
Abstract: An image sensor includes: a depth sensor for generating a charge which is photoelectrically converted by the photo of a modulation reflection light which is reflected from a subject; a first floating diffusion node which receives the charge generated from the depth sensor: a second floating diffusion node which outputs the charge of a reflection light element without ambient light; and an ambient light removing circuit which is arranged between the first floating diffusion node and the second floating diffusion node and forms the barrier level of the charge transmitted from the first floating diffusion node to the second floating diffusion node in response to the ambient light. Therefore, a depth error property is improved by removing the influence of the ambient light.
Abstract translation: 图像传感器包括：深度传感器，用于产生由被摄体反射的调制反射光的照片进行光电转换的电荷; 第一浮动扩散节点，其接收从深度传感器产生的电荷：第二浮动扩散节点，其输出反射光元件的电荷而没有环境光; 以及环境光去除电路，其布置在第一浮动扩散节点和第二浮动扩散节点之间，并响应于环境光形成从第一浮动扩散节点传输到第二浮动扩散节点的电荷的势垒级。 因此，通过消除环境光的影响来提高深度误差特性。
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公开(公告)号：KR1020140084817A
公开(公告)日：2014-07-07
申请号：KR1020120154733
申请日：2012-12-27
Applicant: 삼성전자주식회사
CPC classification number: H04N5/3745 , G01S7/4914 , G01S17/89
Abstract: A depth pixel of a three-dimensional image sensor comprises a light detection unit, an ambient light removing current source, a driving transistor, and a selection transistor. The light detection unit generates a light current based on received light reflected from a subject. The ambient light removing current source generates a compensation current for removing an ambient light component included in the received light in response to a power supply voltage and at least one compensation control signal. The driving transistor amplifies an effective voltage corresponding to the sum of the light current and the compensation current. The selection transistor outputs the amplified effective voltage as depth information in response to a selection signal.
Abstract translation: 三维图像传感器的深度像素包括光检测单元，环境光去除电流源，驱动晶体管和选择晶体管。 光检测单元基于从被摄体反射的接收光产生光电流。 环境光去除电流源响应于电源电压和至少一个补偿控制信号产生用于去除接收的光中包括的环境光分量的补偿电流。 驱动晶体管放大对应于光电流和补偿电流之和的有效电压。 选择晶体管响应于选择信号输出放大的有效电压作为深度信息。
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公开(公告)号：KR1020140075412A
公开(公告)日：2014-06-19
申请号：KR1020120143715
申请日：2012-12-11
Applicant: 삼성전자주식회사
IPC: H01L31/10
CPC classification number: H01L27/14625 , H01L27/14601 , H01L27/14605 , H01L27/14614 , H01L27/14627 , H01L31/02327 , H01L31/09 , H04N5/332 , H04N5/3745
Abstract: The present invention provides a photodetector and an image sensor including the same. The photodetector has a structure which includes conductive patterns and a middle layer interposed between the conductive patterns. A beam is focused on the middle layer by properly adjusting the length of the conductive pattern and the wavelength of the beam to generate joule heat. Therefore, the beam can be detected by changing the electrical resistance of the middle layer.
Abstract translation: 本发明提供一种光检测器和包括该光电检测器的图像传感器。 光检测器具有包括导电图案和介于导电图案之间的中间层的结构。 通过适当调整导电图案的长度和波长的波长来产生焦耳热，将光束聚焦在中间层上。 因此，可以通过改变中间层的电阻来检测光束。
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公开(公告)号：KR1020140069932A
公开(公告)日：2014-06-10
申请号：KR1020120137825
申请日：2012-11-30
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H01L27/14
CPC classification number: H04N5/378 , H01L2924/0002 , H04N5/374 , H04N5/3745 , H01L2924/00
Abstract: A method of operating an image sensor comprises the steps of: thermoelectric-cooling a pixel by using a thermoelectric element having a thermoelectric bonding which is integrated in the pixel; and performing a photoelectric conversion operation by using the thermoelectric device. The thermoelectric-cooling step is a step of peltier-cooling the pixel by using a peltier device having a peltier bonding.
Abstract translation: 操作图像传感器的方法包括以下步骤：通过使用集成在像素中的具有热电接合的热电元件对像素进行热电冷却; 以及通过使用该热电装置进行光电转换操作。 热电冷却步骤是通过使用具有珀耳帖结合的珀耳帖装置来使像素冷却的步骤。
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公开(公告)号：KR1020140047512A
公开(公告)日：2014-04-22
申请号：KR1020130073997
申请日：2013-06-26
Applicant: 삼성전자주식회사
CPC classification number: H04N5/363 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/378
Abstract: A binary CMOS image sensor according to an embodiment of the present invention comprises: a pixel array including a pixel having a plurality of sub-pixels; and a readout circuit which readouts a pixel signal outputted from the pixel, wherein the readout circuit quantizes the pixel signal corresponding to the sub-pixel signals outputted from the sub-pixels activated in response to incident light among the sub-pixels by using a reference signal. A resistance value of each of the plurality of sub-pixels is determined based on a number of photons generated in response to the incident light.
Abstract translation: 根据本发明实施例的二进制CMOS图像传感器包括：包括具有多个子像素的像素的像素阵列; 以及读出电路，其读出从像素输出的像素信号，其中读出电路通过使用参考来量化与从子像素中的入射光激活的子像素输出的子像素信号相对应的像素信号 信号。 基于响应于入射光而产生的光子的数量来确定多个子像素中的每一个的电阻值。
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Patent Agency Ranking
公开(公告)号：KR101357304B1
公开(公告)日：2014-01-28
申请号：KR1020070092149
申请日：2007-09-11
Applicant: 삼성전자주식회사
IPC: H01L27/108
CPC classification number: H01L27/108 , H01L27/10802 , H01L29/7841
Abstract: 커패시터리스 디램 및 그의 제조방법 및 동작방법이 개시되어 있다. 개시된 커패시터리스 디램은, 기판 상면과 이격 배치된 것으로서 소오스영역과 드레인영역 및 채널영역을 포함하는 반도체층, 상기 채널영역 상에 구비된 전하저장층, 및 상기 기판 상에 상기 채널영역 및 상기 전하저장층과 접하도록 형성된 게이트를 포함하고, 상기 게이트는 상기 채널영역의 마주하는 양측면과, 상기 전하저장층의 마주하는 양측면 및 상면을 덮는 것는 것을 특징으로 한다.
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公开(公告)号：KR101320519B1
公开(公告)日：2013-10-23
申请号：KR1020060070881
申请日：2006-07-27
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247 , B82Y10/00
CPC classification number: G11C16/0433 , G11C16/0491 , G11C16/10 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11568
Abstract: 낸드 타입의 플래시 메모리 소자 및 노어 타입의 플래시 메모리 소자의 단점을 동시에 극복할 수 있는 비휘발성 메모리 소자가 제공된다. 비휘발성 메모리 소자는 하나의 스트링에 교차 연결된 제 1 및 제 2 비트 라인들을 포함한다. 제 1 및 제 2 메모리 트랜지스터들은 제 1 및 제 2 비트 라인들 사이의 스트링 부분에 포함되고, 제어 게이트 및 스토리지 노드를 각각 포함한다. 제 1 패스 트랜지스터는 제 1 비트 라인 및 제 1 메모리 트랜지스터 사이의 스트링 부분에 포함되고, 제 1 패스 게이트를 포함한다. 제 2 패스 트랜지스터는 제 2 메모리 트랜지스터 및 제 2 비트 라인 사이의 스트링 부분에 포함되고, 제 2 패스 게이트를 포함한다. 제 3 패스 트랜지스터는 제 1 및 제 2 메모리 트랜지스터들 사이의 스트링 부분에 포함되고, 제 3 패스 게이트를 포함한다. 제 3 비트 라인은 제 3 패스 트랜지스터의 채널에 연결된다. 그리고, 워드 라인은 제 1 및 제 2 메모리 트랜지스터들의 제어 게이트에 공통으로 연결된다.
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公开(公告)号：KR101274205B1
公开(公告)日：2013-06-14
申请号：KR1020070070771
申请日：2007-07-13
Applicant: 삼성전자주식회사
CPC classification number: G11C16/34
Abstract: 프로그램동작의신뢰성을높이고빠른동작속도를갖는비휘발성메모리소자의동작방법이제공된다. 비휘발성메모리소자는반도체기판상의공통소오스라인및 복수의비트라인들사이에낸드구조로배치된복수의메모리셀들을포함한다. 상기복수의메모리셀들가운데선택된메모리셀에데이터를기록한다. 상기복수의메모리셀들가운데상기선택된메모리셀에인접하게연결된하나이상의메모리셀의채널을통하여상기선택된메모리셀의채널에부스팅전압을유도하여상기기록된데이터를안정화시킨다. 그리고, 상기데이터를검증한다.
Abstract translation: 提供了非易失性存储器件的操作方法。 在操作包括多个存储单元的非易失性存储器件的方法中，通过在其中记录有记录数据的存储单元的通道上感应升压电压来稳定记录数据。 从多个存储单元中选择存储单元，并且所选存储单元的通道上的升压电压由连接到所选存储单元的至少一个存储单元的通道电压引起。
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公开(公告)号：KR1020130054508A
公开(公告)日：2013-05-27
申请号：KR1020110119903
申请日：2011-11-17
Applicant: 삼성전자주식회사
CPC classification number: G01J1/44 , G01J1/0228 , G01J1/18 , G01S7/4914 , G01S17/89 , H04N5/3696
Abstract: PURPOSE: A pixel circuit and a depth sensor including the same are provided to effectively eliminate external light by operating a first or a second operation mode based on the strength of the external light. CONSTITUTION: A light reception unit(110) generates electric charges in response to incident light. A signal generating unit(120) accumulates a floating diffusion node during a searching section based on a transmission control signal, a reset control signal, and a selection control signal and outputs an analog signal of a size corresponding to the electric charge of the floating diffusion node. A refresh transistor(130) discharges the electric charges generated based on a refresh control signal as power.
Abstract translation: 目的：提供像素电路和包括该像素电路的深度传感器，以通过基于外部光的强度操作第一或第二操作模式来有效地消除外部光。 构成：光接收单元（110）根据入射光产生电荷。 信号发生单元（120）根据传输控制信号，复位控制信号和选择控制信号在搜索部分期间累积浮动扩散节点，并输出与浮动扩散电荷相对应的尺寸的模拟信号 节点。 刷新晶体管（130）将基于刷新控制信号生成的电荷放电为功率。
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公开(公告)号：KR1020130053601A
公开(公告)日：2013-05-24
申请号：KR1020110118989
申请日：2011-11-15
Applicant: 삼성전자주식회사
IPC: H04N5/369 , H04N5/3745 , H04N13/02
CPC classification number: H01L27/14609 , H04N13/207 , H04N13/271 , H04N5/369 , H04N5/3745
Abstract: PURPOSE: A pixel of a depth sensor and an image sensor including the pixel are provided to reduce spatial waste according to the miniaturization of the pixel by sharing a first floating diffusion node with first and second light amount extracting circuits. CONSTITUTION: A first light amount extracting circuit(210) generates a first charge changed according to the amount of light reflected from a target and transmits the first charge to a light amount output circuit(230). A second light amount extracting circuit(220) generates a second charge changed according to the amount of the light reflected from the target and transmits the second charge to the light amount output circuit. The light amount output circuit receives the first and the second charges from the extracting circuits to output a pixel signal according to a control signal.
Abstract translation: 目的：提供深度传感器的像素和包括像素的图像传感器，以通过与第一和第二光量提取电路共享第一浮动扩散节点，根据像素的小型化来减少空间浪费。 构成：第一光量提取电路（210）产生根据从目标反射的光量而改变的第一电荷，并将第一电荷发送到光量输出电路（230）。 第二光量提取电路（220）产生根据从目标反射的光量而改变的第二电荷，并将第二电荷发送到光量输出电路。 光量输出电路从提取电路接收第一和第二电荷，以根据控制信号输出像素信号。
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