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公开(公告)号：KR1020040050564A
公开(公告)日：2004-06-16
申请号：KR1020020078420
申请日：2002-12-10
Applicant: 제일모직주식회사
IPC: C09K3/14
CPC classification number: C09G1/02 , C01P2006/12 , C09K3/1409 , C09K3/1463 , H01L21/3212
Abstract: PURPOSE: A CMP (chemical mechanical polishing) slurry composition for polishing a metal wire layer is provided, to improve a polishing velocity and a polishing velocity selection ratio, thereby preventing the deterioration of polishing velocity due to a long-term storage. CONSTITUTION: The CMP slurry composition comprises a polishing agent which is dispersed in deionized water and is a fused silica or zirconia fine powder with a specific surface area of primary particle of 90-300 m2/g; a first oxidizing agent; a second oxidizing agent; a metal-chelate complex; and a pH controller. Preferably the first oxidizing agent is selected from the group consisting of hydrogen peroxide, benzoyl peroxide, calcium peroxide, barium peroxide and sodium peroxide; the second oxidizing agent is nitric acid or sulfuric acid; and the metal-chelate complex is PDTA-Fe, PDTA-Mn or EDTA-Fe. Preferably the composition has a pH of 1.5-3.0 if a metal wire layer is made of tungsten, and a pH of 4-10 if aluminium.
Abstract translation: 目的：提供用于抛光金属丝层的CMP（化学机械抛光）浆料组合物，以提高抛光速度和抛光速度选择比，从而防止由于长期储存引起的抛光速度的劣化。 构成：CMP浆料组合物包含分散在去离子水中的抛光剂，是一次粒子的比表面积为90-300m 2 / g的熔融二氧化硅或氧化锆细粉; 第一氧化剂; 第二氧化剂; 金属螯合物; 和pH控制器。 优选地，第一氧化剂选自过氧化氢，过氧化苯甲酰，过氧化钙，过氧化钡和过氧化钠; 第二氧化剂是硝酸或硫酸; 金属螯合物是PDTA-Fe，PDTA-Mn或EDTA-Fe。 如果金属丝层由钨制成，则组合物的pH值为1.5-3.0，如果是铝，则其pH为4-10。
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公开(公告)号：KR1020020054528A
公开(公告)日：2002-07-08
申请号：KR1020000083649
申请日：2000-12-28
Applicant: 제일모직주식회사
IPC: G03F7/039
CPC classification number: G03F7/039 , G03F7/0045 , G03F7/027 , G03F7/0392 , G03F7/0397 , G03F7/0758
Abstract: PURPOSE: Provided is a photoresist composition which can be processed at relatively low temperature by using a high molecular weight compound incorporating crosslinkage without necessity of a separate crosslinking agent. CONSTITUTION: The photoresist composition comprises (1) 100 parts by weight of high molecular weight compounds having molecular weight of 7000-50000 of formula 1, which is obtained by incorporating a bisphenol-A diethanol divinyl ether or 1,4-cyclohexane dimethanol divinyl ether, as crosslinking agent, between molecules of hydroxystyrene/styrene/t-butylacrylate copolymer or hydroxystyrene/t-butylmethacrylate copolymer to crosslink the molecules; (2) 0.1-20 parts by weight of photosensitizer of formula 5; (3) 0.01-10 parts by weight of organic base; and (4) 500-1000 parts by weight of organic solvent. In the formulae, R1 represents hydrogen atom or methyl group, R2 represents t-butyl group or methyl group, R3 is methyl group, X is the formula (a) or (b), each of m and n is an integer satisfying formulae 0.05
Abstract translation: 目的：提供一种光致抗蚀剂组合物，它可以在不需要单独的交联剂的情况下通过使用并入交联剂的高分子量化合物在相对较低的温度下进行处理。 构成：光致抗蚀剂组合物包括（1）100重量份分子量为7000-50000的式1的高分子量化合物，其通过掺入双酚A二乙醇二乙烯基醚或1,4-环己烷二甲醇二乙烯基醚 作为交联剂，在羟基苯乙烯/苯乙烯/丙烯酸叔丁酯共聚物或羟基苯乙烯/甲基丙烯酸叔丁酯共聚物的分子之间交联分子; （2）0.1-20重量份式5的光敏剂; （3）0.01-10重量份有机碱; 和（4）500-1000重量份的有机溶剂。 式中，R1表示氢原子或甲基，R2表示叔丁基或甲基，R3表示甲基，X表示式（a）或（b），m和n均为满足式0.05的整数 <= n / m <= 0.5，Q-表示非铪或10-樟脑磺酸盐，Me是甲基。
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公开(公告)号：KR1020020054527A
公开(公告)日：2002-07-08
申请号：KR1020000083648
申请日：2000-12-28
Applicant: 제일모직주식회사
IPC: G03F7/039
CPC classification number: G03F7/039 , G03F7/0045 , G03F7/027 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0758
Abstract: PURPOSE: Provided is a photoresist composition which can be processed at relatively low temperature by using a high molecular weight compound incorporating crosslinkage without necessity of a separate crosslinking agent. CONSTITUTION: The photoresist composition comprises (1) 100 parts by weight of high molecular weight compounds having molecular weight of 7000-50000 of formula 1, which is obtained by incorporating a bisphenol-A diethanoldivinyl ether or 1,4-cyclohexane dimethanol divinyl ether, as crosslinking agent, between molecules of hydroxystyrene/styrene/t-butylacrylate copolymer or hydroxystyrene/styrene/ t-butylmethacrylate copolymer to crosslink the molecules; (2) 0.1-20 parts by weight of photosensitizer of formula 5; (3) 0.01-10 parts by weight of organic base; and (4) 500-1000 parts by weight of organic solvent. In the formulae, R1 represents hydrogen atom or methyl group, R2 represents t-butyl group or methyl group, R3 is methyl group, X is the formula a or b, each of l, m, and n is an integer satisfying formulae 0.05
Abstract translation: 目的：提供一种光致抗蚀剂组合物，它可以在不需要单独的交联剂的情况下通过使用并入交联剂的高分子量化合物在相对较低的温度下进行处理。 构成：光致抗蚀剂组合物包含（1）100重量份分子量为7000-50000的式1的高分子量化合物，其通过掺入双酚A二乙醇二乙烯基醚或1,4-环己烷二甲醇二乙烯基醚而获得， 作为交联剂，在羟基苯乙烯/苯乙烯/丙烯酸叔丁酯共聚物或羟基苯乙烯/苯乙烯/甲基丙烯酸叔丁酯共聚物的分子之间交联分子; （2）0.1-20重量份式5的光敏剂; （3）0.01-10重量份有机碱; 和（4）500-1000重量份的有机溶剂。 式中，R 1表示氢原子或甲基，R 2表示叔丁基或甲基，R 3表示甲基，X表示式a或b，l，m，n分别为满足式0.05 < = m / l <=0.5,0.05≤n/l≤0.5，Q-表示非海参或10-樟脑磺酸盐，Me是甲基。
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公开(公告)号：KR101659144B1
公开(公告)日：2016-09-23
申请号：KR1020140045953
申请日：2014-04-17
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1454 , C09K3/1463 , C09K3/1472 , C09K13/06 , H01L21/30625 , H01L21/31058 , H01L21/3212
Abstract: 본발명은극성용매, 비극성용매중 하나이상; 및금속산화물연마제를포함하고, 산성이고, 탄소함량이 50 내지 95atom%인유기막을연마하기위한유기막 CMP 슬러리조성물및 이를이용한연마방법에관한것이다.
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公开(公告)号：KR2020150003441U
公开(公告)日：2015-09-16
申请号：KR2020140001861
申请日：2014-03-07
Applicant: 제일모직주식회사
IPC: H01L21/304
CPC classification number: H01L21/67046 , B24B37/04
Abstract: 본고안은화학적기계적연마(CMP) 후웨이퍼를세정하기위한롤-브러쉬(roll-brush)가구비되고, 상기웨이퍼의공급방향은상기롤-브러쉬의길이방향과수직이며, 상기롤-브러쉬는원통형하우징및 상기하우징외주면에형성된나일론계극미세모를포함하는세정시스템에관한것이다. 상기세정시스템은웨이퍼표면에스크래치를최소화할수 있으며, 세정시오염입자가흡착되지않는세정브러쉬가구비되어공정효율성이우수하다.
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Patent Agency Ranking
公开(公告)号：KR101422663B1
公开(公告)日：2014-07-24
申请号：KR1020110136746
申请日：2011-12-16
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
Abstract: 본 발명은 산화막 연마용 CMP 슬러리 조성물, 이의 제조 방법 및 이를 이용한 연마 방법에 관한 것이다. 보다 구체적으로, 본 발명은 패드 절삭률이 2% ~ 6%인 산화막 연마용 CMP 슬러리 조성물 및 이를 이용한 연마 방법에 관한 것이다. 본 발명은 다이아몬드 디스크 마모율을 낮춤과 동시에 연마 성능이 높은 CMP 슬러리 조성물, 이의 제조 방법 및 이를 이용한 연마 방법을 제공하였다.
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公开(公告)号：KR101411019B1
公开(公告)日：2014-06-24
申请号：KR1020110146562
申请日：2011-12-29
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
CPC classification number: C09K3/1409 , C09G1/02 , H01L21/31053
Abstract: 본 발명은 CMP 슬러리 조성물 및 이를 이용한 연마 방법에 관한 것으로서, 본 발명의 CMP 슬러리 조성물은 양의 제타 전위를 갖는 금속산화물 입자; 양쪽 이온성 화합물; 양이온성 계면활성제; 및 초순수를 포함한다.
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公开(公告)号：KR1020130078792A
公开(公告)日：2013-07-10
申请号：KR1020110147916
申请日：2011-12-30
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
Abstract: PURPOSE: A CMP slurry composition is provided to maintain 200 Å/min or more polishing rate to an oxide film and to have a polishing selectivity which is a ratio of a polishing rate to an oxide film and a polishing rate to a nitride film is 50 or more. CONSTITUTION: A CMP slurry composition uses a monocarboxylic acid as a dispersant and a ceria particle which has a positive surface potential by modifying the surface with a hydrogen phthalate compound; a pH controller; and ultra-pure water. The monocarboxylic acid is an acetic acid or propionic acid. The amount of the monocarboxylic acid used is 0.001-1 wt%. The hydrogen phthalate compound is a potassium hydrogen phthalate. The amount of the hydrogen phthalate compound used is 0.001-1 wt%. The surface potential of the ceria particle is 10-50 mV.
Abstract translation: 目的：提供CMP浆料组合物以保持200 / min或更高的抛光速率至氧化膜，并且具有抛光选择性，其为抛光速率与氧化膜的比率和对氮化物膜的研磨速率为50 或者更多。 构成：CMP浆料组合物使用单羧酸作为分散剂和通过用邻苯二甲酸氢盐化合物改性表面具有正表面电位的二氧化铈颗粒; pH控制器 和超纯水。 单羧酸是乙酸或丙酸。 一元羧酸的使用量为0.001-1重量％。 邻苯二甲酸氢盐化合物是邻苯二甲酸氢钾。 邻苯二甲酸氢醌化合物的使用量为0.001-1重量％。 二氧化铈颗粒的表面电位为10-50mV。
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公开(公告)号：KR101279969B1
公开(公告)日：2013-07-05
申请号：KR1020080138695
申请日：2008-12-31
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: 본 발명은 연마제와 산화제를 포함하는 금속 배선 연마용 CMP 슬러리 조성물에 관한 것으로, 보다 상세하게는 금속막과 절연막간의 선택적인 연마특성을 조절하기 위한 슬러리 조성 및 사용방법에 관한 것이다. 본 발명에 의하여 배선층으로 사용되는 금속막과 절연막간의 선택적 연마특성을 조절함으로써 다양한 종류의 디바이스에 적용할 수 있는 슬러리의 제조가 가능하다.
금속, CMP, 슬러리, 선택적 연마특성Abstract translation: 本发明涉及用于研磨包含研磨剂和氧化剂的金属布线的CMP浆料组合物，更具体地涉及用于控制金属膜和绝缘膜之间的选择性抛光特性的浆料组合物和方法。 本发明可用于通过控制用作布线层的金属膜和绝缘膜之间的选择性抛光特性来制造可应用于各种装置的浆料。
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