公开(公告)号：DE102005048447A1

公开(公告)日：2007-04-19

申请号：DE102005048447

申请日：2005-10-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/06 ,  H01L21/336 ,  H01L29/78

Abstract: The component (1) has a semiconductor body (3) with a vertically endowed drift distance (4) between an electrode (5) on a top side of the component and another electrode (8) on a rear side of the component. The drift distance has vertically aligned drift zones (11) that are surrounded by vertically aligned charge compensation regions (12). The regions have vertically stacked pn-junctions (13) with heavily doped p and n regions, where the sum of breakdown voltages of the stacked pn-junctions is smaller than a breakdown voltage of the drift zones. An independent claim is also included for a method of manufacturing a semiconductor power component with a charge compensation structure.

公开(公告)号：DE10248205B4

公开(公告)日：2007-03-08

申请号：DE10248205

申请日：2002-10-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L21/28 ,  H01L23/485 ,  H01L29/24 ,  H01L29/26 ,  H01L29/417 ,  H01L29/45 ,  H01L29/739 ,  H01L29/78

公开(公告)号：DE10239312B4

公开(公告)日：2006-08-17

申请号：DE10239312

申请日：2002-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL ,  STRACK HELMUT

IPC: H01L21/331 ,  H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L29/08 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

公开(公告)号：DE102004044619A1

公开(公告)日：2006-03-30

申请号：DE102004044619

申请日：2004-09-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L27/08 ,  H01L21/822 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

Abstract: A capacitor structure in trench structures of a semiconductor device includes conductive regions made of metallic and/or semiconducting materials. The conducting regions are surrounded by a dielectric and form stacked layers in the trench structure of the semiconductor device.

公开(公告)号：DE19732439B4

公开(公告)日：2006-01-19

申请号：DE19732439

申请日：1997-07-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  STRACK HELMUT

IPC: H01L23/36 ,  H01L23/373

公开(公告)号：DE10361134A1

公开(公告)日：2005-07-28

申请号：DE10361134

申请日：2003-12-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  STRACK HELMUT

IPC: H01L21/329 ,  H01L21/331 ,  H01L21/332 ,  H01L21/336 ,  H01L27/08 ,  H01L29/06 ,  H01L29/32 ,  H01L21/265 ,  H01L29/70 ,  H01L29/76 ,  H01L21/328

Abstract: A process for producing deep p-regions in silicon comprises irradiating n-substrate or n-epitaxial sections of the semiconductor element being made with high-energy particles of such energy that, after a given time and heating temperature the n-region is converted to a p-region to the required depth.

公开(公告)号：DE10349582A1

公开(公告)日：2005-06-02

申请号：DE10349582

申请日：2003-10-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON DR-ING ,  HILLE FRANK ,  VYTLA RAJEEV KRISHNA ,  FALCK ELMAR ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  STRACK HELMUT

IPC: H01L21/329 ,  H01L29/32 ,  H01L29/861

公开(公告)号：DE19740904B4

公开(公告)日：2004-10-28

申请号：DE19740904

申请日：1997-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STRACK HELMUT ,  STENGL PETER

IPC: C30B33/00 ,  H01L21/322 ,  C30B33/08 ,  C30B33/02 ,  C30B28/12

Abstract: Residual oxygen impurities are eliminated from silicon wafers pulled from a crucible (Czochralski silicon). A multitude of trenches are etched into the back side of the crucible-pulled silicon wafer and the wafer is subsequently heat-treated at about 1100° C. The very large surface area at the front side of the silicon wafer allows oxygen impurities to diffuse out effectively. After the diffusion has been carried out, the trenches are filled with heavily doped polysilicon without leaving gaps.

公开(公告)号：DE59711481D1

公开(公告)日：2004-05-06

申请号：DE59711481

申请日：1997-01-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  STRACK HELMUT ,  GEIGER HEINRICH

IPC: H01L21/205 ,  H01L21/225 ,  H01L21/331 ,  H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78

Abstract: The device has a drain zone (1,2) of a first conductivity type and a relatively insulated polycrystalline silicon gate electrode (6), with at least one zone of opposite type incorporated in the drain zone within which a source zone of the first conductivity type is formed. The drain zone incorporates a doped region (15) of the first conductivity type, incorporating a number of zones (16) of the opposite type, with the overall doping of the zones corresponding to the doping of the doped region.The relative spacing of the doped zones is less than the width of the spatial charge zone between the region of first conductivity type and the doped zones.

公开(公告)号：AT263433T

公开(公告)日：2004-04-15

申请号：AT99944236

申请日：1999-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PORST ALFRED ,  STRACK HELMUT ,  MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  BRUNNER HEINRICH ,  BAUER JOSEF ,  BARTHELMESS REINER

IPC: H01L29/744 ,  H01L29/10 ,  H01L29/12 ,  H01L29/36 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/861

Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.