公开(公告)号：DE102013104953A1

公开(公告)日：2014-12-04

申请号：DE102013104953

申请日：2013-05-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BRÖLL MARKUS ,  KLEMP CHRISTOPH ,  SCHMID WOLFGANG

IPC: H01L33/36 ,  H01L21/283

Abstract: Ein Verfahren zum Herstellen eines optoelektronischen Bauelements umfasst Schritte zum Bereitstellen eines Halbleiterkristalls, der eine Oberfläche aufweist, zum Aufbringen einer ersten Schicht, die ein Dielektrikum aufweist, auf die Oberfläche, zum Aufbringen und Strukturieren einer Fotolackschicht auf der ersten Schicht, wobei die Fotolackschicht so strukturiert wird, dass sie eine Öffnung aufweist, zum teilweisen Herauslösen der ersten Schicht, um einen lateralen Bereich der Oberfläche freizulegen, zum Aufbringen einer Kontaktfläche, die ein erstes Metall aufweist, im lateralen Bereich der Oberfläche, zum Entfernen der Fotolackschicht, zum Aufbringen einer zweiten Schicht, die ein optisch transparentes, elektrisch leitfähiges Material aufweist, und zum Aufbringen einer dritten Schicht, die ein zweites Metall aufweist.

公开(公告)号：DE102004057802B4

公开(公告)日：2011-03-24

申请号：DE102004057802

申请日：2004-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  WIRTH RALPH ,  STREUBEL KLAUS

IPC: H01S5/183 ,  H01L33/04 ,  H01L33/10 ,  H01L33/46 ,  H01S5/14

公开(公告)号：DE102008025922A1

公开(公告)日：2009-12-03

申请号：DE102008025922

申请日：2008-05-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  FRAUNHOFER GES FORSCHUNG

Inventor： SCHMID WOLFGANG ,  ECKSTEIN HANS-CHRISTOPH ,  ZEITNER UWE D

IPC: H01S5/065 ,  H01S5/10 ,  H01S5/16 ,  H01S5/20

Abstract: An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.

公开(公告)号：DE102007055177A1

公开(公告)日：2009-04-09

申请号：DE102007055177

申请日：2007-11-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  WINDISCH REINER

IPC: H01L33/00

Abstract: The diode has a semiconductor layer sequence (5) with an active area (18) on a semiconductor body (10), where the active area is suitably embedded in a wave guide (20, 22) for delivery of light. The active area is surrounded by an upper covering layer (24) and a lower covering layer (16) facing a substrate. The upper covering layer is attached on the semiconductor body in a bar shaped manner. Mesa flanks are attached to longitudinal ends of the bar shaped semiconductor body and are designed as diagonal, total reflecting mirrors. The mesa flanks are passivated with silicon-nitride or oxide. An independent claim is also included for a method for manufacturing a luminescence diode.

公开(公告)号：DE102007035896A1

公开(公告)日：2009-02-05

申请号：DE102007035896

申请日：2007-07-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  SCHMID WOLFGANG ,  SABATHIL MATTHIAS

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/62 ,  H01S5/02

Abstract: The body (100) has two carriers (1, 2), and a semiconductor layer sequence (3) between the two carriers. An active zone (4) generates electromagnetic radiation that is emitted transverse to a growth direction (7) of a semiconductor layer sequence from an edge of the body during operation of the body. The carriers are formed by a galvanic layer. The semiconductor layer sequence is based on arsenide compound semiconductor material, phosphide compound semiconductor material and nitride compound semiconductor material.

公开(公告)号：DE102007026925A1

公开(公告)日：2008-09-04

申请号：DE102007026925

申请日：2007-06-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： EBERHARD FRANZ ,  SCHMID WOLFGANG ,  SCHLERETH THOMAS

IPC: H01S5/20 ,  H01S5/065 ,  H01S5/16 ,  H01S5/343

Abstract: The integrated trapezoidal laser arrangement has an injector area (2) and an optical area expanded in the injector area, which is coupled in the cross section. One of the areas has the injector area and the expand area (3) has an active area with multiple of semiconductor material. The semiconductor material are mixed in a zone.

公开(公告)号：DE502005003172D1

公开(公告)日：2008-04-24

申请号：DE502005003172

申请日：2005-08-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  STREUBEL KLAUS ,  LINDER NORBERT

IPC: H01S5/183 ,  H01S5/14

公开(公告)号：DE102006011284A1

公开(公告)日：2007-08-30

申请号：DE102006011284

申请日：2006-03-10

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  MUELLER MARTIN

IPC: H01S5/04 ,  H01S5/183 ,  H01S5/20 ,  H01S5/34 ,  H01S5/40

Abstract: The device has an optically pumped surface-emitting vertical emitter (1) which emits in a vertical main radiating direction. A vertical section of the pumping radiation source (2) is configured so as to be index-guiding for pumping radiation in a lateral direction perpendicular to the main direction of pumping radiation and perpendicular to the vertical main radiating direction.

公开(公告)号：DE102004052686A1

公开(公告)日：2006-03-02

申请号：DE102004052686

申请日：2004-10-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  REILL WOLFGANG ,  ALBRECHT TONY ,  STEEGMUELLER ULRICH

IPC: H01L33/00 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183 ,  H01S5/187

Abstract: A semiconductor element comprises a curved mirror integrated into a monolithic semiconductor body (1). Preferably the curved mirror is a Bragg mirror and the semiconductor body is on a planar carrier (4). An independent claim is also included for a production process for the above.

公开(公告)号：DE10221858A1

公开(公告)日：2003-09-11

申请号：DE10221858

申请日：2002-05-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG

IPC: H01L33/20 ,  H01L33/00

Abstract: Radiation-emitting semiconductor component comprises a substrate (24,25), a semiconductor body (14) having an upper side (26) and a lower side (16) and containing an active zone emitting photons, a front side contact (30,32) electrically connected to the upper side of the semiconductor body, and a rear side contact electrically connected to the lower side of the semiconductor body. The substrate is formed by a quasi substrate joined to the semiconductor body using a wafer bonding process. The reflecting rear side contact is arranged between the quasi substrate and the semiconductor body. The semiconductor body tapers from its lower side to the upper side. An Independent claim is also included for a process for the production of the radiation-emitting semiconductor component. Preferred Features: The semiconductor body has a lower side lying parallel to the quasi substrate, an upper side lying parallel to the quasi substrate, and slanted sides running from the upper side to the lower side.