Abstract:
In a suspension arm (125) for at least one head (120) of a disk storage device, in which the suspension arm (125) terminates in a flexible suspension element (127) for urging the at least one head (120) towards the disk (105), the suspension element (127) has a hollow structure.
Abstract:
To increase the sensitivity of the sensor, the movable mass (40) forming the seismic mass is formed starting from the epitaxial layer (13) and is covered by a weighting region of tungsten (26c) which has high density. To manufacture it, buried conductive regions (2) are formed in the substrate (1); then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions (9a-9d) are formed on the buried conductive regions (2) so as to cover them partially; the epitaxial layer (13) is then grown, using a nucleus region; a tungsten layer (26) is deposited and defined and, using a silicon carbide layer (31) as mask, the suspended structure (40) is defined; finally the sacrificial region is removed, forming an air gap (38).
Abstract:
The optical two-dimensional position sensor (1) comprises a selective optical unit (9) which faces, and is displaceable relative to an integrated device (2). The selective optical unit (9) is formed by a polarised light source (4,5) and a filter with four quadrants (3) which permits passage of the light onto two quadrants only. The selective optical unit (9) is attached to a control lever (6) such as to translate in a plane along a first direction (X) and a second direction (Y), and to pivot around a third direction (W) which is orthogonal to the preceding directions. In a transparent package, the integrated device (2) comprises a first group of sensor elements (10 1 -10 3 ) which are spaced along the first direction (X), a second group of sensor elements (10 4 -10 7 ) which are spaced along the second direction (Y) and a third group of sensor elements (10 8 -10 9 ) which detect the angular position of the selective optical sensor. Electronics which is integrated with the sensor elements generates a code which is associated with each position which is assumed by the selective optical unit (9) and a control signal (S) which corresponds to the function required.
Abstract:
The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.