公开(公告)号：EP2331454A4

公开(公告)日：2014-11-26

申请号：EP09747424

申请日：2009-05-13

Applicant: INTEGRATED SENSING SYSTEMS INC

Inventor： SPARKS DOUGLAS RAY

IPC: B81C1/00 ,  H01L21/02 ,  H01L23/12

CPC classification number: B81C1/00119 ,  B01L3/502707 ,  B81B2201/0214 ,  B81B2201/0278 ,  B81B2201/058 ,  G01F1/8445 ,  H01L24/94 ,  H01L2224/48091 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/16152 ,  H01L2924/3025 ,  Y10T137/2191 ,  Y10T137/2224 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：EP2773586A2

公开(公告)日：2014-09-10

申请号：EP12790454.8

申请日：2012-11-02

Applicant: Continental Teves AG & Co. OHG

Inventor： GÜNTHNER, Stefan ,  SCHMID, Bernhard

IPC: B81B7/02 ,  B81C1/00 ,  G01D5/12

CPC classification number: G01P15/0888 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81C1/0023 ,  Y10T29/49002

Abstract: The invention relates to a micromechanical element (123a), to a component (100) having a micromechanical element (123a), and to a method for producing a component (100). The micromechanical element (123a) comprises a plurality of individual sensor elements (1'a, 2'a, 3'a, 23a), wherein a first physical measurement variable can be measured by means of a first individual sensor element (1'a, 2'a, 3'a, 23a) and a second physical measurement variable can be measured by means of a second individual sensor element (1'a, 2'a, 3'a, 23a).

公开(公告)号：EP2001062B1

公开(公告)日：2013-12-11

申请号：EP07740161.0

申请日：2007-03-28

Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

Inventor： HIRANO, Takayuki ,  KAWAKAMI, Nobuyuki ,  KANNAKA, Masato

IPC: B81C1/00 ,  C23C16/40 ,  C23C16/56 ,  G01F1/692 ,  G01J1/02 ,  H01L35/34 ,  H01L37/00

CPC classification number: G01F1/692 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81C1/00666 ,  B81C2201/0169 ,  B81C2201/0178 ,  C23C16/402 ,  C23C16/56 ,  Y10T428/24488 ,  Y10T428/24612

公开(公告)号：EP2035326B1

公开(公告)日：2011-06-15

申请号：EP07728389.3

申请日：2007-04-23

Applicant: Robert Bosch GmbH

Inventor： BENZEL, Hubert ,  ARMBRUSTER, Simon ,  SCHELLING, Christoph ,  HOECHST, Arnim ,  FEYH, Ando

IPC: B81B3/00 ,  G01J5/10 ,  G01K7/01

CPC classification number: B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2207/015 ,  B81C2201/0109 ,  G01J5/06 ,  G01J5/20

Abstract: The invention relates to a sensor, especially for location-independent detection. Said sensor comprises a substrate (1), at least one microstructured sensor element (52) having an electrical property that varies with temperature, and at least one membrane (36.1) above a cavern (26, 74, 94), the sensor element (52) being arranged on the lower face of the at least one membrane (36.1), and the sensor element (52) being connected via leads (60, 62; 98-1, 98-2, 100-1, 100-2) which extend in, on or below the membrane (36.1). According to the invention, especially a plurality of sensor elements (52) can be configured as diode pixels in a monocrystalline layer that is formed by epitaxial growth. In the membrane (36.1), suspension springs (70) can be configured that receive the individual sensor elements (52) in an elastic and insulating manner.

公开(公告)号：EP1333503A3

公开(公告)日：2009-11-18

申请号：EP03075166.3

申请日：2003-01-17

Applicant: Delphi Technologies, Inc.

Inventor： Chavan, Abhijeet V. ,  Logsdon, James H. ,  Chilcott, Dan W. ,  Christenson, John C. ,  Speck, Robert K.

IPC: H01L35/00 ,  H01L27/16

CPC classification number: B81B3/0072 ,  B81B2201/0278 ,  B81B2203/0127 ,  G01J5/02 ,  G01J5/024 ,  G01J5/12 ,  H01L27/16 ,  H01L2224/48463

Abstract: A process using integrated sensor technology in which a micromachined sensing element (12) and signal processing circuit (14) are combined on a single semiconductor substrate (20) to form, for example, an infrared sensor (10). The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm (16), after the circuit fabrication process is completed. The process generally entails forming a circuit device (14) on a substrate (20) by processing steps that include forming multiple dielectric layers (34,36,38,44,46) and at least one conductive layer (40,50) on the substrate (20). The dielectric layers (34,36,38,44,46) comprise an oxide layer (34) on a surface of the substrate (20) and at least two dielectric layers (36,46) that are in tension, with the conductive layer (40,50) being located between the two dielectric layers (36,46). The surface of the substrate (20) is then dry etched to form a cavity (32) and delineate the diaphragm (16) and a frame (18) surrounding the diaphragm (16). The dry etching step terminates at the oxide layer (34), such that the diaphragm (16) comprises the dielectric layers (34,36,38,44,46) and conductive layer (40,50). A special absorber (52) is preferably fabricated on the diaphragm (16) to promote efficient absorption of incoming infrared radiation.

公开(公告)号：EP1616159B1

公开(公告)日：2009-03-04

申请号：EP04742523.6

申请日：2004-04-16

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： YON, Jean-Jacques ,  OUVRIER-BUFFET, Jean-Louis ,  ASTIER, Astrid ,  VILAIN, Michel

IPC: G01J5/10 ,  G01J5/20 ,  B81B1/00 ,  B81B3/00

CPC classification number: G01J5/02 ,  B81B3/0081 ,  B81B2201/0278 ,  B81C2201/0115 ,  G01J5/0235 ,  G01J5/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An absorbent membrane (1) is fixingly suspended on one front face of a substrate (2) in a substantially parallel manner in relation to said substrate (2) by at least one honeycomb structure which thermally insulates the membrane of the substrate (2) and is disposed on a plane which is substantially perpendicular in relation to the substrate (2). The detector can comprise arms (3) which are coupled to the absorbent membrane (1). The honeycomb structures can be respectively disposed between one of the arms (3) and the substrate (2). The honeycomb structure can be comprised of a plurality of thin superposed layers (6) which are separated by means of cross-members (7) or by superposed rows of arcades which are comprised of thin layers. The honeycomb structure can comprise a porous plug element.

公开(公告)号：EP1616159A1

公开(公告)日：2006-01-18

申请号：EP04742523.6

申请日：2004-04-16

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： YON, Jean-Jacques ,  OUVRIER-BUFFET, Jean-Louis ,  ASTIER, Astrid ,  VILAIN, Michel

IPC: G01J5/10 ,  G01J5/20 ,  B81B1/00 ,  B81B3/00

CPC classification number: G01J5/02 ,  B81B3/0081 ,  B81B2201/0278 ,  B81C2201/0115 ,  G01J5/0235 ,  G01J5/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An absorbent membrane (1) is fixingly suspended on one front face of a substrate (2) in a substantially parallel manner in relation to said substrate (2) by at least one honeycomb structure which thermally insulates the membrane of the substrate (2) and is disposed on a plane which is substantially perpendicular in relation to the substrate (2). The detector can comprise arms (3) which are coupled to the absorbent membrane (1). The honeycomb structures can be respectively disposed between one of the arms (3) and the substrate (2). The honeycomb structure can be comprised of a plurality of thin superposed layers (6) which are separated by means of cross-members (7) or by superposed rows of arcades which are comprised of thin layers. The honeycomb structure can comprise a porous plug element.

公开(公告)号：EP1203208A1

公开(公告)日：2002-05-08

申请号：EP00953738.2

申请日：2000-07-28

Applicant: Xactix, Inc.

Inventor： LEBOUITZ, Kyle

IPC: G01J5/40

CPC classification number: G01J5/40 ,  B81B3/0081 ,  B81B2201/0278 ,  B81B2201/032 ,  B81B2203/0118 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/06

Abstract: This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

公开(公告)号：EP0684462A3

公开(公告)日：1997-05-07

申请号：EP95106968.1

申请日：1995-05-08

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Hierold, Christofer, Dr.

IPC: G01K7/02 ,  H01L49/00 ,  H01L27/16

CPC classification number: H01L27/16 ,  B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0315 ,  B81C1/00246 ,  B81C1/0069 ,  B81C2201/053 ,  B81C2203/0136 ,  B81C2203/0735 ,  G01F1/6845 ,  G01F1/6888 ,  G01K7/015 ,  G01P15/0802

Abstract: Halbleiterbauelement mit monolithisch integrierten elektronischen Schaltungen und monolithisch integriertem Sensor/Aktuator, bei dem der Sensor/Aktuator mit Methoden des Surface-Micromachining hergestellt ist in einer z. B. mit Sensorstegen (6) strukturierten Sensorschicht (3) aus Polysilizium und diese Sensorstege (6) von einem Siliziumsubstrat (1) durch einen in einer Opferschicht (2) hergestellten und mit einer Verschlußschicht (5) nach außen gasdicht verschlossenen Hohlraum (4) thermisch isoliert sind.

Abstract translation: 具有单片集成电子电路和单片集成传感器/辅助器的半导体部件，由此传感器/致动器由例如由传感器网（6）构成的多晶硅传感器层（3）中的表面微加工的方法制造，以及 这些传感器网（6）通过在牺牲层（2）中产生的空腔（4）与硅衬底（1）热绝缘，并且通过封闭层（5）朝向外部气密地封闭。

公开(公告)号：EP3228583A4

公开(公告)日：2018-07-25

申请号：EP15866031

申请日：2015-08-20

Applicant: CSMC TECHNOLOGIES FAB1 CO LTD

Inventor： JING ERRONG

IPC: B81B7/02 ,  B81C1/00 ,  G01J5/02 ,  G01J5/08

CPC classification number: B81B7/02 ,  B81B2201/0278 ,  B81B2203/0118 ,  B81C1/00 ,  B81C1/0015 ,  B81C2201/0197 ,  G01J1/04 ,  G01J1/42 ,  G01J5/024 ,  G01J5/0853

Abstract: A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body (310) on a substrate (100), and a cantilever beam (320) connected to the substrate (100) and the first film body (310); forming a sacrificial layer (400) on the first film body (310) and the cantilever beam (320); patterning the sacrificial layer (400) located on the first film body (310) to manufacture a recessed portion (410) used for forming a support structure (520), the bottom of the recessed portion (410) being exposed of the first film body (310); depositing a dielectric layer (500) on the sacrificial layer (400); patterning the dielectric layer (500) to manufacture a second film body (510) and the support structure (520), the support structure (520) being connected to the first film body (310) and the second film body (510); and removing the sacrificial layer (400) to obtain the MEMS double-layer suspension microstructure.