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    Method for creating a micromechanical membrane structure and MEMS component
    61.
    发明授权
    Method for creating a micromechanical membrane structure and MEMS component 有权
    用于产生微机械膜结构和MEMS部件的方法

    公开(公告)号：US08691611B2

    公开(公告)日：2014-04-08

    申请号：US13290905

    申请日：2011-11-07

    Applicant: Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

    Inventor： Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

    IPC: H01L21/3065

    CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81C2201/0112 ,  B81C2201/0133 ,  B81C2201/0136

    Abstract: In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least the intended membrane surface area. In addition, in a DRIE (deep reactive ion etching) process applied to the back side of the silicon substrate, a cavity is created beneath the doped area, which DRIE process is aborted before the cavity reaches the doped area. The cavity is then deepened in a KOH etching process in which the doped substrate area functions as an etch stop, so that the doped substrate area remains as a basic membrane over the cavity.

    Abstract translation: 在制造微机械膜结构的方法中，在硅衬底的前侧产生掺杂区域，其掺杂区域的深度对应于所需的膜厚度，并且其掺杂区域的横向范围至少覆盖预期的 膜表面积。 另外，在施加到硅衬底的背侧的DRIE（深反应离子蚀刻）工艺中，在掺杂区域之下产生空腔，在空腔到达掺杂区域之前DRIE工艺被中止。 然后在KOH蚀刻工艺中加深空腔，其中掺杂衬底区域用作蚀刻停止层，使得掺杂衬底区域保持为空腔上的基本膜。

    Gap tuning for surface micromachined structures in an epitaxial reactor
    65.
    发明申请
    Gap tuning for surface micromachined structures in an epitaxial reactor 有权
    外延反应器中表面微加工结构的间隙调整

    公开(公告)号：US20050014374A1

    公开(公告)日：2005-01-20

    申请号：US10917168

    申请日：2004-08-12

    Applicant: Aaron Partridge ,  Markus Lutz

    Inventor： Aaron Partridge ,  Markus Lutz

    IPC: B81B3/00 ,  B81C1/00 ,  B81C99/00 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461

    CPC classification number: B81C1/00063 ,  B81B3/0086 ,  B81C2201/0112 ,  B81C2203/0136 ,  B81C2203/0145

    Abstract: A method for adjusting with high precision the width of gaps between micromachined structures or devices in an epitaxial reactor environment. Providing a partially formed micromechanical device, comprising a substrate layer, a sacrificial layer including silicon dioxide deposited or grown on the substrate and etched to create desired holes and/or trenches through to the substrate layer, and a function layer deposited on the sacrificial layer and the exposed portions of the substrate layer and then etched to define micromechanical structures or devices therein. The etching process exposes the sacrificial layer underlying the removed function layer material. Cleaning residues from the surface of the device, then epitaxially depositing a layer of gap narrowing material selectively on the surfaces of the device. The selection of deposition surfaces determined by choice of materials and the temperature and pressure of the epitaxy carrier gas. The gap narrowing epitaxial deposition continues until a desired gap width is achieved, as determined by, for example, an optical detection arrangement. Following the gap narrowing step, the micromachined structures or devices may be released from their respective underlying sacrificial layer.

    Abstract translation: 一种用于在外延反应器环境中高精度调节微加工结构或器件之间的间隙宽度的方法。 提供部分形成的微机械装置，包括衬底层，牺牲层，包括沉积或生长在衬底上的二氧化硅，并被蚀刻以形成通过衬底层的期望的空穴和/或沟槽;以及沉积在牺牲层上的功能层， 衬底层的暴露部分，然后蚀刻以在其中限定微机械结构或器件。 蚀刻工艺暴露了去除的功能层材料下面的牺牲层。 从装置的表面清洁残留物，然后在装置的表面上选择性地外延沉积间隙变窄材料层。 通过选择材料和外延载气的温度和压力来确定沉积表面的选择。 缩小外延沉积的间隙持续到通过例如光学检测装置确定的期望的间隙宽度达到。 在间隙变窄步骤之后，微加工结构或器件可以从它们各自的底层牺牲层释放。

    Gap tuning for surface micromachined structures in an epitaxial reactor
    66.
    发明授权
    Gap tuning for surface micromachined structures in an epitaxial reactor 有权

    公开(公告)号：US06808953B2

    公开(公告)日：2004-10-26

    申请号：US10334463

    申请日：2002-12-31

    Applicant: Aaron Partridge ,  Markus Lutz

    Inventor： Aaron Partridge ,  Markus Lutz

    IPC: H01L2100

    CPC classification number: B81C1/00063 ,  B81B3/0086 ,  B81C2201/0112 ,  B81C2203/0136 ,  B81C2203/0145

    Abstract: A method for adjusting with high precision the width of gaps between micromachined structures or devices in an epitaxial reactor environment. Providing a partially formed micromechanical device, comprising a substrate layer, a sacrificial layer including silicon dioxide deposited or grown on the substrate and etched to create desired holes and/or trenches through to the substrate layer, and a function layer deposited on the sacrificial layer and the exposed portions of the substrate layer and then etched to define micromechanical structures or devices therein. The etching process exposes the sacrificial layer underlying the removed function layer material. Cleaning residues from the surface of the device, then epitaxially depositing a layer of gap narrowing material selectively on the surfaces of the device. The selection of deposition surfaces determined by choice of materials and the temperature and pressure of the epitaxy carrier gas. The gap narrowing epitaxial deposition continues until a desired gap width is achieved, as determined by, for example, an optical detection arrangement. Following the gap narrowing step, the micromachined structures or devices may be released from their respective underlying sacrificial layer.

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