公开(公告)号：EP1826174A2

公开(公告)日：2007-08-29

申请号：EP07100826.2

申请日：2007-01-19

Applicant: OMRON CORPORATION

Inventor： Kasai, Takashi ,  Wakabayashi, Shuichi

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81C2201/0167 ,  C23C16/24 ,  C23C16/56

Abstract: A method for forming a thin film structure, which has small tensile stress due to controlled mechanical stress, and is made to be conductive, is provided. A lower film including polysilicon thin film is formed on a substrate such as Si substrate, then an impurity such as P is doped into the lower film and thermally diffused, thereby the lower film is made conductive. Then, an upper film is deposited on the lower film, the upper film including a polysilicon thin film that is simply deposited and not made to be conductive. The upper film has a tensile stress in an approximately the same level as compressive stress of the lower film, and a thin film structure as a whole, the structure including the lower film and the upper film, is adjusted to have small tensile stress.

Abstract translation: 提供了一种形成薄膜结构的方法，该薄膜结构由于受到机械应力的控制而具有较小的拉伸应力，并被制成导电性。 在诸如Si衬底的衬底上形成包括多晶硅薄膜的下部膜，然后将诸如P的杂质掺杂到下部膜中并热扩散，从而使下部膜导电。 然后，上膜被沉积在下膜上，上膜包括简单地沉积并不导电的多晶硅薄膜。 上部膜具有与下部膜的压缩应力大致相同水平的拉伸应力，并且整体上由薄膜结构体构成，包括下部薄膜和上部薄膜的结构被调整为具有较小的拉伸应力。

公开(公告)号：EP1493712A3

公开(公告)日：2005-12-14

申请号：EP04102666.7

申请日：2004-06-11

Applicant: Dalsa Semiconductor Inc.

Inventor： Ouellet, Luc ,  Antaki, Robert

IPC: B81B3/00

CPC classification number: B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

Abstract: A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/= 100Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/= 100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/= 100Mpa.

Abstract translation: 公开了一种制造硅基微结构的方法，其包括沉积掺杂有第一和第二掺杂剂的导电非晶硅以产生具有小于+ / = 100Mpa的残余机械应力的结构。 掺杂剂可以沉积在连续的层中以产生具有小于+ / = 100Mpa的残余机械应力的叠层结构或同时产生具有小于+ / = 100Mpa的机械应力的叠层结构。

公开(公告)号：EP1183566A1

公开(公告)日：2002-03-06

申请号：EP00930822.2

申请日：2000-05-19

Applicant: MCNC

Inventor： GOODWIN-JOHANSSON, Scott, Halden

IPC: G02B26/02

CPC classification number: B81C1/00666 ,  B81B2201/032 ,  B81B2203/0118 ,  B81C2201/0167 ,  G02B6/353 ,  G02B6/3566 ,  G02B6/357 ,  G02B6/3594 ,  H01H59/0009 ,  H01H2059/0081

Abstract: A MEMS (Micro Electro Mechanical System) electrostatic device operated with lower and more predictable operating voltages is provided. An electrostatic actuator, an electrostatic attenuator of electromagnetic radiation, and a method for attenuating electromagnetic radiation are provided. Improved operating voltage characteristics are achieved by defining a non increasing air gap between the substrate electrode and flexible composite electrode within the electrostatic device. A medial portion of a multilayer flexible composite overlying the electromechanical substrate is held in position regardless of the application of electrostatic force, thereby sustaining the defined air gap. The air gap is relatively constant in separation from the underlying microelectronic surface when the medial portion is cantilevered in one embodiment. A further embodiment provides an air gap that decreases to zero when the medial portion approaches and contacts the underlying microelectronic surface. A moveable distal portion of the flexible composite is biased to curl naturally due to differences in thermal coefficients of expansion between the component layers. In response to electrostatic forces, the distal portion moves and thereby alters the distance separating the flexible composite from the underlaying microelectronic surface. Structures and techniques for controlling bias in the medial portion and the resulting air gap are provided. The electrostatic device may be disposed to selectively clear or intercept the path of electromagnetic radiation. Materials used in the attenuator can be selected to pass, reflect, or absorb various types of electromagnetic radiation. A plurality of electromagnetic attenuators may be disposed in an array and selectively activated in subsets.

公开(公告)号：WO2016179596A1

公开(公告)日：2016-11-10

申请号：PCT/US2016/031509

申请日：2016-05-09

Applicant: TEXAS INSTRUMENTS INCOPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED

Inventor： DELLAS, Nicholas, Stephen

IPC: H01L21/318 ,  C23C16/34 ,  H05K3/02

CPC classification number: H01L29/408 ,  B81B3/0072 ,  B81B2203/0118 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3245 ,  H01L21/823864 ,  H01L23/291 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/778 ,  H01L29/7787

Abstract: In described examples, a microelectronic device (102) contains a high performance silicon nitride layer, which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia NH3 and dichlorosilane DCS gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800°C to 820°C.

Abstract translation: 在所述实施例中，微电子器件（102）包含化学计量在2原子％以内的高性能氮化硅层，具有600MPa〜1000MPa的低应力，低于5原子％的氢含量， 由LPCVD过程形成。 LPCVD方法使用氨的NH 3和二氯硅烷DCS气体，其比例为4至6，压力为150毫托，250毫托，温度为800℃至820℃。

公开(公告)号：WO2016033349A1

公开(公告)日：2016-03-03

申请号：PCT/US2015/047238

申请日：2015-08-27

Applicant: KIONIX, INC. ,  ADAMS, Scott, G. ,  BLACKMER, Charles, W. ,  LYNCH, Kristin, J.

Inventor： ADAMS, Scott, G. ,  BLACKMER, Charles, W. ,  LYNCH, Kristin, J.

IPC: G01L9/00

CPC classification number: G01L9/003 ,  B81B3/0072 ,  B81B2201/0264 ,  B81C1/00 ,  B81C1/00666 ,  B81C2201/0167 ,  G01L9/0027 ,  G01L9/0055 ,  G01L9/0073 ,  G01L9/008 ,  G01L9/0082 ,  G01L13/00 ,  G01L13/02 ,  G01P15/006 ,  G01P15/08 ,  H01L21/00

Abstract: Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.

Abstract translation: 本文描述了使用包括可变形压力容器的压力传感器进行压力感测的技术。 压力容器是具有限定空隙的横截面的物体。 可变形的压力容器是具有至少一个弯曲部分的压力容器，该弯曲部分构造成基于空腔中的腔体压力之间的压力差在结构上变形（例如弯曲，剪切，细长等），其中至少一个 压力容器的一部分被悬浮并且在压力容器中存在容器压力。

公开(公告)号：WO2012156585A1

公开(公告)日：2012-11-22

申请号：PCT/FI2012/050456

申请日：2012-05-11

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT ,  PRUNNILA, Mika ,  JAAKKOLA, Antti ,  PENSALA, Tuomas

Inventor： PRUNNILA, Mika ,  JAAKKOLA, Antti ,  PENSALA, Tuomas

IPC: H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0177 ,  G06F17/5045 ,  H03H9/02448 ,  H03H9/2447 ,  H03H2009/2442

Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100°C. The device can be a resonator. Also a method of designing the device is disclosed.

Abstract translation: 本发明涉及一种微机械装置，其包括能够偏转或谐振并且包括具有不同材料特性的至少两个区域的半导体元件和功能性耦合到所述半导体元件的驱动或感测装置。 根据本发明，所述区域中的至少一个包括一种或多种n型掺杂剂，并且所述区域的相对体积，掺杂浓度，掺杂剂和/或晶体取向被构造成使得广义刚度的温度敏感度 至少在区域的一个温度下符号相反，半导体元件的整体刚度的总体温度漂移在100℃的温度范围内为50ppm以下。 该器件可以是谐振器。 还公开了一种设计该设备的方法。

公开(公告)号：WO2011162949A2

公开(公告)日：2011-12-29

申请号：PCT/US2011039560

申请日：2011-06-08

Applicant: IBM ,  DANG DINH ,  DOAN THAI ,  DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K ,  TWOMBLY JOHN G ,  WHITE ERIC J

Inventor： DANG DINH ,  DOAN THAI ,  DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K ,  TWOMBLY JOHN G ,  WHITE ERIC J

IPC: B81B3/00 ,  B81C1/00 ,  H01H59/00

CPC classification number: B81C1/00365 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60a, 60b) having a planar surface using a reverse damascene process.

Abstract translation: 提供了平面腔微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括使用反向镶嵌工艺形成具有平面表面的至少一个微机电系统（MEMS）腔（60a，60b）。

公开(公告)号：WO2009086978A3

公开(公告)日：2010-04-01

申请号：PCT/EP2008065575

申请日：2008-11-14

Applicant: BOSCH GMBH ROBERT ,  PIRK TJALF ,  PINTER STEFAN ,  BENZEL HUBERT ,  WEBER HERIBERT ,  KRUEGER MICHAEL ,  SATTLER ROBERT ,  MUCHOW JOERG ,  FRITZ JOACHIM ,  SCHELLING CHRISTOPH ,  FRIESE CHRISTOPH

Inventor： PIRK TJALF ,  PINTER STEFAN ,  BENZEL HUBERT ,  WEBER HERIBERT ,  KRUEGER MICHAEL ,  SATTLER ROBERT ,  MUCHOW JOERG ,  FRITZ JOACHIM ,  SCHELLING CHRISTOPH ,  FRIESE CHRISTOPH

IPC: B81C1/00

CPC classification number: B81C1/00666 ,  B81B2201/033 ,  B81B2201/042 ,  B81B2203/0136 ,  B81B2203/019 ,  B81C1/00166 ,  B81C2201/0167 ,  H02N1/002

Abstract: The invention relates to a production method for a micromechanical electrostatic adjuster device (10), comprising the steps: application of a first conducting layer (12) to a substrate (28,30), etching the first conducting layer (12) to form at least one first electrode (16) in the material of the first conducting layer (12), application of a separation layer (32a) to the first conducting layer (12), application of a second conducting layer to the separation layer (32a), etching the second conducting layer to form at least one second electrode (22) in the material of the second conducting layer and application of a cover layer (40) to the second electrode (22) and bending the second electrode (22) by means of a mechanical compression load exerted on the second electrode (22) by means of the cover layer (40). The invention further relates to a corresponding micromechanical electrostatic adjuster device.

Abstract translation: 本发明涉及一种用于微机械静电调节器（10）的制造方法，包括以下步骤：基部（28,30）上沉积第一导电层（12），蚀刻所述第一导电层（12），用于形成至少一个第一电极（ 16）从第一导电层（12）的材料，在施加第一导电层（12）上的脱模层（32a），其上沉积隔离层（32A）上的第二导电层，蚀刻第二导电层，以形成至少一个 从第二导电层的材料，并施加于第二电极（22）的覆盖层（40）和由在第二电极上的覆盖层（40）中的一个的装置的第二电极（22）的弯曲的第二电极（22）（22） 施加机械压应力。 本发明还涉及一种相应的微机械静电调节器。

公开(公告)号：WO2007036422A1

公开(公告)日：2007-04-05

申请号：PCT/EP2006/066145

申请日：2006-09-07

Applicant: SIEMENS AKTIENGESELLSCHAFT ,  SCHREITER, Matthias ,  SCHIER, Michael ,  PITZER, Dana ,  FREUDENBERG, Oliver

Inventor： SCHREITER, Matthias ,  SCHIER, Michael ,  PITZER, Dana ,  FREUDENBERG, Oliver

IPC: B81C1/00

CPC classification number: B81C1/00666 ,  B81B2203/0127 ,  B81C1/00579 ,  B81C2201/0167

Abstract: Die Erfindung betrifft eine Vorrichtung mit einem Funktionselement (18) und einem Si-Substrat (22) mit Membran (29), auf der das Funktionselement (18) angeordnet ist. Die Membran (29) umfasst eine nitridische Schicht (23) und eine metallische Schicht (21), wobei die metallische Schicht (21) auf dem Si-Substrat (22) und die nitridische Schicht (23) auf der metallischen Schicht (21) angeordnet ist.

Abstract translation: 本发明涉及一种具有在其上布置所述功能元件（18）的功能元件（18）中，用膜（29）的Si基板（22）的装置。 所述膜（29）包括氮化物层（23）和金属层（21），其中所述金属层（21），设置在Si基板（22）和该金属层上的氮化物层（23）（21）上 是。

公开(公告)号：WO2004064090A3

公开(公告)日：2004-09-10

申请号：PCT/US2004000021

申请日：2004-01-05

Applicant: HONEYWELL INT INC

Inventor： HORNING ROBERT D ,  SCULLARD TIMOTHY LOUIS ,  MCDONALD ROBINSON

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  Y10T74/12

Abstract: A method for controlling bow in wafers (50) which utilize doped layers is described. The method includes depositing a silicon-germanium layer (52) onto a substrate (14), depositing an undoped buffer layer (56) onto the silicon-germanium layer, and depositing a silicon-boron layer (58) onto the undoped layer.

Abstract translation: 描述了一种用于控制利用掺杂层的晶片（50）中的弓的方法。 该方法包括在衬底（14）上沉积硅 - 锗层（52），在硅 - 锗层上沉积未掺杂的缓冲层（56），并且在未掺杂的层上沉积硅 - 硼层（58）。