公开(公告)号：KR100479300B1

公开(公告)日：2005-07-07

申请号：KR1019980003251

申请日：1998-02-05

Applicant: 삼성전자주식회사

Inventor： 문상식 ,  박동진

IPC: H01L21/00

Abstract: 본 발명은 티씨(TC : Total Carbon)를 용이하게 응축시켜 재현성있는 분석 공정을 진행할 수 있는 티오씨 분석기의 티씨 응축용 케미컬에 관한 것이다.
본 발명에 따른 티오씨 분석기의 티씨 응축용 케미컬은, 5 내지 15 중량%의 순수 인산과 잔량의 탈이온수가 혼합되어 있는 것에 특징이 있다. 따라서, 재현성있는 분석공정을 진행 할 수 있는 효과가 있다.

公开(公告)号：KR1020050061198A

公开(公告)日：2005-06-22

申请号：KR1020030093399

申请日：2003-12-18

Applicant: 삼성전자주식회사

Inventor： 신경수 ,  윤광준 ,  최선용 ,  전충삼 ,  박동진

IPC: H01L21/66

CPC classification number: G03F7/70616

Abstract: 본 발명은 반도체 패턴의 거리 측정 시스템 및 거리 측정 방법을 제공한다. 이 시스템은 현미경 및 제어장치를 포함한다. 제어장치는 제1/제2 지점을 포함하는 제1/제2 시역내 제1/제2 기준점의 제1/제2 기준 좌표값을 산출하고, 제1/제2 기준점에 대한 제1/제2 지점의 제1/제2 지점 좌표값을 산출하며, 제1/제2 기준 좌표값 및 제1/제2 지점 좌표값으로 부터 제1/제2 지점의 제1/제2 실좌표값을 산출하고, 제1 및 제2 실좌표값들로 부터 제1 및 제2 지점들간의 거리를 산출한다.

公开(公告)号：KR100476697B1

公开(公告)日：2005-06-07

申请号：KR1019970065170

申请日：1997-12-02

Applicant: 삼성전자주식회사

Inventor： 박동진

IPC: G01N30/62

Abstract: 본 발명은 가스크로마토그래피를 이용하여 물을 함유하는 유기물시료를 분석하는 분석장치에 관한 것이다.
본 발명에 따른 가스크로마토그래피를 이용한 물함유 유기물시료의 분석장치는, 필수구성요소로서 인젝터, 분석컬럼 및 검출기 등을 포함하여 이루어지는 가스크로마토그래피에서 상기 인젝터와 분석컬럼 사이에 라이너와 블랭크컬럼을 연속으로 설치하여 이루어짐을 특징으로 한다.
따라서, 통상 가스크로마토그래피용으로 사용되는 라이너와 충진물을 넣지 않은 블랭크컬럼을 인젝터와 분석컬럼사이에 연결시켜 물을 소량 함유하는 유기물시료에 대하여 물을 제거하기 위한 전처리를 수행하지 않고도 간단히 유기물시료를 높은 신뢰도로 분석할 수 있도록 하는 효과가 있다.

公开(公告)号：KR1020050013371A

公开(公告)日：2005-02-04

申请号：KR1020030051996

申请日：2003-07-28

Applicant: 삼성전자주식회사

Inventor： 편희수 ,  윤광준 ,  김영환 ,  최승민 ,  김용식 ,  김균래 ,  전충삼 ,  박동진 ,  신경수

IPC: H01L21/66

Abstract: PURPOSE: A wafer inspection apparatus is provided to improve space efficiency and to obtain a simple structure thereof, a rapid inspection and classification of wafers. CONSTITUTION: A wafer inspection apparatus includes a sample die(10), a sample die moving unit(20), an object lens(32) and a lens driving unit(33). A wafer(1) is supported by the sample die. The sample die is moved vertically by the sample die moving unit. The wafer is observed in a position spaced apart from the surface of the wafer by the object lens. A distance between the object lens and the surface of the wafer supported by the sample die is adjusted by the lens driving unit.

Abstract translation: 目的：提供晶片检查装置，以提高空间效率并获得其简单结构，快速检查和分类晶片。 构成：晶片检查装置包括样品管芯（10），样品管芯移动单元（20），物镜（32）和透镜驱动单元（33）。 晶片（1）由样品芯片支撑。 样品模移动单元垂直移动。 在通过物镜与晶片的表面间隔开的位置观察晶片。 通过透镜驱动单元来调整物镜与由样品管芯支撑的晶片的表面之间的距离。

公开(公告)号：KR1020040104033A

公开(公告)日：2004-12-10

申请号：KR1020030035404

申请日：2003-06-02

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  전상문 ,  도인회 ,  전필권

IPC: G03F7/32

CPC classification number: C11D11/0047 ,  C11D7/3218 ,  C11D7/3263 ,  G03F7/425 ,  H01L21/31133 ,  H01L24/11 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/00014

Abstract: PURPOSE: Provided is a stripper composition for stripping a photoresist pattern efficiently, which has a simple composition and is useful for the formation of a bump, i.e., a connection terminal in semiconductor chips. CONSTITUTION: The composition for stripping a photoresist pattern in order to form a bump essentially comprises 13-37 wt% of monoethanolamine and 63-87 wt% of dimethylacetamide. The method for forming a bump comprises the steps of: providing a substrate(110) having a metal line pattern(100) and forming a protection layer pattern(120) having an opening through which the top of the metal pattern is exposed partially; forming a photoresist pattern having a bump opening for exposing the first opening on the protection layer pattern; forming a bump(160) by growing metal in the bump opening; and stripping the photoresist pattern with the above photoresist stripper composition.

Abstract translation: 目的：提供一种有效剥离光致抗蚀剂图案的剥离剂组合物，其具有简单的组成并且可用于形成凸块，即半导体芯片中的连接端子。 构成：用于剥离光致抗蚀剂图案以形成凸块的组合物基本上包含13-37重量％的单乙醇胺和63-87重量％的二甲基乙酰胺。 用于形成凸块的方法包括以下步骤：提供具有金属线图案（100）并形成具有开口的保护层图案（120）的基底（110），金属图案的顶部通过该开口部分露出; 形成具有用于暴露所述保护层图案上的所述第一开口的凸起开口的光致抗蚀剂图案; 通过在所述凸起开口中生长金属来形成凸块（160）; 并用上述光致抗蚀剂剥离剂组合物剥离光刻胶图案。

公开(公告)号：KR1020040038999A

公开(公告)日：2004-05-10

申请号：KR1020020066614

申请日：2002-10-30

Applicant: 삼성전자주식회사

Inventor： 전충삼 ,  전상문 ,  최선용 ,  박동진 ,  최정현

IPC: H01L21/66

CPC classification number: G06T7/0006 ,  G06T2207/30148

Abstract: PURPOSE: An analyzing method and apparatus using an FFT(Fast Fourier Transformation) process are provided to automatically check the abnormal state of an analysis region. CONSTITUTION: An image is generated from an analysis region(S21,S23,S25). The image is transformed into data by carrying out an FFT process(S27). At this time, the data has predetermined frequency. Whether the analysis region has abnormity, or not, it is decided by analyzing the generated data(S29). Preferably, the analysis region has a periodical pattern. Preferably, the analysis region is formed on a semiconductor substrate and a cell region is used as the analysis region. Preferably, the periodical pattern is formed by carrying out an etching process.

Abstract translation: 目的：提供使用FFT（快速傅里叶变换）过程的分析方法和装置，以自动检查分析区域的异常状态。 构成：从分析区域生成图像（S21，S23，S25）。 通过进行FFT处理将图像变换为数据（S27）。 此时，数据具有预定的频率。 分析区域是否具有异常，通过分析生成的数据来决定（S29）。 优选地，分析区域具有周期性图案。 优选地，在半导体衬底上形成分析区域，并且使用单元区域作为分析区域。 优选地，通过进行蚀刻工艺来形成周期性图案。

公开(公告)号：KR1020020084482A

公开(公告)日：2002-11-09

申请号：KR1020010023774

申请日：2001-05-02

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  김경대 ,  정회식 ,  전필권 ,  김영호

IPC: C11D7/10

CPC classification number: C11D7/06 ,  C11D7/10 ,  C11D7/264 ,  C11D7/32 ,  C11D7/5004 ,  C11D11/0047 ,  Y10S134/902

Abstract: PURPOSE: A cleansing solution and a removing method of an organic component using the solution are provided, to remove photoresist and/or a cured antireflection coating component from a wafer effectively. CONSTITUTION: The cleansing solution comprises 5-30 wt% of an ammonium hydroxide salt; 23-70 wt% of an organic solvent; and 10-50 wt% of water. Preferably the ammonium hydroxide salt is selected from the group consisting of (NH3OH)2SO4, NH3OHCl, NH3OHNO3 and (NH3OH)PO4; and the organic solvent is at least one selected from the group consisting of acetone, acetonitrile and methyl isobutyl ketone. The method for removing an organic component comprises the steps of coating an organic component on a semiconductor wafer loaded in a certain equipment; separating the equipment and dipping it into the cleansing solution; and rising and drying the equipment.

Abstract translation: 目的：提供使用该溶液的清洁溶液和有机成分的除去方法，从而有效地从晶片上除去光致抗蚀剂和/或固化的抗反射涂层成分。 构成：清洁溶液含有5-30重量％的氢氧化铵盐; 23-70重量％的有机溶剂; 和10-50重量％的水。 优选地，氢氧化铵盐选自（NH 3 OH）2 SO 4，NH 3 OHCl，NH 3 OHNO 3和（NH 3 OH）PO 4; 有机溶剂为选自丙酮，乙腈和甲基异丁基酮中的至少一种。 除去有机成分的方法包括以下步骤：在装载在某些设备中的半导体晶片上涂布有机成分; 分离设备并将其浸入清洁溶液中; 并上升和干燥设备。

公开(公告)号：KR1020020054887A

公开(公告)日：2002-07-08

申请号：KR1020000084151

申请日：2000-12-28

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  이춘득 ,  길준잉 ,  박제응

IPC: G03F7/42

CPC classification number: G03F7/425 ,  C11D1/526 ,  C11D7/10 ,  G03F7/30 ,  G03F7/34 ,  G03F7/38 ,  G03F7/405

Abstract: PURPOSE: Provided is a composition for removing resist, polymers, organometallic polymers, and metal oxides, which dose not damage a lower membrane and dose not leave residues after rinsing. CONSTITUTION: The composition for removing resist contains: alkoxy N-hydroxy alkyl alkane amide(formula 1: R4-O-R3-CO-N-R1R2OH); at least one compound selected from the group consisting of alkanol amine(formula 2: NH-R1-R2OH), a polar substance with a dipole moment of more than 3, and an attack inhibitor(formula 3:R6(OH)n); a viscosity controlling agent. The polar substance is water, methanol, or dimethyl sulfoxide. In the formula, R1 is H, C1-C5 hydrocarbon, or aromatic hydrocarbon having 1-3 rings, R2 is C1-C5 hydrocarbon or aromatic hydrocarbon having 1-3 rings, R3 and R4 are each C1-C5 hydrocarbon, R6 is C1-C5 hydrocarbon, -COOH bonded C1-C5 hydrocarbon, aromatic hydrocarbon having 1-3 rings, or -COOH bonded aromatic hydrocarbon having 1-3 rings, and n is an integer of 1-4.

Abstract translation: 目的：提供一种用于去除抗蚀剂，聚合物，有机金属聚合物和金属氧化物的组合物，其不损坏下膜并且在冲洗后不留下残留物。 构成：去除抗蚀剂的组合物含有：烷氧基N-羟烷基烷酰胺（式1：R4-O-R3-CO-N-R1R2OH）; 选自链烷醇胺（式2：NH-R 1 -R 2 OH），极偶极矩大于3的极性物质和攻击抑制剂（式3：R6（OH）n）中的至少一种化合物; 粘度控制剂。 极性物质是水，甲醇或二甲基亚砜。 式中R 1为H，C 1 -C 5烃或具有1-3个环的芳烃，R 2为C 1 -C 5烃或具有1-3个环的芳烃，R 3和R 4各自为C 1 -C 5烃基，R 6为C 1 -C 5烃基，-COOH键合的C1-C5烃，具有1-3个环的芳族烃，或具有1-3个环的-COOH键合的芳族烃，n是1-4的整数。

公开(公告)号：KR1020010048330A

公开(公告)日：2001-06-15

申请号：KR1019990052995

申请日：1999-11-26

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  길준잉 ,  박제응 ,  전상문

IPC: G03F7/32 ,  G03F7/42 ,  G03F7/30

CPC classification number: C11D7/10 ,  C11D3/32 ,  C11D3/3942 ,  C11D7/06 ,  C11D7/08 ,  C11D7/261 ,  C11D7/3218 ,  C11D7/3263 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/31133

Abstract: PURPOSE: A resist removing composition is provided, which excellently removes organic polymer and metal oxides as well as the resist and does not damage the lower part film. And a resist removing method using the same is also provided. CONSTITUTION: The resist removing composition comprises: (i) an alkoxy N-hydroxyalkyl alkane amide; (ii) at least one compound selected from the group consisting of alkanol amine, a polar substance having a dipole moment of not less than 3 and a damage-proofing agent; and (iii) at least one selected from fluoride reducing agents and hydroxide reducing agent. The method comprises steps of: (i) preparing a base plate; (ii) forming a resist film on the base plate; and (iii) contacting the base plate with a resist removing composition containing an alkoxy N-hydroxyalkyl alkane amide, at least one compound selected from the group consisting of alkanol amine, a polar substance having a dipole moment of not less than 3 and a damage-proofing agent and at least one selected from fluoride reducing agents and hydroxide reducing agent or a resist removing composition containing an alkoxy N-hydroxyalkyl alkane amide, at least one compound selected from the group consisting of alkanol amine, a polar substance having a dipole moment of not less than 3 and a damage-proofing agent and hydrogen peroxide.

Abstract translation: 目的：提供抗蚀剂去除组合物，其优异地除去有机聚合物和金属氧化物以及抗蚀剂，并且不会损坏下部膜。 并且还提供了使用其的抗蚀剂去除方法。 构成：抗蚀剂去除组合物包含：（i）烷氧基N-羟烷基烷烃酰胺; （ii）至少一种选自链烷醇胺，偶极矩不小于3的极性物质和防损害剂的化合物; 和（iii）选自氟化还原剂和氢氧化物还原剂中的至少一种。 该方法包括以下步骤：（i）制备底板; （ii）在基板上形成抗蚀剂膜; 和（iii）使基板与含有烷氧基N-羟烷基烷烃酰胺，至少一种选自烷醇胺，偶极矩不小于3的极性物质和至少一种损伤 选自氟化还原剂和氢氧化物还原剂中的至少一种或含有烷氧基N-羟基烷基烷酰胺的抗蚀剂除去组合物，至少一种选自烷醇胺，极偶极偶极 不小于3，防破坏剂和过氧化氢。

公开(公告)号：KR1020000016878A

公开(公告)日：2000-03-25

申请号：KR1019990020973

申请日：1999-06-07

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  황진호 ,  길준잉 ,  박제응 ,  전상문

IPC: C07C215/02

CPC classification number: G03F7/425

Abstract: PURPOSE: A resist remover or a resist removing composition is provided to effectively remove a resist as well as polymer and organometallic polymers. CONSTITUTION: The resist remover comprising alkoxy N-hydroxyalkyl alkanee amide, the amide being represented by the formula 1:£Formula 1|R4-O-R3-CO-N-R1-R2-OH wherein R1 is a hydrogen atom, a C1-C5 hydrocarbon, or an aromatic hydrocarbon having one to three aromatic ring structures; R2 is a C1-C5 hydrocarbon or an aromatic hydrocarbon having one to three aromatic ring structures; and R3 and R4 are independently a C1-C5 hydrocarbon. Particularly, in the formula 1, R1 is H; R2 is -CH2CH2-; R3 is -CH2CH2-; and R4 is -CH3.

Abstract translation: 目的：提供抗蚀剂去除剂或抗蚀剂去除组合物以有效地除去抗蚀剂以及聚合物和有机金属聚合物。 构成：包含烷氧基N-羟烷基烷烃酰胺的抗蚀剂去除剂，酰胺由式1表示：式1 | R4-O-R3-CO-N-R1-R2-OH其中R1是氢原子，C1 -C 5烃基或具有一至三个芳族环结构的芳烃; R2是C1-C5烃或具有一至三个芳环结构的芳烃; 且R 3和R 4独立地为C 1 -C 5烃。 特别地，在式1中，R 1为H; R2是-CH2CH2-; R3是-CH2CH2-; R4为-CH3。