Abstract:
PURPOSE: A spot size converter, a fabricating method thereof, and a spot size converter IC are provided to enhance the optical coupling efficiency by coupling easily an optical fiber to an optical detection device. CONSTITUTION: A spot size converter includes a semiconductor substrate, a first waveguide, and a second waveguide. The first waveguide(32) is laminated on the semiconductor substrate(31) in order to form a shape of ridge. The first waveguide is coupled to an optical fiber. The second waveguide(33) is formed on the first waveguide. The second waveguide has a tapering structure. The width of the second waveguide is increased to the second waveguide. A starting part of the second waveguide is formed with a mesa structure or an inverse mesa structure.
Abstract:
PURPOSE: A semiconductor laser device and a method of manufacturing the same are provided to obtain high optical coupling efficiency without deterioration of optical characteristics. CONSTITUTION: A semiconductor laser device includes an active waveguide(100a), a passive waveguide(100b) and a plurality of clad layers(130,155,160). The active waveguide(100a) is formed on the predetermined portion of the substrate(110). The passive waveguide(100b) is provided with a core layer(145). Each of the clad layers(130,155,160) is formed on the active waveguide(100a) and the passive waveguide(100b). And, a pair of separated confinement heterostructure(SCH) layers(115,125) are formed on top and below the core layer(120) of the active waveguide(100a).
Abstract:
The present invention relates to an electro-absorption modulator laser. The present invention includes a single wavelength laser which includes a first multiple quantum well, has a ridge structure, and outputs an optical signal; an electro-absorption modulator which includes a second multiple quantum well, has a ridge structure, and modulates the optical signal outputted from the single wavelength laser; and a mode converter which changes the mode size of the optical signal modulated by the electro-absorption modulator and has a ridge structure. The single wavelength laser and the electro-absorption modulator are butt-combined.
Abstract:
PURPOSE: The direct coupling type wavelength varying external resonator laser is provided to a working speed by controlling an optical power capable of making the high speed operation. CONSTITUTION: The wavelength varying external resonator laser (1000) comprises a gain medium (500), an optical waveguide structure (400), and the high frequency transmission media (600). The gain medium generates the optical signal according to an approved bias current. The optical waveguide structure comprises a mirror surface by combining with the gain medium, generates lasing inside the mirror facet when the approved bias current is over a threshold value. The high frequency transmission media comprises a dielectric body (610), a metallic thin film wire (620), and a matching resistance unit (630). The dielectric body controls the working speed of the optical signal by adding the high frequency signal in the approved bias current. The metallic thin film wire comprises a transmission line by combining with the dielectric body. The matching resistance unit performs a signal matching function by adding the resistance value of the gain medium.
Abstract:
PURPOSE: An apparatus for generating a wavelength tunable external cavity laser is provided to perform high speed modulation by integrating a light amplifier, a reflective multimode intervening machine, and light modulator on one substrate into a successive waveguide form. CONSTITUTION: A light amplifier(130), a reflective multimode intervening device(140), and a light signal processor(150) are offered on a first substrate(110). The light amplifier, the reflective multimode intervening device, and the light signal processor form a successive wave guide. An external wavelength tunable reflector(220) is offered on a second substrate(210). The external wavelength tunable reflector reflects light corresponding to a specific wave from lights which enter. A mode intervening device reflects some of incident lights. The mode intervening device transmits the rest light of the incident lights. The light amplifier is installed between the external wavelength tunable reflector and the reflective multimode intervening device.
Abstract:
반사형 반도체 광 증폭기가 제공된다. 상기 반사형 반도체 광 증폭기는 외부로부터 입사되는 하향 광신호가 이득을 가지도록 동작하는 신호 증폭 영역과, 상기 신호 증폭 영역과 연결되고 변조된 레이저 신호를 발생하는 신호 변조 영역을 포함한다. 상기 하향 광신호는 상기 변조된 레이저 신호에 의한 교차이득 변조를 통해 증폭되어 상향 광신호로서 출력된다. 상기 레이저 신호의 파장 대역은 상기 하향 광신호와는 다른 파장 대역을 갖고, 상기 증폭의 이득 대역에 포함된다. 광 증폭기, 레이저, 변조, 교차이득
Abstract:
PURPOSE: A multi-wavelength laser diode, a multi-wavelength laser diode module, and a wavelength division multiplexing optical communication system are provided to make the output wavelength of a multi-wavelength laser diode be identical to the external reference wavelength of the multi-wavelength laser diode. CONSTITUTION: First light amplifiers(110) generate and amplify first to nth wavelength signals, and a second wavelength amplifier(120) generates and amplifies a monitor wavelength signal. A wavelength selector(150) selects and outputs the amplified monitor wavelength signal and the amplified first to nth wavelength signals. An optical detector(140) detects the reflection wavelength signal of the monitor wavelength signal outputted from the wavelength selector.