公开(公告)号：US20150214449A1

公开(公告)日：2015-07-30

申请号：US14679066

申请日：2015-04-06

Applicant: Epistar Corporation

Inventor： Cheng-Nan HAN ,  Tsung-Xian LEE ,  Min-Hsun HSIEH ,  Hung-Hsuan CHEN ,  Hsin-Mao LIU ,  Hsing-Chao CHEN ,  Ching-San TAO ,  Chih-Peng NI ,  Tzer- Perng CHEN ,  Jen-Chau WU

IPC: H01L33/58 ,  H01L33/44 ,  H01L33/62 ,  H01L33/38 ,  H01L33/46

CPC classification number: H01L33/58 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L2933/0016

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract translation: 本公开公开了一种光电元件，包括：光电单元，包括第一金属层，第二金属层和最外侧表面; 绝缘层，其具有与光电单元重叠并延伸超过侧表面的第一部分，以及在横截面视图中与第一部分分离的第二部分; 以及形成在所述绝缘层上的第一导电层。

公开(公告)号：US20150123151A1

公开(公告)日：2015-05-07

申请号：US14594761

申请日：2015-01-12

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH ,  Kuen-Ru CHUANG ,  Shu-Wen SUNG ,  Chia-Cheng LIU ,  Chao-Nien HUANG ,  Shane-Shyan WEY ,  Chih-Chiang LU ,  Ming-Jiunn JOU

IPC: H01L33/16 ,  H01L33/42

CPC classification number: H01L33/16 ,  H01L21/2007 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42

Abstract: A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.

Abstract translation: 发光结构包括透明基板; 形成在所述透明基板上并且具有与所述第一顶表面基本上共面的第一顶表面和第二顶表面的第一透明导电层; 形成在所述第一顶表面上的第一发光叠层; 以及直接形成在第二顶面上的第一电极。

公开(公告)号：US20140225133A1

公开(公告)日：2014-08-14

申请号：US14174233

申请日：2014-02-06

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH

IPC: H01L33/48 ,  H01L25/075 ,  H01L33/64

CPC classification number: H01L33/483 ,  H01L24/97 ,  H01L33/58 ,  H01L33/64 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2933/0033

Abstract: The present disclosure provides a method for forming a light-emitting device and a light-emitting device formed thereby. The method comprises the steps of providing a transparent substrate, forming multiple pairs of electrode pins on the transparent substrate wherein each pair of electrode pins comprises two electrode pins, providing multiple LED dies on the transparent substrate wherein each LED die comprises two electrodes, providing multiple pairs of metal wires wherein each pair of metal wires comprises two metal wires correspondingly connecting the two electrodes of each LED die with the two electrode pins of each pair of electrode pins, and cutting the transparent substrate to form multiple light-emitting devices.

Abstract translation: 本公开提供了一种形成发光器件的方法和由此形成的发光器件。 该方法包括以下步骤：提供透明基板，在透明基板上形成多对电极引脚，其中每对电极引脚包括两个电极引脚，在透明基板上提供多个LED管芯，其中每个LED管芯包括两个电极， 金属线对，其中每对金属线包括将每个LED管芯的两个电极与每对电极引脚的两个电极引脚对应地连接的两根金属线，并切割透明基板以形成多个发光器件。

公开(公告)号：US20140096901A1

公开(公告)日：2014-04-10

申请号：US14100999

申请日：2013-12-09

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Chih-Chiang LU ,  Ching-Pu TAI

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/42 ,  H05B33/26 ,  Y10T29/49995 ,  Y10T156/1062

Abstract: A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6.

Abstract translation: 发光装置包括透明基板，透明基板上的透明粘合剂层，透明粘合剂层上的第一透明导电层，透明导电层上的多层外延结构和第一电极，以及第二电极 在多层外延结构上。 多层外延结构包括发光层。 透明基板具有与透明粘合剂层相对的第一表面和与第一表面相对的第二表面，其中第二表面的面积大于发光层的面积，面积比不小于1.6 。

公开(公告)号：US20130221395A1

公开(公告)日：2013-08-29

申请号：US13758238

申请日：2013-02-04

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Chien-Yuan WANG ,  Jin-Ywan LIN ,  Chiu-Lin YAO

IPC: H01L33/42

CPC classification number: H01L33/42 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.

Abstract translation: 光电子器件包括半导体叠层层; 位于半导体堆叠层上的第一透明导电氧化物（以下简称为“TCO”）层，其中第一TCO层具有至少一个开口; 以及覆盖所述第一TCO层的第二TCO层，其中所述第二TCO层填充到所述第一TCO层的开口中并与所述半导体堆叠层接触，并且所述第一TCO层和所述第二TCO层中的一个形成欧姆接触 与半导体堆叠层。

公开(公告)号：US20130115725A1

公开(公告)日：2013-05-09

申请号：US13730130

申请日：2012-12-28

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH ,  Kuen-Ru CHUANG ,  Shu-Wen SUNG ,  Chia-Cheng LIU ,  Chao-Nien HUANG ,  Shane-Shyan Wey ,  Chih-Chiang Lu ,  Ming-Jiunn Jou

IPC: H01L33/02

CPC classification number: H01L33/16 ,  H01L21/2007 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42

Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.

Abstract translation: 一种具有透明基板的发光二极管及其制造方法。 发光二极管通过产生两个半导体多层并结合而形成。 第一半导体多层形成在非透明基板上。 通过在透明基板上形成非晶界面层来形成第二半导体多层。 将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

公开(公告)号：US20250006864A1

公开(公告)日：2025-01-02

申请号：US18756777

申请日：2024-06-27

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shih-Chang LEE ,  Wei-Chu LIAO ,  Mei-Chun LIU ,  Hui-Ching FENG ,  Zhen-Kai KAO ,  Yih-Hua RENN ,  Min-Hsun HSIEH

IPC: H01L33/30 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an epitaxial structure, a first contact electrode and a second contact electrode. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure and an active region. The first semiconductor structure includes a first semiconductor contact layer. The second semiconductor structure includes a second semiconductor contact layer. The active region is located between the first semiconductor structure and the second semiconductor structure. The first contact electrode is located on the second semiconductor contact layer and directly contacts the first semiconductor contact layer. The second contact electrode is located on the second semiconductor contact layer and directly contacts the second semiconductor contact layer. The first semiconductor contact layer has a conductivity type of n-type and includes a first group III-V semiconductor material. The second semiconductor contact layer has a conductivity type of p-type and includes a second group III-V semiconductor material.

公开(公告)号：US20230335695A1

公开(公告)日：2023-10-19

申请号：US18338815

申请日：2023-06-21

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Hsin-Mao LIU ,  Ying-Yang SU

IPC: H01L33/58 ,  H01L25/075 ,  H01L33/50 ,  H01L27/15 ,  H01L33/60

CPC classification number: H01L33/58 ,  H01L25/0753 ,  H01L33/505 ,  H01L27/156 ,  H01L33/60 ,  H01L24/29

Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2-150.

公开(公告)号：US20230274962A1

公开(公告)日：2023-08-31

申请号：US18143413

申请日：2023-05-04

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  De-Shan KUO ,  Chang-Lin LEE ,  Jhih-Yong YANG

IPC: H01L21/677 ,  H01L33/00 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/67721 ,  H01L21/67144 ,  H01L21/67288 ,  H01L21/6773 ,  H01L21/6836 ,  H01L33/0075 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68368

Abstract: A chip transferring method includes providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion chips from the first load-bearing structure; dividing the first portion chips into a plurality of blocks according to the photoelectric characteristic values, and each of the plurality of blocks comprising multiple chips of the first portion chips; and transferring the multiple chips of one of the plurality of blocks to a second load-bearing structure.

公开(公告)号：US20230187597A1

公开(公告)日：2023-06-15

申请号：US18164629

申请日：2023-02-06

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L2933/0066 ,  H01L2933/0033

Abstract: This disclosure discloses a method of manufacturing a light-emitting device includes steps of providing a first substrate with a plurality of first light-emitting elements and adhesive units arranged thereon, providing a second substrate with a first group of second light-emitting elements and a second group of second light-emitting elements arranged thereon, and connecting the a second group of second light-emitting elements and the adhesive units. The first light-emitting elements and the first group of second light-emitting elements arc partially or wholly overlapped with each other during connecting the second group of second light-emitting elements and the adhesive units.