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公开(公告)号：KR101058369B1
公开(公告)日：2011-08-22
申请号：KR1020070127565
申请日：2007-12-10
Applicant: 한국전자통신연구원
CPC classification number: G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
Abstract: 본 발명은 나노점을 이용한 바이오 센서 및 그 제조 방법에 관한 것으로, 감지하고자 하는 타겟분자에 전하로 대전된 나노점을 결합하여 실리콘 나노선의 전기전도도가 쉽게 변화되도록 함으로써, 우수한 민감도를 갖는 바이오 센서를 저렴한 비용으로 제조할 수 있는 것을 특징으로 한다.
실리콘 나노선, 바이오 센서, 전계효과 트랜지스터, 나노점-
公开(公告)号：KR101026468B1
公开(公告)日：2011-04-01
申请号：KR1020080089237
申请日：2008-09-10
Applicant: 한국전자통신연구원
CPC classification number: G01N33/54373 , B01L3/502761 , B01L2200/143 , B01L2300/0636 , B01L2300/0645 , B01L2300/0867 , B01L2300/163 , B01L2400/0415 , G01N27/4145
Abstract: FET를 이용한 생분자 검출 장치 및 검출 방법이 제공된다. 생분자 검출 장치는 기판, 상기 기판에 서로 이격되어 배치된 소오스 및 드레인 전극, 소오스 및 드레인 전극 사이의 채널 영역 및 채널 영역에 고정된 프로브 분자를 포함하는 FET, 프로브 분자가 고정된 FET의 채널 영역으로, 저이온 농도의 기준 버퍼 용액 및 타겟 분자를 포함하는 고이온 농도의 반응 용액을 선택적으로 공급하는 미세 유체 공급부 및 프로브 분자가 고정된 FET의 채널 영역에서의 제 1 전류 값과, 고이온 농도의 반응 용액에서 결합된 프로브 분자와 타겟 분자가 고정된 FET의 채널 영역에서의 제 2 전류 값을 측정하여 타겟 분자를 검출하는 생분자 검출부를 포함한다.
생분자, 이온 세기, 반응 용액, 기준 버퍼 용액, 안정화 버퍼, 전계 효과 트랜지스터-
公开(公告)号：KR1020110032172A
公开(公告)日：2011-03-30
申请号：KR1020090089537
申请日：2009-09-22
Applicant: 한국전자통신연구원
IPC: G01N27/416 , G01N27/414 , G01N33/48
CPC classification number: G01N27/4145
Abstract: PURPOSE: A biosensor and a driving method thereof are provided to remarkably improve sensitivity and reaction velocity by forming a probe molecule on a reference electrode. CONSTITUTION: A biosensor comprises a transistor, a fluid pipe(250), a reference electrode(260), and a probe molecular layer(320). The transistor has a substrate(200), a gate insulator film(217), and a source/drain electrode(215). The substrate has a channel formed in a source, a drain, and a gap between the source and the drain. The gate insulator film is formed on the channel. The source/drain electrode is connected to the source and the drain. The fluid pipe covers the transistor and moves a sample solution with target molecules. The reference electrode is formed in the inner wall of the fluid pipe. The probe molecule layer is attached on the top of the reference electrode and reacts with the target molecules.
Abstract translation: 目的：提供生物传感器及其驱动方法，通过在参比电极上形成探针分子来显着提高灵敏度和反应速度。 构成：生物传感器包括晶体管，流体管（250），参比电极（260）和探针分子层（320）。 晶体管具有基板（200），栅极绝缘膜（217）和源极/漏极（215）。 衬底具有形成在源极，漏极和源极和漏极之间的间隙的沟道。 栅极绝缘膜形成在沟道上。 源极/漏极连接到源极和漏极。 流体管覆盖晶体管并移动具有目标分子的样品溶液。 参考电极形成在流体管的内壁中。 探针分子层附着在参比电极的顶部并与目标分子反应。
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公开(公告)号：KR1020100072533A
公开(公告)日：2010-07-01
申请号：KR1020080130964
申请日：2008-12-22
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A biosensor chip is provided to reduce the manufacturing cost of the biosensor chip compared to a conventional biosensor chip and to easily utilize the small sized biosensor chip. CONSTITUTION: A biosensor chip comprises the following: a sensing unit(150) detecting a target material by the mutual reaction between the target material and a sensing material; a circuit board unit electrically connected with the sensing unit; a channel unit(140) supplying a fluidic material containing the target material to the sensing unit; and a cover(120) covering the channel unit and the sensing unit, while being connected with the circuit board unit. The cover includes a solution inlet(124) and a solution outlet(125) for the fluidic material.
Abstract translation: 目的：提供生物传感器芯片，以降低生物传感器芯片的制造成本，与传统的生物传感器芯片相比，并且易于利用小型生物传感器芯片。 构成：生物传感器芯片包括：感测单元（150），通过目标材料和感测材料之间的相互反应检测目标材料; 与感测单元电连接的电路板单元; 通道单元（140），将含有所述目标材料的流体材料供应到所述感测单元; 以及在与电路板单元连接的同时覆盖通道单元和感测单元的盖（120）。 盖子包括用于流体材料的溶液入口（124）和溶液出口（125）。
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公开(公告)号：KR100912111B1
公开(公告)日：2009-08-13
申请号：KR1020070100558
申请日：2007-10-05
Applicant: 한국전자통신연구원
IPC: H01L27/098 , H01L27/095 , B82Y40/00
CPC classification number: H01L29/0673
Abstract: 본 발명은 소스 및 드레인 전극이 금속실리사이드로 구성되고, 나노선을 채널로 이용하는 쇼트키 장벽 나노선 전계 효과 트랜지스터(Schottky Barrier Nano Wire Field Effect Transistor) 및 그 제조방법에 관한 것으로, 이를 위해 본 발명은 기판에서 부양되어(suspended) 나노선으로 형성된 채널; 상기 채널의 양끝단과 전기적으로 연결되어 상기 기판 상부에 금속실리사이드로 형성된 소스 및 드레인 전극; 상기 채널을 둘러싸는 형태로 마련된 게이트전극 및 상기 채널과 게이트전극 사이에 형성된 게이트절연막을 포함하는 쇼트키 장벽 나노선 전계 효과 트랜지스터를 제공한다.
나노선, 탄소나노튜브, 금속실리사이드, 트랜지스터, 쇼트키 장벽-
Patent Agency Ranking
公开(公告)号：KR1020090065272A
公开(公告)日：2009-06-22
申请号：KR1020070132758
申请日：2007-12-17
Applicant: 한국전자통신연구원
CPC classification number: G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963 , G01N33/48 , G01N23/00
Abstract: A biosensor is provided to lower operation current in sensing part of biomass lowering contact resistance between silicon nanowire and metal electrode. A biosensor comprises a silicon plate(200), source area(210), drain area(220), insulating layer(230) and silicon nano wire(240). The source area and drain area is arranged on the silicon plate. The insulating layer is arranged between source area and drain area. The silicon nano wire comprises defect area(241) and is arranged on the source area and drain area. A method for manufacturing the biosensor comprises: a step of preparing the silicon plate; a step of forming source area and drain area on the silicon plate; a step of arranging the silicon nano wire on the source area and drain area; and a step of irradiating electronic beam in one area of the silicon nano wire to form the defect area.
Abstract translation: 提供生物传感器来降低操作电流，以感测部分生物质降低硅纳米线与金属电极之间的接触电阻。 生物传感器包括硅板（200），源区（210），漏区（220），绝缘层（230）和硅纳米线（240）。 源极区域和漏极区域布置在硅板上。 绝缘层布置在源区和漏区之间。 硅纳米线包括缺陷区（241），并且布置在源区和漏区上。 制造所述生物传感器的方法包括：制备所述硅板的步骤; 在硅板上形成源区和漏区的步骤; 将硅纳米线布置在源极区域和漏极区域上的步骤; 以及在硅纳米线的一个区域中照射电子束以形成缺陷区域的步骤。
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公开(公告)号：KR1020090062373A
公开(公告)日：2009-06-17
申请号：KR1020070129581
申请日：2007-12-13
Applicant: 한국전자통신연구원
IPC: H01L21/336 , H01L29/78
CPC classification number: G01N27/4145 , H01L29/66818 , H01L29/7853
Abstract: A high sensitive sensor and a manufacturing method thereof are provided to obtain a high signal by controlling depletion and accumulation of a channel by combining a target material and a sensing material in both sides. An SOI(Silicon On Insulator) substrate is formed in an upper part of a semiconductor substrate. A mask pattern is formed by performing a lithography process in the upper part of the SOI substrate. The structure of a pin shape is formed by etching a silicon layer in the upper part of the SOI substrate. The sensor structure with a pin shaped structure is formed on the semiconductor substrate. A metal electrode is deposited by implanting the ion for electrical ohmic contact to the sensor structure. A sensing material combined in a target material is fixed in both sidewalls of the pin shaped structure. The path for penetrating the target material through the pin-shaped structure is formed on the sensor structure.
Abstract translation: 提供了一种高灵敏度传感器及其制造方法，以通过在两侧组合目标材料和感测材料来控制通道的耗尽和累积来获得高信号。 在半导体衬底的上部形成SOI（绝缘体上硅）衬底。 通过在SOI衬底的上部进行光刻工艺来形成掩模图案。 针状结构通过在SOI衬底的上部蚀刻硅层而形成。 具有针状结构的传感器结构形成在半导体衬底上。 通过将用于电欧姆接触的离子注入传感器结构来沉积金属电极。 组合在目标材料中的感测材料固定在销形结构的两个侧壁中。 在传感器结构上形成穿过针状结构穿透目标材料的路径。
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公开(公告)号：KR1020090058883A
公开(公告)日：2009-06-10
申请号：KR1020070125679
申请日：2007-12-05
Applicant: 한국전자통신연구원
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
Abstract: A semiconductor nano wire sensor and a manufacturing method thereof are provided to implement a silicon nano wire channel of a line width with several nano meters by using a photolithographic process. A first conductive single crystal silicon line pattern is formed in the uppermost layer of an SOI(Silicon On Insulator) substrate. A second conductive channel(216b) is formed in both ends of the line width direction of the first conductive single crystal silicon line pattern. The second conductive pad is formed in both sides of the longitudinal direction of the first conductive single crystal silicon line pattern. A first electrode(242) for applying a reverse bias voltage is formed in an undoped region of the first conductive single crystal silicon line pattern. A second electrode(232) for applying the bias voltage to both sides of the second conductive channel is formed on the second conductive pad.
Abstract translation: 提供半导体纳米线传感器及其制造方法，通过使用光刻工艺来实现具有数纳米的线宽的硅纳米线通道。 在SOI（绝缘体上硅）衬底的最上层形成第一导电单晶硅线图形。 第二导电沟道（216b）形成在第一导电单晶硅线图案的线宽方向的两端。 第二导电焊盘形成在第一导电单晶硅线图案的纵向方向的两侧。 在第一导电单晶硅线图案的未掺杂区域中形成用于施加反向偏置电压的第一电极（242）。 在第二导电焊盘上形成用于将偏置电压施加到第二导电沟道两侧的第二电极（232）。
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公开(公告)号：KR100864871B1
公开(公告)日：2008-10-22
申请号：KR1020070051780
申请日：2007-05-29
Applicant: 한국전자통신연구원
IPC: H01L29/78 , H01L29/772
CPC classification number: H01L21/28229 , H01L21/28079 , H01L29/495 , H01L29/513 , H01L29/517 , H01L29/6659 , H01L29/7833
Abstract: A method for manufacturing a semiconductor device is provided to obtain a high dielectric gate oxide by using an interface reaction between an oxide layer and a metal layer. An oxide layer(20) is formed on a silicon substrate(10). A metal layer(30) is deposited on the oxide layer. A metal silicate layer(40) is formed between the oxide layer and the metal layer by using an interface reaction between the oxide layer and the metal layer. A metal gate is formed by etching the metal silicate layer and the metal layer. An LDD(Lightly Doped Drain) region and source/drain electrodes are formed on the silicon substrate. The interface reaction is induced by performing a thermal process after the metal layer is deposited on the oxide layer or by using kinetic energy caused by a deposition process of the metal layer on the oxide layer.
Abstract translation: 提供一种制造半导体器件的方法，以通过使用氧化物层和金属层之间的界面反应来获得高电介质栅极氧化物。 在硅衬底（10）上形成氧化物层（20）。 金属层（30）沉积在氧化物层上。 通过使用氧化物层和金属层之间的界面反应，在氧化物层和金属层之间形成金属硅酸盐层（40）。 通过蚀刻金属硅酸盐层和金属层形成金属栅极。 在硅衬底上形成LDD（轻掺杂漏极）区域和源/漏电极。 在金属层沉积在氧化物层上之后或通过使用由氧化物层上的金属层的沉积工艺引起的动能，通过进行热处理来诱导界面反应。
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公开(公告)号：KR1020080051030A
公开(公告)日：2008-06-10
申请号：KR1020070100558
申请日：2007-10-05
Applicant: 한국전자통신연구원
IPC: H01L27/098 , H01L27/095 , B82Y40/00
CPC classification number: H01L29/0673
Abstract: A schottky barrier nano-wire field effect transistor and a manufacturing method thereof are provided to secure thermal stability by forming a source/drain electrode using metal silicide when the source/drain electrode is jointed to a nano-wire. A channel(140) made of nano-wire is formed on a substrate(100). A source/drain electrode(150) made of metal silicide is formed on the upper surface of a substrate, and is electrically connected to both ends of the channel. A gate electrode(170) is formed to enclose the channel, and a gate insulating layer(160) is formed between the channel and the gate electrode. The nano-wire is made of any one selected from a group consisting of ZnO, V2O5, GaN and AlN.
Abstract translation: 提供肖特基势垒纳米线场效应晶体管及其制造方法，用于通过在源/漏电极连接到纳米线时通过使用金属硅化物形成源极/漏极来确保热稳定性。 在衬底（100）上形成由纳米线制成的通道（140）。 由金属硅化物制成的源极/漏极（150）形成在衬底的上表面上，并且电连接到沟道的两端。 形成栅电极（170）以包围沟道，并且在沟道和栅电极之间形成栅极绝缘层（160）。 纳米线由选自ZnO，V2O5，GaN和AlN的任何一种制成。
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