公开(公告)号：DE69618627T2

公开(公告)日：2002-09-12

申请号：DE69618627

申请日：1996-03-13

Applicant: IBM

Inventor： BINNIG KARL ,  BRUGGER JUERGEN ,  HAEBERLE WALTER ,  ROHRER HEINRICH ,  VETTIGER PETER

IPC: G01B21/30 ,  G01B5/28 ,  G01B7/34 ,  G01N37/00 ,  G01Q60/32 ,  G01Q70/10 ,  G11B9/00 ,  G11B9/14 ,  G12B1/00

公开(公告)号：DE69618627D1

公开(公告)日：2002-02-21

申请号：DE69618627

申请日：1996-03-13

Applicant: IBM

Inventor： BINNIG KARL ,  BRUGGER JUERGEN ,  HAEBERLE WALTER ,  ROHRER HEINRICH ,  VETTIGER PETER

IPC: G01B21/30 ,  G01B5/28 ,  G01B7/34 ,  G01N37/00 ,  G01Q60/32 ,  G01Q70/10 ,  G11B9/00 ,  G11B9/14 ,  G12B1/00

公开(公告)号：DE69009474T2

公开(公告)日：1994-12-01

申请号：DE69009474

申请日：1990-09-14

Applicant: IBM

Inventor： BUCHMANN PETER ,  WEBB DAVID J ,  VETTIGER PETER

IPC: H01L21/308 ,  H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S3/025 ,  H01L33/00

Abstract: A method of passivating etched mirror facets of semiconductor laser diodes for enhancing device reliability. The etched mirror facet is first subjected to a wet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror.

公开(公告)号：CA2065980A1

公开(公告)日：1992-11-04

申请号：CA2065980

申请日：1992-04-14

Applicant: IBM

Inventor： BUCHMANN PETER L ,  UNGER PETER ,  VETTIGER PETER ,  VOEGELI OTTO

IPC: G12B15/06 ,  H01L23/34 ,  H01L23/433 ,  H01L31/024 ,  H01L33/48 ,  H01L33/64 ,  H01S5/024 ,  H01L23/42 ,  H01L21/50 ,  H01L21/60

Abstract: SZ9-90-016 COOLING STRUCTURES AND PACKAGE MODULES FOR SEMICONDUCTORS Cooling structure for direct heat transfer between an active layer of a chip in which electric elements are formed and a heat sink. The inventive cooling structure consists of a current/voltage supply level with metal structures and insulation spacers and/or layers, partly covered by an insulation layer and followed by a heat transfer structure. A heat transfer bridge in thermal connection to the heat transfer structure provides for heat flux between the inventive cooling structure and the heat sink.

公开(公告)号：DE3685495D1

公开(公告)日：1992-07-02

申请号：DE3685495

申请日：1986-07-11

Applicant: IBM

Inventor： GRAF VOLKER ,  MOHR THEODOR OSKAR ,  BUCHMANN PETER LEO ,  VETTIGER PETER ,  HOH PETER DAVID

IPC: H01L21/033 ,  H01L21/285 ,  H01L21/311 ,  H01L21/318 ,  H01L21/336 ,  H01L21/338 ,  H01L29/812 ,  H01L21/00 ,  H01L21/28

Abstract: Undercut mask profiles are formed in a semiconductor process by depositing a first plasma CVD nitride layer followed by a second plasma CVD nitride layer at a different excitation frequency, so that the two layer have different etch rates; and patterning and etching the double layer structure to form the desired undercut profile. Method is simple and easy to control and the undercut profile has good temp. stability. The nitride layer are SiNx, SiOxNy or BNx. The gas compsn. for each CVD stage is different, pref. NH3, N2 and SiH4 for the first stage; and N2 and SiH4 for the second stage. The RF frequency is 1-50 MH2 for the first stage and below 100 MHz for the second stage.

公开(公告)号：BR8700836A

公开(公告)日：1987-12-22

申请号：BR8700836

申请日：1987-02-23

Applicant: IBM

Inventor： BUCHMANN PETER LEO ,  VETTIGER PETER ,  ZEGHBROECK BART JOZEF VAN

IPC: H01L21/30 ,  G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/70

Abstract: A process for forming sidewalls for use in the fabrication of semiconductor structures, where the thin, vertical sidewalls are "image transferred" to define sub-micron lateral dimensions.First, a patterned resist profile (13A, 13B) with substantially vertical edges is formed on a substrate (11, 12) on which the sidewalls are to be created. Then, the profile is soaked in a reactive organometallic silylation agent to silylate the top and the vertical edges of the resist to a predetermined depth, thereby rendering the profile surfaces (15S, 15T) highly oxygen etch resistant. In a subsequent anisotropic RIE process, the top (15T) of the profile and the unsilylated resist are removed, leaving the silylated vertical edges (15S), that provide the desired free-standing sidewalls, essen­tially unaffected.

公开(公告)号：IT1165437B

公开(公告)日：1987-04-22

申请号：IT2813579

申请日：1979-12-18

Applicant: IBM

Inventor： BAPST URS HEINRICH ,  GFELLER FRITZ ,  VETTIGER PETER

IPC: G01J1/42 ,  G01J1/44 ,  G02F2/00 ,  G02F2/02 ,  G06K7/10 ,  H04B10/114 ,  H04B

Abstract: An arrangement for separating disturbing ambient light from an optical data signal, comprising an interference filter (1), the passband of which matches the wavelength of the optical data signal, and further comprising two photodiodes which are so arranged that one photodiode receives the light (IS, IAT) transmitted through the interference filter, and that the other receives the reflected light (IAR). Adjusting means, e.g., in the form of a settable aperture (4) or an additional simple filter (5) are provided for adjusting the transmitted and reflected portions of the ambient light to each other. Output signal (S1, S2) of both photodiodes are subtracted from each other in compensation circuitry (6). This results in compensation of the ambient light components so that at the output a signal (SR) is available which depends only on the actual data signal (IS).

公开(公告)号：CH604453A5

公开(公告)日：1978-09-15

申请号：CH814476

申请日：1976-06-25

Applicant: IBM

Inventor： SCHINDLER HANS DR ,  VETTIGER PETER

IPC: H04M3/02 ,  H04M3/22 ,  H04M19/02 ,  H04Q1/22

Abstract: In an extension line circuit, an off-hook condition is detected during ringing by superimposing in each ringing cycle the values of the line current existing at two sampling instants exactly one-half cycle apart, and testing whether the sum (or mean value) exceeds a given threshold. When DC current starts flowing due to the set going off-hook, the mean value of the two values will pass a threshold.

公开(公告)号：DE2727731A1

公开(公告)日：1977-12-29

申请号：DE2727731

申请日：1977-06-21

Applicant: IBM

Inventor： SCHINDLER HANS RUDOLF ,  VETTIGER PETER

IPC: H04M3/02 ,  H04M3/22 ,  H04M19/02 ,  H04Q3/24 ,  H04M3/06

Abstract: In an extension line circuit, an off-hook condition is detected during ringing by superimposing in each ringing cycle the values of the line current existing at two sampling instants exactly one-half cycle apart, and testing whether the sum (or mean value) exceeds a given threshold. When DC current starts flowing due to the set going off-hook, the mean value of the two values will pass a threshold.

公开(公告)号：DE2649024A1

公开(公告)日：1977-09-08

申请号：DE2649024

申请日：1976-10-28

Applicant: IBM

Inventor： SCHINDLER HANS RUDOLF ,  VETTIGER PETER

IPC: H04B3/03 ,  H04B1/58 ,  H04M19/00 ,  H04Q3/24

Abstract: This invention comprises a telephone hybrid circuit having two opto-coupler arrangements for transferring voice signals from the two-wire line to a port of the switching system on one hand and from a port of the switching system to the two-wire line on the other hand. In addition, a pair of feeder circuits in the form of current sources comprising active elements are provided for feeding a constant positive direct current to one wire of the two-wire line and a negative direct current of equal magnitude to the other wire of the two-wire line. Each of the current sources includes control circuitry for maintaining a constant ratio between the current furnished by the current source and a control current common to both current sources. A control current path is connected to the output of one of the opto-coupler arrangements for generating a common control current in response to a dc signal and a superimposed voice signal received from a port of the switching system. The other opto-coupler arrangement couples the signals from the two-wire line to a port of the switching system.