公开(公告)号：DE10047152B4

公开(公告)日：2006-07-06

申请号：DE10047152

申请日：2000-09-22

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  PFIRSCH FRANK ,  SCHMIDT GERHARD ,  BARTHELMES REINER

IPC: H01L21/322 ,  H01L29/861 ,  H01L21/329 ,  H01L29/06 ,  H01L29/40 ,  H01L29/868

公开(公告)号：DE10031461B4

公开(公告)日：2006-06-29

申请号：DE10031461

申请日：2000-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  PORST ALFRED

IPC: H01L29/861 ,  H01L29/32

Abstract: A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1x10 17 to 3x10 18 dopant atoms per cm 3 for the anode emitter, especially on its surface 10 19 dopant atoms per cm 3 or more for the cathode emitter and approximately 10 16 dopant atoms per cm 3 for the blocking function of an anode-side zone.

公开(公告)号：DE102005043913A1

公开(公告)日：2006-04-06

申请号：DE102005043913

申请日：2005-09-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  SCHULZE HOLGER ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/334 ,  H01L21/336

Abstract: A doped semiconductor zone is formed in semiconductor body (100) by introducing dopant particles to side of semiconductor body; irradiating semiconductor body via the one side with further particles in region containing the dopant particles; and carrying out thermal treatment by ways of which the semiconductor body is heated, in the region containing the dopant particles, to less than 700[deg]C to activate the implanted dopant particles.

公开(公告)号：DE10217610B4

公开(公告)日：2005-11-03

申请号：DE10217610

申请日：2002-04-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  STRACK HELMUT ,  TIHANYI JENOE ,  SCHULZE HANS-JOACHIM ,  KAPELS HOLGER

IPC: H01L21/285 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/32 ,  H01L29/45 ,  H01L29/78 ,  H01L21/28

Abstract: Metal-semiconductor contact comprises a metallizing layer (3) forming an ohmic metal-semiconductor contact arranged on a doped semiconductor layer (1). A first doping material is provided for doping of the semiconductor layer so that the electrically active doping concentration in the semiconductor layer is a fraction of the doping concentration in the semiconductor layer. Independent claims are also included for the following: (1) Semiconductor component arranged in a semiconductor body; (2) Integrated circuit containing the semiconductor component; and (3) Process for the production of the metal-semiconductor contact.

公开(公告)号：DE10361136B4

公开(公告)日：2005-10-27

申请号：DE10361136

申请日：2003-12-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  PFIRSCH FRANK ,  FALCK ELMAR ,  LUTZ JOSEF

IPC: H01L29/08 ,  H01L29/739 ,  H01L29/861 ,  H01L29/06

Abstract: Between semiconductor diode (1) anode (2) and cathode (3) is fitted semiconductor volume (7), in which are formed several semiconductor zones (81-4), inversely doped with respect to their direct environment, mutually spaced apart, located near to, but spaced from cathode.Preferably semiconductor volume contains three semiconductor layers (4-6), fitted in this order on cathode. First layer is N+/-doped, second N=doped and third is P-doped, with semiconductor zoned formed within second layer(s). Independent claims are included for IGBT and semiconductor component.

公开(公告)号：DE19835453B4

公开(公告)日：2005-08-18

申请号：DE19835453

申请日：1998-08-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  FELDVOS MARIO

IPC: G01K7/01 ,  H01L23/34 ,  H01L25/16 ,  H01L23/62

公开(公告)号：DE10361696A1

公开(公告)日：2005-08-04

申请号：DE10361696

申请日：2003-12-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHOLZ WOLFGANG ,  ROSSMEIER LUDWIG

IPC: H01L21/50 ,  H01L21/60 ,  H01L23/12 ,  H01L23/16 ,  H01L23/48 ,  H01L23/482 ,  H01L23/495 ,  H01L23/58 ,  H01L25/04 ,  H01L25/065 ,  H01L31/16

Abstract: An integrated semiconductor circuit comprises at least two modules or chips (10,20) spatially adjacent in a common housing (30) with an isolating element for galvanic separation. The isolating element comprises an integrated microprocessed structure. An independent claim is also included for a production process for the above.

公开(公告)号：DE102004007196A1

公开(公告)日：2005-06-30

申请号：DE102004007196

申请日：2004-02-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  PFIRSCH FRANK ,  MAUDER ANTON

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/861 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78

Abstract: An edge closure for a semiconductor element comprises at least one semiconductor member (1) with two electrodes (3,4). A voltage is applied between the electrodes so a charged zone is formed. At least one edge region has a material (9) which is polarised and has a compensating charge for the charged zone. The material has a high dielectric constant and consists of e.g. hafnium oxide, zirconium oxide, titanium oxide or lanthanum oxide. The material is applied onto an insulating layer (12). The edge region has at least one field plate (7).

公开(公告)号：DE10342559B3

公开(公告)日：2005-04-14

申请号：DE10342559

申请日：2003-09-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FALCK ELMAR ,  MAUDER ANTON

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/78 ,  H01L29/739

Abstract: On parts of the insulation layer an electrically conducting layer is deposited, which contacts part of the first region of the second conductivity type. The side wall has concave curvature transitioning into the trench base, where a further trench is arranged. An independent claim is included for the corresponding method of manufacture.

公开(公告)号：DE10324100A1

公开(公告)日：2004-12-23

申请号：DE10324100

申请日：2003-05-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM

IPC: H01L21/22 ,  H01L21/322 ,  H01L21/324 ,  H01L21/329 ,  H01L29/32 ,  H01L21/328 ,  H01L21/321 ,  H01L29/36 ,  H01L29/732 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

Abstract: A production process for a semiconductor element comprises preparing a semiconductor body (100) having a first conductive type zone (20) in inner (103) and edge (104) regions and at least one second conductive type zone (30) in the front (101) inner region. The vacancy density in the lattice is raised at the edge and heavy metal atoms diffused in.