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    표면 거칠기화 방법
    83.
    发明公开
    표면 거칠기화 방법 无效
    表面粗糙化处理

    公开(公告)号：KR1020090105911A

    公开(公告)日：2009-10-07

    申请号：KR1020097010770

    申请日：2008-01-10

    Applicant: 소이텍

    Inventor： 아스파베르나르 ,  라가헤블랑샤르크리스텔레 ,  수비니콜라

    IPC: B81C1/00

    CPC classification number: B81C1/00952 ,  B81B3/001 ,  B81C2201/115

    Abstract: The invention relates to a process of forming a rough interface (12) in a semiconductor substrate (2), comprising: the formation, on a surface (4) of said substrate, of a zone of irregularities (8) in or on an oxide or a material (6) that may be oxidized, the formation of roughnesses in or on the semiconductor substrate (2) by thermal oxidation of or through this material or this oxide (6) and a part of the semiconductor substrate.

    Abstract translation: 本发明涉及在半导体衬底（2）中形成粗糙界面（12）的方法，包括：在所述衬底的表面（4）上形成在氧化物中或氧化物上的不规则区域（8） 或可能被氧化的材料（6），通过或通过该材料或该氧化物（6）和半导体衬底的一部分的热氧化在半导体衬底（2）中或之上形成粗糙度。

    3 차원 멤즈 미세구조체의 고착방지를 위한 부양 장치
    84.
    发明公开
    3 차원 멤즈 미세구조체의 고착방지를 위한 부양 장치 失效
    释放微机械微结构抗微生物装置

    公开(公告)号：KR1020090018257A

    公开(公告)日：2009-02-20

    申请号：KR1020070082558

    申请日：2007-08-17

    Applicant: 한국전자통신연구원

    Inventor： 제창한 ,  이명래 ,  정성혜 ,  황건 ,  최창억

    IPC: B81B7/00 ,  H01L21/304 ,  B81C1/00

    CPC classification number: B81B3/001 ,  B81C2201/115

    Abstract: A lifting device for preventing fixing of a 3D MEMS(Micro Electro Mechanical System) micro-structure is provided to remove a cleaning solution left on a substrate and a micro-structure by using a simple device without fixing the 3D MEMS micro-structure onto the substrate. A lifting device for preventing fixing of a 3D MEMS micro-structure includes a substrate(10) and micro-protrusions(20). The micro-protrusions exhaust a cleaning solution flowing from a micro-structure located thereon. The micro-protrusions are formed on the substrate and have a predetermined height. A fixing preventing material(30) is deposited on the micro-protrusions.

    Abstract translation: 提供了用于防止3D MEMS（微机电系统）微结构的固定的提升装置，以通过使用简单的装置来去除残留在基板和微结构上的清洁溶液，而不将3D MEMS微结构固定在 基质。 用于防止3D MEMS微结构的固定的提升装置包括基板（10）和微突起（20）。 微型突起排出从位于其上的微结构流动的清洁溶液。 微型突起形成在基板上并具有预定的高度。 固定防止材料（30）沉积在微突起上。

    Modification to rough polysilicon using ion implantation and silicide
    89.
    发明授权
    Modification to rough polysilicon using ion implantation and silicide 有权

    公开(公告)号：US11952267B2

    公开(公告)日：2024-04-09

    申请号：US17584698

    申请日：2022-01-26

    Applicant: INVENSENSE, INC.

    Inventor： Alan Cuthbertson ,  Daesung Lee

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00166 ,  B81B3/001 ,  B81B3/0056 ,  B81B3/0089 ,  B81B2203/04 ,  B81C1/00031 ,  B81C2201/0166 ,  B81C2201/115

    Abstract: A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method can comprise forming a MEMS layer based on fusion bonding a handle MEMS with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

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