Bright and durable field emission source derived from refractory taylor cones
    81.
    发明授权
    Bright and durable field emission source derived from refractory taylor cones 有权
    源自耐火泰勒锥的明亮耐用的场致发射源

    公开(公告)号:US09524848B2

    公开(公告)日:2016-12-20

    申请号:US14536555

    申请日:2014-11-07

    Applicant: Gregory Hirsch

    Inventor: Gregory Hirsch

    Abstract: A method of producing field emitters having improved brightness and durability relying on the creation of a liquid Taylor cone from electrically conductive materials having high melting points. The method calls for melting the end of a wire substrate with a focused laser beam, while imposing a high positive potential on the material. The resulting molten Taylor cone is subsequently rapidly quenched by cessation of the laser power. Rapid quenching is facilitated in large part by radiative cooling, resulting in structures having characteristics closely matching that of the original liquid Taylor cone. Frozen Taylor cones thus obtained yield desirable tip end forms for field emission sources in electron beam applications. Regeneration of the frozen Taylor cones in-situ is readily accomplished by repeating the initial formation procedures. The high temperature liquid Taylor cones can also be employed as bright ion sources with chemical elements previously considered impractical to implement.

    Abstract translation: 一种制造具有改善的亮度和耐久性的场致发射体的方法,其依赖于具有高熔点的导电材料产生液体泰勒锥。 该方法要求用聚焦激光束熔化线基底的端部,同时在材料上施加高的正电位。 随后通过停止激光功率使所得的熔融泰勒锥快速淬火。 在很大程度上通过辐射冷却促进快速淬火,导致具有与原始液体泰勒锥的特征密切相似的特征的结构。 因此获得的冷冻泰勒锥在电子束应用中产生用于场发射源的期望的尖端形式。 通过重复初始形成程序容易地实现冷冻泰勒锥的原位再生。 高温液体泰勒锥也可用作具有以前认为不实际实施的化学元素的明亮离子源。

    METHOD AND DEVICE FOR PRODUCING NANOTIPS
    82.
    发明申请
    METHOD AND DEVICE FOR PRODUCING NANOTIPS 有权
    用于生产纳米粒子的方法和装置

    公开(公告)号:US20160186333A1

    公开(公告)日:2016-06-30

    申请号:US14897769

    申请日:2014-06-13

    Abstract: A method for producing a nanotip from a tip material provides a substrate which consists of the tip material or has the material in the form of a coating, produces a mask from a mask material selected so that, in a predefined reactive ion etching process, the mask material is removed at a lower etching rate than the tip material, and carries out the reactive ion etching process in an etching chamber. The mask material is additionally selected so that a gaseous component is released therefrom during the reactive ion etching process, the gaseous component not being released from the tip material. The method further comprises detecting the gaseous component while the ion etching process is being carried out, repeatedly determining whether an amount of the gaseous component in the etching chamber reaches a predefined lower threshold, and stopping the reactive ion etching process when the lower threshold is reached.

    Abstract translation: 从尖端材料制造纳米尖端的方法提供了由尖端材料组成或具有涂层形式的材料的衬底,从被选择的掩模材料产生掩模,使得在预定义的反应离子蚀刻工艺中, 掩模材料以比尖端材料更低的蚀刻速率被去除,并且在蚀刻室中进行反应离子蚀刻工艺。 附加地选择掩模材料,使得在反应离子蚀刻工艺期间气态组分从其中释放,气体组分不从顶端材料释放。 该方法还包括在进行离子蚀刻处理时检测气体成分,重复地确定蚀刻室中的气体成分的量是否达到预定的下限,并且当达到下限阈值时停止反应离子蚀刻处理 。

    Self-aligned gated emitter tip arrays
    83.
    发明授权
    Self-aligned gated emitter tip arrays 有权
    自对准栅极发射极尖阵列

    公开(公告)号:US09196447B2

    公开(公告)日:2015-11-24

    申请号:US14067668

    申请日:2013-10-30

    Abstract: Methods for fabrication of self-aligned gated tip arrays are described. The methods are performed on a multilayer structure that includes a substrate, an intermediate layer that includes a dielectric material disposed over at least a portion of the substrate, and at least one gate electrode layer disposed over at least a portion of the intermediate layer. The method includes forming a via through at least a portion of the at least one gate electrode layer. The via through the at least one gate electrode layer defines a gate aperture. The method also includes etching at least a portion of the intermediate layer proximate to the gate aperture such that an emitter structure at least partially surrounded by a trench is formed in the multilayer structure.

    Abstract translation: 描述了自对准浇口尖端阵列的制造方法。 该方法在包括衬底,包括设置在衬底的至少一部分上的电介质材料的中间层以及设置在中间层的至少一部分上的至少一个栅电极层的多层结构上进行。 该方法包括通过至少一个栅极电极层的至少一部分形成通孔。 通过至少一个栅极电极层的通孔限定栅极孔径。 该方法还包括蚀刻靠近栅极孔的中间层的至少一部分,使得在多层结构中形成至少部分被沟槽包围的发射极结构。

    Bright and Durable Field Emission Source Derived from Refractory Taylor Cones
    85.
    发明申请
    Bright and Durable Field Emission Source Derived from Refractory Taylor Cones 有权
    来自耐火泰勒锥的明亮耐用场发射源

    公开(公告)号:US20150123010A1

    公开(公告)日:2015-05-07

    申请号:US14536555

    申请日:2014-11-07

    Applicant: Gregory Hirsch

    Inventor: Gregory Hirsch

    Abstract: A method of producing field emitters having improved brightness and durability relying on the creation of a liquid Taylor cone from electrically conductive materials having high melting points. The method calls for melting the end of a wire substrate with a focused laser beam, while imposing a high positive potential on the material. The resulting molten Taylor cone is subsequently rapidly quenched by cessation of the laser power. Rapid quenching is facilitated in large part by radiative cooling, resulting in structures having characteristics closely matching that of the original liquid Taylor cone. Frozen Taylor cones thus obtained yield desirable tip end forms for field emission sources in electron beam applications. Regeneration of the frozen Taylor cones in-situ is readily accomplished by repeating the initial formation procedures. The high temperature liquid Taylor cones can also be employed as bright ion sources with chemical elements previously considered impractical to implement.

    Abstract translation: 一种制造具有改善的亮度和耐久性的场致发射体的方法,其依赖于具有高熔点的导电材料产生液体泰勒锥。 该方法要求用聚焦激光束熔化线基底的端部,同时在材料上施加高的正电位。 随后通过停止激光功率使所得的熔融泰勒锥快速淬火。 在很大程度上通过辐射冷却促进快速淬火,导致具有与原始液体泰勒锥的特征密切相似的特征的结构。 因此获得的冷冻泰勒锥在电子束应用中产生用于场发射源的期望的尖端形式。 通过重复初始形成程序容易地实现冷冻泰勒锥的原位再生。 高温液体泰勒锥也可用作具有以前认为不实际实施的化学元素的明亮离子源。

    SELF-ALIGNED GATED EMITTER TIP ARRAYS
    88.
    发明申请
    SELF-ALIGNED GATED EMITTER TIP ARRAYS 有权
    自对准浇口发射器提升阵列

    公开(公告)号:US20140285084A1

    公开(公告)日:2014-09-25

    申请号:US14067668

    申请日:2013-10-30

    Abstract: Methods for fabrication of self-aligned gated tip arrays are described. The methods are performed on a multilayer structure that includes a substrate, an intermediate layer that includes a dielectric material disposed over at least a portion of the substrate, and at least one gate electrode layer disposed over at least a portion of the intermediate layer. The method includes forming a via through at least a portion of the at least one gate electrode layer. The via through the at least one gate electrode layer defines a gate aperture. The method also includes etching at least a portion of the intermediate layer proximate to the gate aperture such that an emitter structure at least partially surrounded by a trench is formed in the multilayer structure.

    Abstract translation: 描述了自对准浇口尖端阵列的制造方法。 该方法在包括衬底,包括设置在衬底的至少一部分上的电介质材料的中间层以及设置在中间层的至少一部分上的至少一个栅电极层的多层结构上进行。 该方法包括通过至少一个栅极电极层的至少一部分形成通孔。 通过至少一个栅极电极层的通孔限定栅极孔径。 该方法还包括蚀刻靠近栅极孔的中间层的至少一部分,使得在多层结构中形成至少部分被沟槽包围的发射极结构。

    ION SOURCE WITH CATHODE HAVING AN ARRAY OF NANO-SIZED PROJECTIONS
    89.
    发明申请
    ION SOURCE WITH CATHODE HAVING AN ARRAY OF NANO-SIZED PROJECTIONS 有权
    具有纳米尺寸投影阵列的阴极的离子源

    公开(公告)号:US20140183348A1

    公开(公告)日:2014-07-03

    申请号:US13728950

    申请日:2012-12-27

    Abstract: An ion source for use in a particle accelerator includes at least one cathode. The at least one cathode has an array of nano-sized projections and an array of gates adjacent the array of nano-sized projections. The array of nano-sized projections and the array of gates have a first voltage difference such that an electric field in the cathode causes electrons to be emitted from the array of nano-sized projections and accelerated downstream. There is a ion source electrode downstream of the at least one cathode, and the at least one cathode and the ion source electrode have the same voltage applied such that the electrons enter the space encompassed by the ion source electrode, some of the electrons as they travel within the ion source electrode striking an ionizable gas to create ions.

    Abstract translation: 用于粒子加速器的离子源包括至少一个阴极。 所述至少一个阴极具有纳米尺寸突起的阵列和与纳米尺寸突起阵列相邻的栅极阵列。 纳米尺寸突起阵列和栅极阵列具有第一电压差,使得阴极中的电场使电子从纳米尺寸突起阵列发射并加速下游。 在至少一个阴极的下游存在离子源电极,并且至少一个阴极和离子源电极施加相同的电压,使得电子进入由离子源电极包围的空间中,一些电子就像它们 在离子源电极内行进进入可电离气体以产生离子。

Patent Agency Ranking