Abstract:
The work function of electron emitters can be modified by forming a modifying layer at the surface using low energy ion implantation, in a controlled environment, placing chosen elements below the surface of electron emitters as Cs implanted in Si(100) at four different doses illustrates. Sometimes implanted species are deep enough that they do not react with the atmosphere during subsequent low-temperature processing. Then, species implanted in the emitting surfaces are segregated using elevated temperature treatment of the emitters in vacuum and/or reactive gases. The implanted ions modify the work function at the surface, via thin layers of the implanted species on top of the emitter surfaces, or compounds or alloy layers at the surface of the emitters. Depending on the implanted species, the initial emitter material, and the environment, these layers can either increase or decease the work function of the emitter.
Abstract:
A matrix addressable flat panel display includes a flat cathode (31) operable for emitting electrons to an anode (15) when an electric field is produced across the surface of the flat cathode by two electrodes (34) placed on each side of the flat cathode. The flat cathode (31) may consist of a cermet or amorphic diamond or some other combination of a conducting material and an insulating material such as a low effective work function material. The electric field produced causes electrons to hop on the surface of the cathode (31) at the conducting-insulating interfaces. An electric field produced between the anode (15) and the cathode (31) causes these electrons to bombard a phosphor layer (16) on the anode (15).
Abstract:
A field emitter structure, comprising: a base substrate (42); a field emitter element (48) on the base substrate; a multilayer differentially etched dielectric stack (58, 60) circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode (66) overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.
Abstract:
A field emitter device (10) for selective emission of an electron and/or ion beam comprising a substrate member (12) having an array (14) of field emitter elements (16) thereon, in which the field emitter elements and/or substrate member have a varied conformation producing a beam of appropriate focused and/or directional character. Also disclosed is a display article (260) for producing an output in response to impingement of electron beams thereon, comprising a substrate member (262) on which is disposed an array of phosphor elements (264), with a diamond-like film coated on the phosphor elements to maintain the phosphor elements in position on the substrate member. Also disclosed is a field emission apparatus (210) comprising such field emitter device and display article, such as a flat panel display.
Abstract:
A cathode structure contains electronegative matter (22), which consists of oxygen and/or fluorine, chemically bonded to a carbon containing cathode (10). The bonding is accomplished by subjecting carbon-containing cathode to the electronegative matter in dissociated form using a technique such as a plasma. Electropositive metal (24R) is chemically bonded to the electronegative matter. The combination of the electropositive metal and electronegative matter enhances the electron emissivity by reducing the work function.
Abstract:
A field-emission type electron source includes (i) a single-crystal tungsten rod having a sharpened terminus and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus. In preferred design, the single-crystal tungsten rod is placed in a gaseous medium that consists of oxygen and a non-oxygen gas. The molar ratio between oxygen and the non-oxygen gas is greater than 1:1.
Abstract:
A field-emission electron gun including an electron emission tip, an extractor anode, and a mechanism creating an electric-potential difference between the emission tip and the extractor anode. The emission tip includes a metal tip and an end cone produced by chemical vapor deposition on a nanofilament, the cone being aligned and welded onto the metal tip. The electron gun can be used for a transmission electron microscope.
Abstract:
A field-emission electron gun including an electron emission tip, an extractor anode, and a mechanism creating an electric-potential difference between the emission tip and the extractor anode. The emission tip includes a metal tip and an end cone produced by chemical vapor deposition on a nanofilament, the cone being aligned and welded onto the metal tip. The electron gun can be used for a transmission electron microscope.
Abstract:
Electron emission sources, electron emission devices including the electron emission sources, and methods of making the electron emission sources are provided. The electron emission source includes a carbon-based material, and a degradation prevention material for preventing degradation of the carbon-based material. A binding energy between the degradation prevention material and external oxygen is greater than a binding energy between the carbon-based material and the external oxygen. The electron emission sources have excellent field emission efficiencies and long lifetimes.
Abstract:
Some embodiments of the invention include structures and methods for a field emitter display device with a coating and an implantation layer underneath a surface of the emitter. Other embodiments are described and claimed.