中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

2 records (took 0.017 seconds)

    플라즈마 처리 장치 및 가변 임피던스 수단의 교정 방법
    1.
    发明公开
    플라즈마 처리 장치 및 가변 임피던스 수단의 교정 방법 有权
    等离子体处理装置和校正可变阻抗装置的方法

    公开(公告)号：KR1020040007351A

    公开(公告)日：2004-01-24

    申请号：KR1020030047603

    申请日：2003-07-12

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 야마자와요헤이 ,  이와타마나부 ,  고시미즈치시오 ,  히구치후미히코 ,  시미즈아키타카 ,  야마시타아사오 ,  이와마노부히로 ,  히가시우라츠토무 ,  장동셍 ,  나카야미치코 ,  무라카미노리카즈

    IPC: H01L21/02

    Abstract: PURPOSE: A plasma processing apparatus and a method for correcting a variable impedance device are provided to perform a plasma process on a target substrate by using plasma in a semiconductor processing system. CONSTITUTION: An airtight process chamber(4) is used for accommodating a target substrate. A gas supply system supplies a process gas into the process chamber. An exhaust system exhausts an interior of the process chamber and sets the interior of the process chamber to a vacuum state. A first and a second electrode(6,18) are arranged in the process chamber to oppose each other. An RF field for turning the process gas into plasma by excitation is formed between the first and second electrodes. An RF power supply(14,28) is connected to the first or second electrode through a matching circuit and which supplies RF power. The matching circuit serves to automatically perform input impedance matching relative to the RF power. An impedance setting section(30) is connected, through an interconnection, to a predetermined member to be electrically coupled with the plasma in the plasma process, and which sets a backward-direction impedance as an impedance against an RF component input from the plasma to the predetermined member. The impedance setting section is capable of changing a value of the backward-direction impedance. A controller(32) is used for supplying a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

    Abstract translation: 目的：提供等离子体处理装置和校正可变阻抗装置的方法，以通过在半导体处理系统中使用等离子体来在目标基板上执行等离子体处理。 构成：密封处理室（4）用于容纳目标衬底。 气体供应系统将处理气体供应到处理室中。 排气系统排出处理室的内部并将处理室的内部设置为真空状态。 第一和第二电极（6,18）布置在处理室中以彼此相对。 在第一和第二电极之间形成用于通过激发将工艺气体转化成等离子体的RF场。 RF电源（14,28）通过匹配电路连接到第一或第二电极，并提供RF功率。 匹配电路用于自动执行相对于RF功率的输入阻抗匹配。 阻抗设定部（30）通过互连连接到等离子体处理中与等离子体电耦合的预定部件，并且将反向阻抗设定为针对从等离子体输入的RF分量的阻抗， 预定成员。 阻抗设定部能够改变反向阻抗的值。 控制器（32）用于向阻抗设定部分提供关于反向阻抗的预设值的控制信号。

Patent Agency Ranking