Abstract:
PURPOSE: To provide a method for preparing stoichiometric barium strontium titanate thin films of high quality by direct liquid injection metal organic chemical vapor deposition under the milder conditions using organic complexes of Ba, Sr and Ti that are capable of being vaporized together as raw materials for mixing since they have similar thermal stability, decomposition characteristics and solubility. CONSTITUTION: In a method for preparing barium strontium titanate(BaxSr1-xTiO3) thin films by direct liquid injection metal organic chemical vapor deposition, the method is characterized in that a mixture of Ba(th)2(tmeea), Sr(thd)2(tmeea) and Ti(thd)2(O¬i Pr)2 $ûthd=2,2,6,6-tetramethylheptanedionate, tmeea=tris£2-(2-methoxyethoxy)ethyl|amine, O¬i Pr=isoproxy$ý is used as raw materials of barium, strontium and titanium, wherein the method comprises the steps of: dissolving the raw materials of barium, strontium and titanium into an organic solvent; transferring the solution to an instantaneous vaporizer heated to a temperature of 200 to 250 deg.C so that the solution is vaporized; and injecting the vaporized solution into a deposition container having pressure of 0.5 to 2.0 torr so that the vaporized solution is deposited on a matrix heated to a temperature of 300 to 500 deg.C, wherein the method further comprises a step of heat treating the deposited matrix in a temperature range of 600 to 800 deg.C, and wherein the raw materials of barium, strontium and titanium are mixed in a ratio of 1 ¢¦ 2:1:5 ¢¦ 10.
Abstract:
PURPOSE: Provided is a preparation method of a ruthenium complex with enhanced yield using a small amount of zinc catalyst, thereby mass-producing the ruthenium complex. CONSTITUTION: The preparation process characteristically comprises the steps of: reaction of ruthenium trichloride with 3-25 equivalents of 1,3-cyclohexadiene and 5-20 equivalents of zinc powder base on the chloride at room temperature for 10-15 hours; and extracting the reaction product with an organic solvent, then removing the organic acid therefrom.
Abstract:
본 발명은 직접 액체 주입 금속 유기물 화학 증착법에 의해 티탄산바륨스트론튬 박막을 제조하는 방법에 관한 것으로서, 바륨, 스트론튬 및 티타늄의 원료로서 Ba(thd) 2 (tmeea), Sr(thd) 2 (tmeea) 및 Ti(thd) 2 (O i Pr) 2 {thd = 2,2,6,6-테트라메틸헵탄디오네이트, tmeea = 트리스[2-(2-메톡시에톡시)에틸]아민, O i Pr = 이소프로폭시} 각각을 혼합하여 사용하는 것을 특징으로 하는 본 발명의 방법에 의하면, 고품위의 화학량론적 티탄산바륨스트론튬 박막을 보다 온화한 조건에서 제조할 수 있다.
Abstract:
Provided are a palladium aminoalkoxide compound in a solid state at room temperature and a process for preparation of palladium nano-catalyst using the same without external reduction agent to exhibit extremely high volatility and thermal stability and high catalytic activity in organic synthesis applications. The palladium(II) aminoalkoxide compound or hydrate thereof represented by following formula 1, wherein m is an integer of 1 to 3; R and R' include fluorine or not and are linear or branched alkyl groups having C1-C4. The compound is prepared reacting any one of bis(acetonitril)dihalogenated palladium(II) compound and alkali metal salt of aminoalkoxide, or halogenated palladium(II) compound and alkali metal salt of aminoalkoxide. The process for preparing palladium nano-particles comprises thermally decomposing the palladim(II) aminoalkoxide compound or hydrate thereof at 100 to 300 deg.C under an organic compound containing an electron donor element.
Abstract:
PURPOSE: A precursor of zirconium dioxide, a preparation method thereof and a method for forming thin film using the same are provided, which zirconium dioxide precursor has thermal stability and improved volatility, so that high quality of zirconium thin film can be formed. CONSTITUTION: The precursor of zirconium dioxide represented by formula (1) is provided, wherein R is C1-4 alkyl optionally containing fluor; and R' is C1-4 alkyl optionally containing fluor or SiR'3. The method for preparing the precursor of zirconium dioxide of formula (1) comprises reacting zirconium complex of formula (2) with alkali metal salt of alcohol of formula (3), wherein X is chlorine, bromine or iodine; and M is Li, Na or K. The method for preparing the precursor of zirconium dioxide of formula (1) comprises reacting zirconium complex of formula (2) with alcohol of formula (4) in the presence of tertiary amine. The method for forming thin film comprises carrying out MOCVD system(Metal-Organic Chemical Vapor Deposition Systems) or ALD(atomic layer deposition) using the precursor of zirconium dioxide of formula (1).
Abstract:
PURPOSE: Provided is an organic alkali earth metal complex with thermal stability and good vaporization for formation of metal oxide composite films. The resultant complex is adapted to the production of semiconductors, photoelectrics and piezoelectrics. CONSTITUTION: The complex of organic alkali earth metals, L-M-L', is prepared by adding alcohol to organic solution containing alkali earth metal, expressed by the formula MX + xs HOR -->£M(OR)2|n, followed by mixing with chelate ligands L and L', expressed by the formula £M(OR)2|n + L + L' -->L-M-L', where M is Ba, Sr or Ca, L is R(CH3)CH(OH) (CH2)nCH(OH)(CH3)R'(R and R' are C1-C10 alkyl group, and n is an integer of 1-5), L' is N(CH2CH2XCH2CH2YZ)3(X and Y are O or NH, and Z is C1-C10 alkyl group).
Abstract:
본 발명은 하기 화학식 1로 표시되는 신규한 금속 알콕사이드 화합물과 그 제조 방법에 관한 것이다.
상기 식중, M은 바륨, 스트론튬 또는 티타늄이고 X 1 및 X 2 는 각각 RO(CH 2 ) n O-, (RO(CH 2 ) n ) 2 N-, RO(CH 2 ) n NH-, R 2 N- 또는 RO- 이며, R은 C 1 -C 4 알킬, Y는 수소 또는 C 1 -C 4 알킬이며, l 은 2 또는 4, m은 1 내지 3의 정수, n은 2 또는 3이다.
Abstract:
PURPOSE: Provided is an organic alkali earth metal complex with thermal stability and good vaporization for formation of metal oxide composite films. The resultant complex is adapted to the production of semiconductors, photoelectrics and piezoelectrics. CONSTITUTION: The complex of organic alkali earth metals, L-M-L', is prepared by adding alcohol to organic solution containing alkali earth metal, expressed by the formula MX + xs HOR -->£M(OR)2|n, followed by mixing with chelate ligands L and L', expressed by the formula £M(OR)2|n + L + L' -->L-M-L', where M is Ba, Sr or Ca, L is R(CH3)CH(OH) (CH2)nCH(OH)(CH3)R'(R and R' are C1-C10 alkyl group, and n is an integer of 1-5), L' is N(CH2CH2XCH2CH2YZ)3(X and Y are O or NH, and Z is C1-C10 alkyl group).