Abstract:
A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can comprise a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.
Abstract:
A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising: at least one membrane layer supported by a planar substrate, wherein the planar substrate comprises an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate, wherein the step of selectively removing the inner region of the planar substrate comprises using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer; such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border comprising the border region of the planar substrate and the first sacrificial layer situated between the border and the membrane layer.
Abstract:
Disclosed is a surface treatment apparatus and method for surface treatment of substrates such as wafers or substrates. The surface treatment apparatus comprises one or more support structures for supporting one or more substrates and one or more ultraviolet illumination sources configured to emit ultraviolet illumination, and being operable to treat said at least one surface of said one or more substrates while said one or more substrates being supported by said one or more support structures. The one or more ultraviolet illumination sources are distinct from an exposure source and not operable to emit exposure illumination for exposing a pattern on a wafer.
Abstract:
A pellicle membrane for a lithographic apparatus, said membrane comprising uncapped carbon nanotubes is provided. Also provided is a method of regenerating a pellicle membrane, said method comprising decomposing a precursor compound and depositing at least some of the products of decomposition onto the pellicle membrane. Also described is a method of reducing the etch rate of a pellicle membrane, said method comprising providing an electric field in the region of the pellicle membrane to redirect ions from the pellicle, or heating elements to desorb radicals from the pellicle, preferably wherein the pellicle membrane is a carbon nanotube pellicle membrane as well as an assembly for a lithographic apparatus, said assembly including a biased electrode near or including the pellicle membrane or heating means for pellicle membrane.
Abstract:
A protection device for an optical system of a lithographic apparatus, the optical system utilising electromagnetic radiation having a predetermined wavelength, the protection device comprising a film that is transparent to radiation of the predetermined wavelength and is positioned adjacent a component of the optical system during use of the lithographic apparatus.