Abstract:
A radiation source (60) suitable for providing a beam of radiation to an illuminator of a lithographic apparatus. The radiation source comprises a nozzle configured to direct a stream of fuel droplets (62) along a trajectory (64) towards a plasma formation location (66). The radiation source is configured to receive a first amount of radiation (68) such that the first amount of radiation is incident on a fuel droplet (62a) at the plasma formation location, and such that the first amount of radiation transfers energy into the fuel droplet to generate a modified fuel distribution (70), the modified fuel distribution having a surface. The radiation source is also configured to receive a second amount of radiation (72) such that the second amount of radiation is incident on a portion of the surface (70a) of the modified fuel distribution, the second amount of radiation having a p-polarized component with respect to the portion of the surface; and such that the second amount of radiation transfers energy to the modified fuel distribution to generate a radiation generating plasma, the radiation generating plasma emitting a third amount of radiation (74). The radiation source further comprises a collector (CO) configured to collect and direct at least a portion of the third amount of radiation. The radiation source is configured such that the second amount of radiation propagates in a first direction, the first direction being non-parallel to a normal to the portion of the surface of the modified fuel distribution.
Abstract:
An EUV radiation source comprising a fuel supply ( 200 ) configured to deliver a droplet of fuel to a plasma generation location ( 201 ), a first laser beam source configured to provide a first beam of laser radiation ( 205 ) incident upon the fuel droplet at the plasma generation location and thereby vaporizes the fuel droplet, and a second laser beam source configured to subsequently provide a second beam of laser radiation ( 205 ) at the plasma generation location, the second beam of laser radiation being configured to vaporize debris particles ( 252 ) arising from incomplete vaporization of the fuel droplet.
Abstract:
A reflector includes a multi layer mirror structure configured to reflect radiation at a first wavelength, and one or more additional layers. The absorbance and refractive index at a second wavelength of the multi layer mirror structure and the one or more additional layers, and the thickness of the multi layer mirror structure and the one or more additional layers, are configured such that radiation of the second wavelength which is reflected from a surface of the reflector interferes in a destructive manner with radiation of the second wavelength which is reflected from within the reflector.
Abstract:
A source-collector device is constructed and arranged to generate a radiation beam. The device includes a target unit constructed and arranged to present a target surface (301) of plasma-forming material; a laser unit (50) constructed and arranged to generate a beam of radiation directed onto the target surface so as to form a plasma (51) from said plasma-forming material; a contaminant trap (302) constructed and arranged to reduce propagation of particulate contaminants generated by the plasma; a radiation collector (303) comprising a plurality of grazing-incidence reflectors (303a) arranged to collect radiation emitted by the plasma and form a beam therefrom; and a filter (304) constructed and arranged to attenuate at least one wavelength range of the beam.
Abstract:
A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from tungsten-molybdenum alloy or a molybdenum-rhenium alloy or a tungsten-rhenium alloy or a tungsten-molybdenum-rhenium alloy.
Abstract:
A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.
Abstract:
A multilayer mirror (100) is configured to reflect extreme ultraviolet (EUV) radiation while absorbing a second radiation having a wavelength substantially- longer than that of the EUV radiation. The mirror includes a plurality of layer pairs (110, 112) stacked on a substrate (104). Each layer pair comprises a first layer (112) that includes a first material, and a second layer (110) that includes a second material. The first layer (112) is modified to reduce its contribution to reflection of the second radiation, compared with a simple layer of the same metal having the same thickness. Modifications can include doping with a third material in or around the metal layer to reduce its electric conductivity by chemical bonding or electron trapping, and/or splitting the metal layer into sub-layers with insulating layers. The number of layers in the stack is larger than known multilayer mirrors and may be tuned to achieve a minimum in IR reflection.
Abstract:
A laser driven light source comprises laser (52) and focusing optics (54). These produce a beam of radiation focused on a plasma forming zone within a container (40) containing a gas (e.g., Xe). Collection optics (44) collects photons emitted by a plasma (42) maintained by the laser radiation to form a beam of output radiation (46). The plasma has an elongate form (L > d) and the collecting optics is configured to collect photons emerging in the longitudinal direction from the plasma. The brightness of the plasma is increased compared with sources which collect radiation emerging transversely from the plasma. A metrology apparatus using the light source can achieve greater accuracy and/or throughput as a result of the increased brightness. Back reflectors may be provided. Microwave radiation may be used instead of laser radiation to form the plasma.
Abstract:
A radiation source (SO) is configured to generate extreme ultraviolet radiation. The radiation source (SO) includes a plasma formation site (2) located at a position in which a fuel will be contacted by a beam of radiation (5) to form a plasma, an outlet (16) configured to allow gas to exit the radiation source (SO), and a contamination trap (23) at least partially- located inside the outlet (16). The contamination trap is configured to trap (23) debris particles that are generated with the formation of the plasma.
Abstract:
A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.