公开(公告)号：JP2009152563A

公开(公告)日：2009-07-09

申请号：JP2008290439

申请日：2008-11-13

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： HOFMANS GERARDUS CAROLUS JOHAN ,  GERAETS HUBERTUS ANTONIUS ,  ZELLENRATH MARK ,  MAGNUSSON SVEN GUNNAR KRISTER

IPC: H01L21/027 ,  G03F9/02

CPC classification number: G03F7/70641 ,  G03F7/70683

Abstract: PROBLEM TO BE SOLVED: To provide a new method of performing leveling verification tests which has higher focus-versus alignment shift sensitivity and higher spatial sampling density.
SOLUTION: The method of measuring focus of the lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve. The method results in a focus-versus alignment shift sensitivity about 50 times higher (typically dX, Y/dZ=20) than the present LVT.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种执行校准验证测试的新方法，其具有较高的对焦偏移对准偏移灵敏度和较高的空间采样密度。 解决方案：测量光刻投影设备的焦点的方法包括用多个验证场曝光光致抗蚀剂覆盖的测试基板。 每个验证字段包括多个验证标记，并且使用预定的聚焦偏移曝光验证字段。 在显影之后，使用转置的焦点曲线测量每个验证标记的对准偏移并将其转换为散焦数据。 该方法导致与目前的LVT相比高约50倍（通常为dX，Y / dZ = 20）的聚焦 - 对准偏移灵敏度。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：SG11201609284TA

公开(公告)日：2016-12-29

申请号：SG11201609284T

申请日：2015-04-24

Applicant: ASML NETHERLANDS BV

Inventor： BERENDSEN CHRISTIANUS WILHELMUS JOHANNES ,  BECKERS MARCEL ,  CASTELIJNS HENRICUS JOZEF ,  GERAETS HUBERTUS ANTONIUS ,  KOEVOETS ADRIANUS HENDRIK ,  LEVASIER LEON MARTIN ,  SCHAAP PETER ,  STREEFKERK BOB ,  TROMP SIEGFRIED ALEXANDER

IPC: G03F7/20

Abstract: A method for compensating for an exposure error in an exposure process of a lithographic apparatus that comprises a substrate table, the method comprising: obtaining a dose measurement indicative of a dose of IR radiation that reaches substrate level, wherein the dose measurement can be used to calculate an amount of IR radiation absorbed by an object in the lithographic apparatus during an exposure process; and using the dose measurement to control the exposure process so as to compensate for an exposure error associated with the IR radiation absorbed by the object during the exposure process.

公开(公告)号：SG153023A1

公开(公告)日：2009-06-29

申请号：SG2008088205

申请日：2008-11-19

Applicant: ASML NETHERLANDS BV

Inventor： HOFMANS GERARDUS CAROLUS JOHANNUS ,  GERAETS HUBERTUS ANTONIUS ,  MARK ZELLENRATH ,  MAGNUSSON SVEN GENNAR KRISTER

Abstract: A method of measuring focus of a lithographie projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset FO. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve. The method according to the invention results in a focus-versus alignment shift sensitivity some 50 times higher (typically dX,Y/dZ = 20) than the present LVT.

公开(公告)号：NL2008523A

公开(公告)日：2012-05-03

申请号：NL2008523

申请日：2012-03-22

Applicant: ASML NETHERLANDS BV

Inventor： GIJSBERTSEN ARJAN ,  GERAETS HUBERTUS ANTONIUS ,  SEGERS BART ,  DAVYDOVA NATALIA

IPC: G03F7/20