POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD, OPTICAL ELEMENT
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    发明申请
    POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD, OPTICAL ELEMENT 审中-公开
    位置测量方法,位置测量装置,光刻装置和装置制造方法,光学元件

    公开(公告)号:WO2013152878A3

    公开(公告)日:2014-02-27

    申请号:PCT/EP2013052384

    申请日:2013-02-07

    Abstract: An apparatus (AS) measures positions of marks (202) on a lithographic substrate (W). An illumination arrangement (940, 962, 964) provides off-axis radiation from at least first and second regions. The first and second source regions are diametrically opposite one another with respect to an optical axis (O) and are limited in angular extent. The regions may be small spots selected according to a direction of periodicity of a mark being measured, or larger segments. Radiation at a selected pair of source regions can be generated by supplying radiation at a single source feed position to a self-referencing interferometer. A modified half wave plate is positioned downstream of the interferometer, which can be used in the position measuring apparatus. The modified half wave plate has its fast axis in one part arranged at 45° to the fast axis in another part diametrically opposite.

    Abstract translation: 设备(AS)测量光刻基板(W)上的标记(202)的位置。 照明装置(940,962,964)提供至少第一和第二区域的离轴辐射。 第一和第二源极区域相对于光轴线(O)彼此径向相对并且在角度范围内受到限制。 这些区域可以是根据正被测量的标记的周期方向或较大的段选择的小点。 可以通过将单个源馈送位置处的辐射提供给自参考干涉仪来产生所选择的一对源区域处的辐射。 修改后的半波片位于干涉仪的下游,可用于位置测量装置。 修改后的半波片的一个部分的快轴与另一部分直径相对的快轴成45度。

    METHODS AND PATTERNING DEVICES AND APPARATUSES FOR MEASURING FOCUS PERFORMANCE OF A LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD

    公开(公告)号:SG11201804232QA

    公开(公告)日:2018-06-28

    申请号:SG11201804232Q

    申请日:2016-12-06

    Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

    POSITION SENSOR, LITHOGRAPHIC APPARATUS AND METHOD FOR MANUFACTURING DEVICES

    公开(公告)号:SG11201900623PA

    公开(公告)日:2019-02-27

    申请号:SG11201900623P

    申请日:2017-06-30

    Abstract: An alignment sensor for a lithographic apparatus has an optical system configured to deliver, collect and process radiation selectively in a first waveband (e.g. 500-900 nm) and/or in a second waveband (e.g. 1500-2500 nm). The radiation of the first and second wavebands share a common optical path in at least some portion of the optical system, while the radiation of the first waveband is processed by a first processing sub-system and the radiation of the second waveband is processed by a second processing sub-system. The processing subsystems in one example include self-referencing interferometers. The radiation of the second waveband allows marks to be measured through an opaque layer. Optical coatings and other components of each processing sub-system can be tailored to the respective waveband, without completely duplicating the optical system.

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