Abstract:
A method for converting a vector-based representation of a desired device pattern for an exposure apparatus, a lithography or exposure apparatus, an apparatus and method to provide data to a programmable patterning device, and a device manufacturing method. In an embodiment, the method for converting outputs a rasterized representation of the desired dose pattern of radiation corresponding to the desired device pattern, wherein the vector-based representation comprises primitive data identifying one or more primitive patterns; and instance data identifying how at least a portion of the desired device pattern is formed from one or more instances of each identified primitive pattern, the method including forming a rasterized primitive of each primitive pattern identified in the primitive data, and forming the rasterized representation by storing each rasterized primitive in association with the instance data corresponding to that rasterized primitive.
Abstract:
The invention relates to intensity values for a plurality of beams used to irradiate a plurality of locations on a target are determined with reference to the position and/or rotation of the locations. Also provided is an associated lithographic or exposure apparatus, an associated device manufacturing method and an associated computer program.
Abstract:
A method, a lithographic apparatus, and a computer-readable medium provide a model of a metrology tool to determine a measurement error and/or covariance of particular parameters, such as the critical dimension and the sidewall angle, of a number of targets, such as gratings. The model can include at least one measurement error source. The method can include using a metrology tool to measure each target and using the model to determine the measurement error of the measured parameters of the particular target when measured by said metrology tool. The value of the measured parameter along with the corresponding measurement error is then determined in the metrology tool output for each particular target, and can be used in exposure focus and dose control in a lithographic process.