公开(公告)号：GB2520399A

公开(公告)日：2015-05-20

申请号：GB201416784

申请日：2014-09-23

Applicant: IBM

Inventor： HEKMATSHOAR-TABARI BAHMAN ,  BAYRAM CAN

IPC: H01L31/0328 ,  H01L31/074

Abstract: A photovoltaic device including a single junction solar cell provided by an absorption layer 10 of a type IV semiconductor material having a first conductivity, and an emitter layer 20 of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material is non-crystalline and has a thickness that is no greater than 50 nm. Wherein, the type III-V semiconductor material may be amorphous, nano-crystalline or micro-crystalline. Also disclosed is a method of forming a photovoltaic device as above. The type IV semiconductor material may be silicon (Si), germanium (Ge), silicon-germanium (SiGe) alloy, silicon doped with carbon (Si:C) or a combination thereof. The type III-V material may be any semiconductive III-V material, including binary, tertiary and quaternary materials but is more preferably gallium nitride (GaN), indium gallium nitride (InGaN), gallium phosphide (GaP), indium phosphide (InP), gallium phosphide nitride (GaPN) or combinations thereof. The emitter layer 20 may be in direct contact with the absorption layer 10 or a buffer layer of type III-V semiconductor material may be provided between the absorption layer 10 and emitter layer 20.

公开(公告)号：GB2521517A

公开(公告)日：2015-06-24

申请号：GB201418871

申请日：2014-10-23

Applicant: IBM

Inventor： BAYRAM CAN ,  SADANA DEVENDRA ,  BEDELL STEPHEN ,  OTT JOHN ,  FOGEL KEITH

IPC: H01L31/18

Abstract: A spall releasing plane 15 is formed in the middle of and embedded within a Group III nitride material layer 14. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions and can be formed by adding impurities during the vapour deposition process. Device layer 16, stressor layer 22 and handle 24 are deposited onto the upper surface of the material layer. An edge exclusion layer 18 and adhesion layer 20 can be added above the device layer to aide in the spalling process. This method overcomes the issue of having a lattice mismatch when using Group III nitride materials, e.g. GaN, AlN, InGaN.

公开(公告)号：DE102014116231A1

公开(公告)日：2015-06-25

申请号：DE102014116231

申请日：2014-11-07

Applicant: IBM

Inventor： BAYRAM CAN ,  BEDELL STEPHEN W ,  FOGEL KEITH E ,  OTT JOHN A ,  SADANA DEVENDRA K

IPC: H01L21/20 ,  H01L33/30

Abstract: Eine Abspalt-Ablösungsebene wird in eine Gruppe-III-Nitrid-Materialschicht eingebettet gebildet. Die Abspalt-Ablösungsebene umfasst ein Material, welches eine andere Spannung, eine andere Struktur und eine andere Zusammensetzung als die Abschnitte der Gruppe-III-Nitrid-Materialschicht aufweist, welche die Gruppe-III-Nitrid-Materialschicht bereitstellen und die Abspalt-Ablösungsebene einbetten. Die Abspalt-Ablösungsebene stellt eine Region einer geschwächten Materialebene innerhalb der Gruppe-III-Nitrid-Materialschicht bereit, welche während eines anschließend durchgeführten Abspaltverfahrens verwendet werden kann, um einen der Abschnitte des Gruppe-III-Nitridmaterials von der ursprünglichen Gruppe-III-Nitrid-Materialschicht abzulösen. Speziell tritt während des Abspaltverfahrens innerhalb der Abspalt-Ablösungsebene, die in die ursprüngliche Gruppe-III-Nitrid-Materialschicht eingebettet ist, ein Beginn und eine Fortpflanzung von Rissen auf.

公开(公告)号：GB2521517B

公开(公告)日：2015-12-30

申请号：GB201418871

申请日：2014-10-23

Applicant: IBM

Inventor： BAYRAM CAN ,  SADANA DEVENDRA ,  BEDELL STEPHEN ,  OTT JOHN ,  FOGEL KEITH

IPC: H01L31/18

Abstract: A spall releasing plane is formed embedded within a Group III nitride material layer. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions that provide the Group III nitride material layer and embed the spall releasing plane. The spall releasing plane provides a weakened material plane region within the Group III nitride material layer which during a subsequently performed spalling process can be used to release one of the portions of Group III nitride material from the original Group III nitride material layer. In particular, during the spalling process crack initiation and propagation occurs within the spall releasing plane embedded within the original Group III nitride material layer.

公开(公告)号：CA2871871A1

公开(公告)日：2015-06-19

申请号：CA2871871

申请日：2014-11-19

Applicant: IBM

Inventor： BAYRAM CAN ,  SADANA DEVENDRA ,  BEDELL STEPHEN W ,  OTT JOHN A ,  FOGEL KEITH E

IPC: H01L21/02 ,  H01L31/18 ,  H01L33/32

Abstract: A spall releasing plane is formed embedded within a Group III nitride material layer. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions that provide the Group III nitride material layer and embed the spall releasing plane. The spall releasing plane provides a weakened material plane region within the Group III nitride material layer which during a subsequently performed spalling process can be used to release one of the portions of Group III nitride material from the original Group III nitride material layer. In particular, during the spalling process crack initiation and propagation occurs within the spall releasing plane embedded within the original Group III nitride material layer.