公开(公告)号：JP2011211175A

公开(公告)日：2011-10-20

申请号：JP2011044902

申请日：2011-03-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： NGUYEN SON VAN ,  GRILL ALFRED ,  GATES STEPHEN M ,  VO TUAN ANH ,  DIMITRAKOPOULOS CHRISTOS ,  NEUMAYER DEBORAH ANN ,  DAMON B FARMER

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/786

CPC classification number: H01L29/1606 ,  H01L29/7781 ,  H01L29/78 ,  H01L29/7831

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor structure and electronic device, formed in high density, and having smaller structural dimensions and a more exact shape.SOLUTION: Semiconductor structures and electronic devices include at least one layer of an interfacial dielectric material located on an upper surface of a carbon-based material. The at least one layer of interfacial dielectric material has a short-range crystallographic bonding structure, typically hexagonal, that is the same as that of the carbon-based material and, as such, the at least one layer of interfacial dielectric material does not change the electronic structure of the carbon-based material. The presence of the at least one layer of interfacial dielectric material having the same short-range crystallographic bonding structure as that of the carbon-based material improves the interfacial bonding between the carbon-based material and any overlying material layer, including a dielectric material, a conductive material or a combination of a dielectric material and a conductive material. The improved interfacial bonding in turn facilitates formation of devices including a carbon-based material.

Abstract translation: 要解决的问题：提供一种形成为高密度且具有较小结构尺寸和更精确形状的半导体结构和电子器件。解决方案：半导体结构和电子器件包括至少一层界面介电材料，位于 碳基材料的上表面。 所述至少一层界面介电材料具有与碳基材料相同的短程结晶结合结构，通常是六边形，因此至少一层界面介电材料不会改变 碳基材料的电子结构。 具有与碳基材料相同的短程结晶结合结构的至少一层界面介电材料的存在改善了碳基材料和任何覆盖材料层（包括介电材料）之间的界面结合， 导电材料或介电材料和导电材料的组合。 改进的界面结合又有助于形成包括碳基材料的装置。

公开(公告)号：GB2505351A

公开(公告)日：2014-02-26

申请号：GB201320040

申请日：2012-06-05

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS ,  SHIU KUEN-TING ,  HONG AUGUSTIN J ,  KIM JEEHWAN ,  SADANA DEVENDRA

IPC: H01L31/18 ,  H01L31/0236

Abstract: A method for fabricating a photovoltaic device includes applying (206) a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited (212) on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off (214) and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched (216) using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device.

公开(公告)号：GB2503847B

公开(公告)日：2015-07-01

申请号：GB201318578

申请日：2012-03-05

Applicant: IBM

Inventor： COHEN GUY ,  DIMITRAKOPOULOS CHRISTOS ,  GRILL ALFRED

IPC: H01L29/786 ,  H01L29/775

Abstract: Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

公开(公告)号：GB2503847A

公开(公告)日：2014-01-08

申请号：GB201318578

申请日：2012-03-05

Applicant: IBM

Inventor： COHEN GUY ,  DIMITRAKOPOULOS CHRISTOS ,  GRILL ALFRED

IPC: H01L29/786 ,  H01L29/775

Abstract: Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

公开(公告)号：DE112012001217T5

公开(公告)日：2014-04-10

申请号：DE112012001217

申请日：2012-03-16

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS

IPC: C01B31/04 ,  B32B9/04

Abstract: Es ist ein Streifen aus Graphen mit einer Breite von weniger als 3 nm, bevorzugter mit einer Breite von weniger als 1 nm offenbart. In einer bevorzugteren Ausführungsform sind mehrere Streifen aus Graphen vorhanden, wobei jeder eine Breite mit einer der folgenden Abmessungen aufweist: die Länge von zwei Phenylringen, die zusammengeschmolzen sind, die Länge von drei Phenylringen, die zusammengeschmolzen sind, die Länge von vier Phenylringen, die zusammengeschmolzen sind, und die Länge von fünf Phenylringen, die zusammengeschmolzen sind. In einer weiteren bevorzugten Ausführungsform sind die Kanten der Streifen parallel zueinander. In einer weiteren bevorzugten Ausführungsform weisen die Streifen wenigstens eine Sesselkante auf und können größere Breiten aufweisen. Die Erfindung weist des Weiteren ein Verfahren zum Herstellen eines Streifens aus Graphen auf, das die Schritte aufweist: a. Anordnen von einer oder mehreren polyaromatischen Kohlenwasserstoff(PAH)-Vorläuferverbindungen auf einem Substrat; b. Anwenden von UV-Licht auf den PAH, bis eine oder mehrere intermolekulare Bindungen zwischen benachbarten PAH-Molekülen gebildet sind; und

公开(公告)号：GB2499311B

公开(公告)日：2014-12-17

申请号：GB201300509

申请日：2013-01-11

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS ,  GRILL ALFRED ,  NEUMAYER DEBORAH ANN ,  PFEIFFER DIRK ,  ZHU WENJUAN ,  FARMER DAMON BROOKS ,  LIN YU-MING

IPC: H01L29/786 ,  B82Y40/00 ,  H01L21/02 ,  H01L29/16 ,  H01L29/66

Abstract: A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.

公开(公告)号：GB2505788A

公开(公告)日：2014-03-12

申请号：GB201318887

申请日：2012-03-16

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS

IPC: C01B31/04 ,  H01L29/78

Abstract: Disclosed is a ribbon of graphene less than 3 run wide, more preferably less than 1 nm wide. In a more preferred embodiment, there are multiple ribbons of graphene each with a width of one of the following dimensions: the length of 2 phenyl rings fused together, the length of 3 phenyl rings fused together, the length of 4 phenyl rings fused together, and the length of 5 phenyl rings fused together. In another preferred embodiment the edges of the ribbons are parallel to each other. In another preferred embodiment, the ribbons have at least one arm chair edge and may have wider widths.

公开(公告)号：GB2499311A

公开(公告)日：2013-08-14

申请号：GB201300509

申请日：2013-01-11

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS ,  GRILL ALFRED ,  NEUMAYER DEBORAH ANN ,  PFEIFFER DIRK ,  ZHU WENJUAN ,  FARMER DAMON BROOKS ,  LIN YU-MING

IPC: H01L29/786 ,  B82Y40/00 ,  H01L21/02 ,  H01L29/16 ,  H01L29/66

Abstract: A silicon nitride layer 16 is provided on an uppermost surface of a graphene layer 14 and then a hafnium dioxide layer 18 is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer. The graphene layer can be epitaxially grown on a substrate which may be silicon carbide. The silicon nitride layer may be a tensile silicon nitride layer. A portion of the graphene layer may serve as a channel layer for a FET. The graphene layer may be in contact with source and drain regions of an FET 56, 58. A gate conductor 54 may be located on the hafnium oxide layer. The dielectric bilayer may cover the sides and the top of the source drain regions.