公开(公告)号：WO2006057711A3

公开(公告)日：2006-07-13

申请号：PCT/US2005035596

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  IBM ,  SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  HARA MASAMICHI ,  KUROIWA DAISUKE ,  MALHOTRA SANDRA G ,  MCFEELY FENTON ,  YOUNG ROBERT R JR

Inventor： SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  HARA MASAMICHI ,  KUROIWA DAISUKE ,  MALHOTRA SANDRA G ,  MCFEELY FENTON ,  YOUNG ROBERT R JR

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/16

Abstract: In a solid precursor evaporation system (50, 150, 300, 300') configured for use in a thin film deposition system (1, 100), such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays (330, 340) of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray (330, 340), using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Abstract translation: 在配置用于薄膜沉积系统（1,100）中的固体前驱体蒸发系统（50,150,300,300'）中，例如热化学气相沉积（TCVD），用于制备一个或多个托盘（ 描述了固体前体的形式。 可以使用浸渍技术，旋涂技术和烧结技术中的一种或多种，​​在涂层基材例如托盘（330,340）上形成固体前体。

公开(公告)号：WO2006088562A3

公开(公告)日：2006-12-14

申请号：PCT/US2005047694

申请日：2005-12-30

Applicant: TOKYO ELECTRON LTD ,  IBM ,  GUIDOTTI EMMANUEL P ,  SUZUKI KENJI ,  LEUSINK GERRIT J ,  MCFEELY FENTON

Inventor： GUIDOTTI EMMANUEL P ,  SUZUKI KENJI ,  LEUSINK GERRIT J ,  MCFEELY FENTON

IPC: C23C16/44 ,  C23C16/16

CPC classification number: C23C16/4481 ,  C23C16/16 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565

Abstract: A method and system (1, 100) for improved delivery of a solid precursor (52, 152). A chemically inert coating (43) is provided on internal surfaces (41) in a precursor delivery line (40, 140) to reduce decomposition of a relatively unstable precursor vapor in the precursor delivery line (40, 140), thereby allowing increased delivery of the precursor vapor to a processing zone (33, 133) for depositing a layer on a substrate (25, 125). The solid precursor (52, 152) can, for example, be a ruthenium carbonyl or a rhenium carbonyl. The inert coating (43) can, for example, be a C X F y -containing polymer, such as polytetrafluoroethylene or ethylene­chlorotrifluoroethylene. Other benefits of using an inert coating (43) include easy periodic cleaning of deposits from the precursor delivery line (40, 140).

Abstract translation: 一种用于改进固体前体（52,152）的输送的方法和系统（1,100）。 在前体输送管线（40,140）的内表面（41）上提供化学惰性涂层（43）以减少前体输送管线（40,140）中相对不稳定的前体蒸气的分解，从而允许增加 所述前体蒸汽通向用于在衬底（25,125）上沉积层的处理区（33,133）。 固体前体（52,152）可以例如是羰基钌或羰基铼。 惰性涂层（43）可以例如是含有聚合物的聚合物，例如聚四氟乙烯或乙烯 - 三氟氯乙烯。 使用惰性涂层（43）的其他益处包括易于定期清洁来自前体输送管线（40,140）的沉积物。

公开(公告)号：AU2002357054A1

公开(公告)日：2003-06-10

申请号：AU2002357054

申请日：2002-11-27

Applicant: IBM

Inventor： KIM HYUNGJUN ,  MCFEELY FENTON ,  NARAYANAN VIJAY ,  RODBELL KENNETH ,  YURKAS JOHN ,  AMOS RICKY ,  BUCHANAN DOUGLAS ,  CABRAL CYRIL JR ,  CALLEGARI ALESSANDRO ,  GUHA SUPRATIK

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/30 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76

Abstract: A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10 as the source material is used when Re is to be deposited.

公开(公告)号：AT519870T

公开(公告)日：2011-08-15

申请号：AT05807544

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  IBM

Inventor： SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT ,  MCFEELY FENTON ,  MALHOTRA SANDRA G

IPC: C23C16/16

Abstract: A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.