公开(公告)号：EP2377148A4

公开(公告)日：2016-03-16

申请号：EP09836605

申请日：2009-11-19

Applicant: IBM ,  FREESCALE SEMICONDUCTOR INC

Inventor： RAMACHANDRAN RAVIKUMAR ,  YAN HONGWEN ,  MOUMEN NAIM ,  SCHAEFFER JAMES KENYON ,  KRISHNAN SIDDARTH A ,  WONG KEITH KWONG HON ,  KWON UNOH ,  BELYANSKY MICHAEL P ,  WISE RICHARD

IPC: H01L21/3205 ,  H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/823857

公开(公告)号：WO2007039374A3

公开(公告)日：2007-07-05

申请号：PCT/EP2006065995

申请日：2006-09-05

Applicant: IBM ,  IBM UK ,  HOLMES STEVEN ,  FURUKAWA TOSHIHARU ,  KOBURGER CHARLES III ,  MOUMEN NAIM

Inventor： HOLMES STEVEN ,  FURUKAWA TOSHIHARU ,  KOBURGER CHARLES III ,  MOUMEN NAIM

IPC: G03F7/20 ,  G03F7/11

CPC classification number: G03F7/2041 ,  G03F7/11 ,  G03F7/70341 ,  G03F7/70958

Abstract: An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.

Abstract translation: 提供浸没式光刻系统，其包括可操作以产生具有标称波长的光的光源和光学成像系统。 光学成像系统在从光源到要被图案化的物品的光路中具有光学元件。 光学元件具有适于接触占据面部和物品之间的空间的液体的面。 光学元件包括可通过液体降解的材料和覆盖可降解材料的表面以保护表面免受液体影响的保护涂层，保护涂层对光线是透明的，当暴露于光时稳定并且稳定时 暴露于液体。

公开(公告)号：EP2415073A4

公开(公告)日：2013-09-11

申请号：EP10759255

申请日：2010-03-29

Applicant: IBM

Inventor： BU HUIMING ,  CHUDZIK MICHAEL P ,  HE WEI ,  JHA RASHMI ,  KIM YOUNG-HEE ,  KRISHNAN SIDDARTH A ,  MO RENEE T ,  MOUMEN NAIM ,  NATZLE WESLEY C

IPC: H01L29/51 ,  H01L21/28 ,  H01L21/336 ,  H01L29/49

CPC classification number: H01L21/28202 ,  H01L21/28176 ,  H01L21/28185 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：WO2007039374B1

公开(公告)日：2007-08-30

申请号：PCT/EP2006065995

申请日：2006-09-05

Applicant: IBM ,  IBM UK ,  HOLMES STEVEN ,  FURUKAWA TOSHIHARU ,  KOBURGER CHARLES III ,  MOUMEN NAIM

Inventor： HOLMES STEVEN ,  FURUKAWA TOSHIHARU ,  KOBURGER CHARLES III ,  MOUMEN NAIM

IPC: G03F7/20 ,  G03F7/11

CPC classification number: G03F7/2041 ,  G03F7/11 ,  G03F7/70341 ,  G03F7/70958

Abstract: An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.

Abstract translation: 提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。 光学成像系统具有从光源到待图案化的制品的光路中的光学元件。 光学元件具有适于接触占据面部和制品之间的空间的液体的面。 光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时 暴露于液体。

公开(公告)号：JP2004336049A

公开(公告)日：2004-11-25

申请号：JP2004135830

申请日：2004-04-30

Applicant: Infineon Technol North America Corp ,  Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation ,  インフィニオン テクノロジーズ ノース アメリカ コーポレイション Infineon Technologies North America Corp.

Inventor： BEINTNER JOCHEN ,  LI YUJUN ,  MOUMEN NAIM ,  WRSCHKA PORSHIA SHANE

IPC: H01L29/423 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/6659 ,  H01L21/26586 ,  H01L21/28044 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/49 ,  H01L29/665 ,  Y10S438/933

Abstract: PROBLEM TO BE SOLVED: To provide a structure and manufacturing method of a notch gate field effect transistor which can cope with a problem of device (element) reliability.
SOLUTION: A gate dielectric 14 (for example, gate oxide film) is preferably formed on a surface of an active field 10 on a semiconductor substrate defined by a separation trench area 12. Next, a polysilicon layer 16 is accumulated on the gate dielectric. After the above process, a silicon germanium (SiGe) layer 18 is accumulated. Next, a side wall of the polysilicon layer is selectively etched in the transverse direction against the SiGe layer, and a notch gate conductor structure having the SiGe layer wider than the polysilicon layer thereunder is formed. A side wall spacer 26 is formed preferably on the side wall of the SiGe layer and the polysilicon layer. In order to reduce the resistance of a gate conductor 24, preferably, a silicide layer 28 is formed as self-alignment silicide from the polysilicon layer accumulated on the SiGe layer.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：WO2011061043A3

公开(公告)日：2011-10-27

申请号：PCT/EP2010066149

申请日：2010-10-26

Applicant: IBM ,  MOUMEN NAIM ,  MARTIN YVES ,  VAN KESSEL THEODORE GERARD ,  SANDSTROM ROBERT ,  GUHA SUPRATIK

Inventor： MOUMEN NAIM ,  MARTIN YVES ,  VAN KESSEL THEODORE GERARD ,  SANDSTROM ROBERT ,  GUHA SUPRATIK

IPC: H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/02245 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: Electrical contact to the front side of a photovoltaic cell is provided by an array of conductive through-substrate vias, and optionally, an array of conductive blocks located on the front side of the photovoltaic cell. A dielectric liner provides electrical isolation of each conductive through-substrate via from the semiconductor material of the photovoltaic cell. A dielectric layer on the backside of the photovoltaic cell is patterned to cover a contiguous region including all of the conductive through-substrate vias, while exposing a portion of the backside of the photovoltaic cell. A conductive material layer is deposited on the back surface of the photovoltaic cell, and is patterned to form a first conductive wiring structure that electrically connects the conductive through-substrate vias and a second conductive wiring structure that provides electrical connection to the backside of the photovoltaic cell.

Abstract translation: 到光伏电池正面的电接触由导电的直通基板通孔阵列提供，并且可选地，位于光伏电池正面上的导电块阵列提供。 电介质衬垫提供每个导电贯穿衬底通孔与光伏电池的半导体材料的电隔离。 在光伏电池的背面上的电介质层被图案化以覆盖包括所有导电的贯穿衬底通孔的连续区域，同时暴露光伏电池的背面的一部分。 导电材料层被沉积在光伏电池的后表面上，并且被图案化以形成第一导电布线结构，其电连接导电贯穿基板通孔和第二导电布线结构，该第二导电布线结构提供到光伏电池的后侧的电连接 细胞。

公开(公告)号：WO2008106244A3

公开(公告)日：2010-03-18

申请号：PCT/US2008051067

申请日：2008-01-15

Applicant: IBM ,  CHUDZIK MICHAEL P ,  HE WEI ,  MO RENEE T ,  MOUMEN NAIM ,  NARAYANAN VIJAY ,  PARK DAE-GYU ,  PARUCHURI VAMSI K

Inventor： CHUDZIK MICHAEL P ,  HE WEI ,  MO RENEE T ,  MOUMEN NAIM ,  NARAYANAN VIJAY ,  PARK DAE-GYU ,  PARUCHURI VAMSI K

IPC: H01L21/335

CPC classification number: H01L21/823807 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/78 ,  H01L29/7845

Abstract: A gate structure (200) for complementary metal oxide semiconductor (CMOS) devices includes a first gate stack (116) having a first gate dielectric layer (102) formed over a substrate (100), and a first metal layer (106) formed over the first gate dielectric layer. A second gate stack (118) includes a second gate dielectric layer (102) formed over the substrate and a second metal layer (110) formed over the second gate dielectric layer. The first metal layer is formed in manner so as to impart a tensile stress on the substrate, and the second metal layer is formed in a manner so as to impart a compressive stress on the substrate.

Abstract translation: 用于互补金属氧化物半导体（CMOS）器件的栅极结构（200）包括具有形成在衬底（100）上的第一栅极电介质层（102）的第一栅极堆叠（116）和形成在衬底 第一栅介质层。 第二栅极堆叠（118）包括形成在衬底上的第二栅极电介质层（102）和形成在第二栅极电介质层上的第二金属层（110）。 第一金属层形成为在基板上施加拉伸应力，并且第二金属层以使得在基板上施加压应力的方式形成。

公开(公告)号：DE112010004501T5

公开(公告)日：2012-10-31

申请号：DE112010004501

申请日：2010-10-26

Applicant: IBM

Inventor： MARTIN YVES C ,  SANDSTROM ROBERT L ,  MOUMEN NAIM ,  VAN KESSEL THEODORE GERARD ,  GUHA SUPRATIK

IPC: H01L31/0224 ,  H01L31/068

Abstract: Durch eine Anordnung von leitenden Durchkontaktierungen durch ein Substrat und optional durch eine Anordnung von leitenden Blöcken, die sich auf der Vorderseite einer Photovoltaikzelle befindet, wird ein elektrischer Kontakt mit der Vorderseite der Photovoltaikzelle bereitgestellt. Eine dielektrische Auskleidung stellt eine elektrische Trennung jeder leitenden Durchkontaktierung durch das Substrat gegenüber dem Halbleitermaterial der Photovoltaikzelle bereit. Eine dielektrische Schicht auf der Rückseite der Photovoltaikzelle ist so strukturiert, dass sie einen zusammenhängenden Bereich abdeckt, der alle leitenden Durchkontaktierungen durch das Substrat beinhaltet, während sie einen Abschnitt der Rückseite der Photovoltaikzelle freilegt. Eine Schicht eines leitenden Materials wird auf der Rückfläche der Photovoltaikzelle abgeschieden und so strukturiert, dass sie eine erste leitende Verdrahtungsstruktur, die die leitenden Durchkontaktierungen durch das Substrat elektrisch verbindet, und eine zweite leitende Verdrahtungsstruktur ausbildet, die eine elektrische Verbindung mit der Rückfläche der Photovoltaikzelle bereitstellt.

公开(公告)号：AT552533T

公开(公告)日：2012-04-15

申请号：AT06793213

申请日：2006-09-05

Applicant: IBM

Inventor： HOLMES STEVEN ,  FURUKAWA TOSHIHARU ,  KOBURGER CHARLES ,  MOUMEN NAIM

IPC: G03F7/20 ,  G03F7/11

Abstract: An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.

公开(公告)号：RU2498446C2

公开(公告)日：2013-11-10

申请号：RU2011132473

申请日：2009-11-19

Applicant: IBM ,  FRISKEJL SEMIKONDAKTOR INK

Inventor： RAMACHANDRAN RAVIKUMAR ,  JAN KHUNVEHN ,  MOUMEN NAIM ,  SHEHFFER DZHEJMS KENION ,  KRISHNAN SIDDART A ,  VON KEJT KVON KHON ,  KVON UNOKH ,  BELJANSKI MAJKL P ,  UAJZ RICHARD

IPC: H01L21/3205 ,  B82B3/00

Abstract: Изобретениеотноситсяк получениюмногослойнойзатворнойструктурыдляполевоготранзистора. Сущностьизобретения: способполучениямногослойнойзатворнойструктурыдляполевыхтранзистороввключаетформированиеметаллсодержащегослоянепосредственнонапервомслоенитридатитана TiN, покрывающемобластиполупроводниковойподложки, предназначенныедляпервогои второготиповполевыхтранзисторов, формированиезащитногослояпутемнанесениявторого TiN-слояповерхметаллсодержащегослоя, формированиерисунканавтором TiN-слоеи металлсодержащемслоедляпокрытиятолькопервойчастипервого TiN-слоя, покрывающейобласть, предназначеннуюдляполевыхтранзисторовпервоготипа, вытравливаниевторойчастипервого TiN-слоя, оставшейсяоткрытойприформированиирисунка, втовремякакперваячастьпервого TiN-слояостаетсязащищеннойоттравлениязасчетеезакрытияпоменьшеймеречастьютолщиныметаллсодержащегослоя, накоторомсформированрисунок, иформированиетретьего TiN-слоя, покрывающегообластьполупроводниковойподложки, предназначеннуюдлявтороготипаполевыхтранзисторов. Изобретениеобеспечиваетусовершенствованиетехнологииполучениямногослойнойзатворнойструктуры. 3 н. и 24 з.п. ф-лы, 9 ил.