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    INTEGRATED SEMICONDUCTOR PRODUCT COMPRISING A METAL-INSULATOR-METAL CAPACITOR
    1.
    发明专利
    INTEGRATED SEMICONDUCTOR PRODUCT COMPRISING A METAL-INSULATOR-METAL CAPACITOR 未知

    公开(公告)号：AU2002358618A1

    公开(公告)日：2003-07-09

    申请号：AU2002358618

    申请日：2002-12-05

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHRENK MICHAEL ,  KOLLER KLAUS ,  KORNER HEINRICH

    IPC: H01L21/02 ,  H01L21/768 ,  H01G4/12 ,  H01G4/08 ,  H01L29/92

    Abstract: To fabricate an integrated semiconductor product with integrated metal-insulator-metal capacitor, first of all a dielectric auxiliary layer ( 6 ) is deposited on a first electrode ( 2, 3, 5 ). This auxiliary layer ( 6 ) is then opened up ( 15 ) via the first electrode. Then, a dielectric layer ( 7 ) is produced, and the metal track stack ( 8, 9, 10 ) for the second electrode is then applied to the dielectric layer ( 6 ). This is followed by the patterning of the metal-insulator-metal capacitor using known etching processes. This makes it possible to produce dielectric capacitor layers of any desired thickness using materials which can be selected as desired. In particular, this has the advantage that via etches can be carried out significantly more easily than in the prior art, since it is not necessary to etch through the residual dielectric capacitor layer above the metal tracks.

    6.
    发明专利
    未知

    公开(公告)号：DE10161286A1

    公开(公告)日：2003-07-03

    申请号：DE10161286

    申请日：2001-12-13

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHRENK MICHAEL ANTON ,  KOLLER KLAUS ,  KOERNER HEINRICH

    IPC: H01L21/02 ,  H01L21/768 ,  H01L27/08 ,  H01L29/92

    Abstract: To produce an integrated semiconductor product comprising an integrated metal-insulator-metal capacitor, a dielectric auxiliary layer (6) is first deposited on a first electrode (2, 3, 5). Said auxiliary layer (6) is then opened over the first electrode (15). A dielectric layer (7) is then created, onto which the stack (8, 9, 10) of metal strips for the second electrode is applied. The metal-insulator-metal capacitor is subsequently patterned using conventional etching technology. This allows the production of dielectric capacitor layers comprising freely selectable materials of any thickness. The particular advantage of the invention is that the etching of vias can be carried out in a significantly simpler manner than in prior art, as it is not necessary to etch through the remaining dielectric capacitor layer over the metal strips.

    7.
    发明专利
    未知

    公开(公告)号：DE102006036076A1

    公开(公告)日：2008-02-07

    申请号：DE102006036076

    申请日：2006-08-02

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AHRENS CARSTEN ,  FOERG RAIMUND ,  KOLLER KLAUS ,  SUBKE KAI-OLAF

    IPC: H01L21/822 ,  H01L27/08

    Abstract: A capacitor device includes a substrate, a first conductive structure, a second conductive structure, a dielectric layer structure, and a recess in the substrate. The first and second conductive structures are disposed on opposite sides of the dielectric layer structure, and the dielectric layer structure extends in a meander-shaped manner in a cross-section through the recess.

    Halbleiterbauelement-Teststrukturen, Verwendung und Herstellungsverfahren
    8.
    发明专利
    Halbleiterbauelement-Teststrukturen, Verwendung und Herstellungsverfahren 未知

    公开(公告)号：DE102008000217B4

    公开(公告)日：2013-04-11

    申请号：DE102008000217

    申请日：2008-02-01

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WALTER WOLFGANG ,  KOLLER KLAUS

    IPC: H01L23/544 ,  G01R31/26 ,  H01L21/66 ,  H01L21/768

    Abstract: Teststruktur (100), umfassend: eine Speiseleitung (104a), die in einer ersten leitenden Materialschicht (M1) angeordnet ist, und eine Stressleitung (104b), die in der ersten leitenden Materialschicht (M1) benachbart der Speiseleitung (104a), aber von der Speiseleitung (104a) beabstandet, angeordnet ist, wobei die Stressleitung (104b) an die Speiseleitung (104a) durch ein leitendes Strukturmerkmal (108a, 108b, 112, 108c) gekoppelt ist, das in mindestens einer zweiten leitenden Materialschicht (V1) benachbart der ersten leitenden Materialschicht (M1) angeordnet ist, wobei die Speiseleitung (104a) eine Länge im Bereich von etwa 20 Mikrometer bis 80 Mikrometer hat.

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