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公开(公告)号:DE10154505A1
公开(公告)日:2003-05-15
申请号:DE10154505
申请日:2001-11-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZUCKERSTAETTER ANDREA , SCHAEFER ANDRE
Abstract: A memory device includes a memory module, a control unit and a bus connected to the memory module and the control unit. In an accessing operation of the memory module via bus, the control unit applies a first command which causes high power consumption in the memory module, to the memory module via part of the bus only.
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公开(公告)号:DE10137373A1
公开(公告)日:2003-02-20
申请号:DE10137373
申请日:2001-07-31
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SCHNABEL JOACHIM , KLEHN BERND , ZUCKERSTAETTER ANDREA , KLEIN RALF
IPC: G11C7/10 , H03K3/027 , G01R31/3177
Abstract: A control signal and an activation signal are applied to a control signal connection unit (100) and an activation connection unit (101), respectively. A hold signal generated in response to the activation signal, is combined with the control signal to obtain a modified control signal. An Independent claim is also included for control signal generating device.
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公开(公告)号:DE10140761B4
公开(公告)日:2004-08-26
申请号:DE10140761
申请日:2001-08-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZUCKERSTAETTER ANDREA , SCHAEFER ANDRE
IPC: H01L21/673 , H01L21/687 , H01L21/68
Abstract: The present invention provides a wafer handling device having a base plate (G; G'), which has a first and a second supporting surface for a respective wafer (W1, W2) to be laid on; and a fixing device (K1, K2, S; K1', K2', S') for the detachable fixing of the respective wafer (W1, W2) on the first and second supporting surface; the fixing device (K1, K2, S; K1', K2', S') being configured in such a way that it contacts the respective wafer (W1, W2) only in the outer edge region of the side facing away from the supporting surface.
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公开(公告)号:DE10137373B4
公开(公告)日:2004-01-29
申请号:DE10137373
申请日:2001-07-31
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SCHNABEL JOACHIM , KLEHN BERND , ZUCKERSTAETTER ANDREA , KLEIN RALF
IPC: G11C7/10 , H03K3/027 , G01R31/3177
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公开(公告)号:DE10140761A1
公开(公告)日:2003-03-13
申请号:DE10140761
申请日:2001-08-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZUCKERSTAETTER ANDREA , SCHAEFER ANDRE
IPC: H01L21/673 , H01L21/687 , H01L21/68
Abstract: The present invention provides a wafer handling device having a base plate (G; G'), which has a first and a second supporting surface for a respective wafer (W1, W2) to be laid on; and a fixing device (K1, K2, S; K1', K2', S') for the detachable fixing of the respective wafer (W1, W2) on the first and second supporting surface; the fixing device (K1, K2, S; K1', K2', S') being configured in such a way that it contacts the respective wafer (W1, W2) only in the outer edge region of the side facing away from the supporting surface.
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公开(公告)号:DE10154505B4
公开(公告)日:2006-11-16
申请号:DE10154505
申请日:2001-11-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZUCKERSTAETTER ANDREA , SCHAEFER ANDRE
Abstract: A memory device includes a memory module, a control unit and a bus connected to the memory module and the control unit. In an accessing operation of the memory module via bus, the control unit applies a first command which causes high power consumption in the memory module, to the memory module via part of the bus only.
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公开(公告)号:DE10254076A1
公开(公告)日:2004-02-19
申请号:DE10254076
申请日:2002-11-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZUCKERSTAETTER ANDREA , PFEIFFER JOHANN
IPC: G11C11/406 , G11C11/4076 , G11C29/00
Abstract: The DRAM circuit has memory cells and an access controller, a refresh device and a trim circuit for adjusting the refresh oscillator frequency to a desired value with an electrically programmable trim circuit in which fuse elements of a frequency-determining network are selectively changed from an unset state to a set state by applying an overvoltage and a fuse selection device for connecting an overvoltage source in accordance with selection. The Dynamic Random Access Memory or DRAM circuit has a number of memory cells (21) and an access controller (22), a refresh device (24) and a trim device (30,40,60,70) for adjusting the refresh oscillator (25) frequency to a desired value with an electrically programmable trim circuit (30) in which fuse elements of a frequency-determining network are selectively changed from an unset state to a set state by applying an overvoltage and a fuse selection device (70) for connecting an overvoltage source in accordance with selection data. AN Independent claim is also included for the following: (a) a method of adjusting the oscillation frequency of the refresh oscillator for a DRAM circuit.
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公开(公告)号:DE102004055457A1
公开(公告)日:2006-05-24
申请号:DE102004055457
申请日:2004-11-17
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZUCKERSTAETTER ANDREA , MERGENTHALER MAX
IPC: G06F17/50 , G06F11/273
Abstract: Method for checking a circuit layout for a semiconductor apparatus, including: (a) recording a circuit layout which has been created; (b) carrying out a test to determine whether predeterminable conditions are satisfied in the circuit layout; (c) if at least one predeterminable condition is not satisfied, (c1) determining position data for the at least one circuit part of the circuit layout for which at least one predeterminable condition is not satisfied; and (d) carrying out a simulation for the at least one circuit part determined in step (c), in order to obtain a simulation result.
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公开(公告)号:DE10241142A1
公开(公告)日:2004-03-25
申请号:DE10241142
申请日:2002-09-05
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZUCKERSTAETTER ANDREA , PFEIFFER JOHANN
IPC: G11C7/10 , G11C7/00 , G11C11/407
Abstract: The memory device has at least two memory cell arrays (13a,13b,13c,13d) connected to respective array logic circuitry (19a,19b,19c,19d). Data terminals or interface circuits (18a,18b) connected to them are directly connected to the respective array logic circuit.
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公开(公告)号:DE10208611A1
公开(公告)日:2003-05-22
申请号:DE10208611
申请日:2002-02-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SOMMER MICHAEL , FISCHER HELMUT , ZUCKERSTAETTER ANDREA
IPC: G11C11/406 , G11C11/408
Abstract: The digital memory or dynamic random access memory (DRAM) device has a refresh control device (13a-13f,14) that is designed to carry out a refresh cycle in the form of successive sub-cycles, whereby in at least one of these sub-cycles word lines of at least two non-adjacent segments in each segment group are sequentially activated simultaneously.
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