APPARATUS AND METHOD FOR CONTROLLING PLASMA DENSITY PROFILE
    2.
    发明申请
    APPARATUS AND METHOD FOR CONTROLLING PLASMA DENSITY PROFILE 审中-公开
    控制等离子体密度分布的装置和方法

    公开(公告)号:WO2007078572A3

    公开(公告)日:2009-02-05

    申请号:PCT/US2006046780

    申请日:2006-12-08

    CPC classification number: H01J37/32082 H01J37/32174

    Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

    Abstract translation: 多个RF功率传输路径被定义为从RF电源通过匹配网络,通过发射电极,等离子体延伸到多个返回电极。 多个调谐元件分别设置在RF功率传输路径的数量内。 每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。 特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。 因此,由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

    VACUUM PLASMA PROCESSOR INCLUDING CONTROL IN RESPONSE TO DC BIAS VOLTAGE
    3.
    发明申请
    VACUUM PLASMA PROCESSOR INCLUDING CONTROL IN RESPONSE TO DC BIAS VOLTAGE 审中-公开
    真空等离子体处理器包括对直流偏置电压的响应控制

    公开(公告)号:WO2005119731A3

    公开(公告)日:2006-05-26

    申请号:PCT/US2005018094

    申请日:2005-05-25

    Abstract: A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.

    Abstract translation: 等离子体处理器室包括底电极和顶电极组件,其具有被接地电极包围的中心电极。 电极之间的RF激发等离子体在其上引起DC偏压。 底部电极直流偏置的测量控制连接在中心电极和地之间的第一串联谐振电路的电容。 中心电极直流偏压的测量控制连接在底电极和地之间的第二串联谐振电路的电容。

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