Abstract:
A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies.
Abstract:
A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.
Abstract:
A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.
Abstract:
A workpiece (18) is processed with a plasma (8) in a vacuum plasma processing chamber (10) by exciting the plasma at several frequencies (51, 52, 54, 56, 58), such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes top central (14, 36, 36a) and bottom electrodes (13, 16) and a peripheral top (42) and/or bottom electrode (34) arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies. Controller 24 is employed to direct parameter control of various motors (M), valves (V), frequencies (58), power (59), temperature control means (25, 45) and set points (50).
Abstract:
A method of processing a workpiece (18) with a plasma in a vacuum plasma processing chamber (10) having a bottom electrode (13) below the workpiece, comprising the step of exciting a plasma with electric energy at several frequencies, i.e. three or more, such that the excitation of the plasma by applying energy at the several frequencies simultaneously causes several different phenomena to occur in the plasma, wherein the phenomena affct plasma ion energy, plasma ion densityand plasma chemistry. An apparatus for carrying out this method comprises an electric energy source arrangement (51) for supplying the several frequencies (F1, F2, F3) to the bottom electrode.