公开(公告)号：JP2009016825A

公开(公告)日：2009-01-22

申请号：JP2008167248

申请日：2008-06-26

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： MUELLER MARTIN ,  GROENNINGER GUENTHER ,  BEHRES ALEXANDER

IPC: H01S5/323

CPC classification number: H01S5/4043 ,  H01S5/3095 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/4018

Abstract: PROBLEM TO BE SOLVED: To provide a monolithic integration type laser diode chip wherein its local distortion and its lattice mismatch are so reduced between its GaAs semiconductor substrate and its waveguide layer or its clad layer as to delay its degradation and as to improve its life time.
SOLUTION: The monolithic integration type laser diode chip is the one wherein it has at least two laser laminates on a GaAs semiconductor substrate, and each laminate includes each one active region interposed between waveguides, and further, each waveguide is adjacent to one clad layer on the opposite side to each active region. Further, in the laser diode chip, at least one of the waveguide layer and the clad layer which are present in at least the one laser laminate, has Al
x Ga
1x As (0≤x≤1, in the formula) and has at least one main group III additional element or one main group V additional element. Moreover, in the laser diode chip, the lattice mismatch present between the GaAs-possessed semiconductor substrate and at least the one waveguide layer or the one clad layer is reduced.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种单片集成型激光二极管芯片，其中局部失真及其晶格失配在其GaAs半导体衬底与其波导层或其包层之间如此减小，以延缓其劣化并改善 它的生活时间。 解决方案：单片集成型激光二极管芯片是其中在GaAs半导体衬底上具有至少两个激光层压板的激光二极管芯片，并且每个层压板包括介于波导之间的每个有源区域，此外，每个波导与一个 在每个有源区域的相对侧上。 此外，在激光二极管芯片中，存在于至少一个激光层叠体中的波导层和包覆层中的至少一个具有Al x SB （式中0≤x≤1），并且具有至少一个主要III族附加元素或一个主要V族附加元素。 此外，在激光二极管芯片中，GaAs所拥有的半导体衬底和至少一个波导层或一个覆盖层之间存在的晶格失配减小。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007103930A

公开(公告)日：2007-04-19

申请号：JP2006262661

申请日：2006-09-27

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： LINDER NORBERT ,  GROENNINGER GUENTHER ,  HEIDBORN PETER ,  STREUBEL KLAUS ,  KUGLER SIEGMAR

IPC: H01L21/205 ,  H01L31/0264 ,  H01L33/02 ,  H01L33/04 ,  H01L33/30 ,  H01S5/02 ,  H01S5/323 ,  H01S5/327

CPC classification number: H01L33/04 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L33/025 ,  H01L33/30

Abstract: PROBLEM TO BE SOLVED: To provide an improved quasi-substrate having a lattice constant lower than the lattice constant of GaAs, and a semiconductor device comprising the quasi-substrate. SOLUTION: On a semiconductor substrate (1) made of GaAs, semiconductor layer arrangements (2, 13, 14, and 35) are given. The semiconductor layer arrangements (2, 13, 14, and 35) comprise many semiconductor layers of Al 1-y Ga y As 1-x P x [in the formula, 0≤x≤1, 0≤y≤1]. In this regard, some semiconductor layers comprise phosphorous proportion x. The proportion is larger than proportion in an adjacent semiconductor layer both in the growth direction of the semiconductor layer arrangement and under it. The invention comprises a semiconductor device comprising the substrate. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供具有低于GaAs的晶格常数的晶格常数的改进的准衬底，以及包括准衬底的半导体器件。 解决方案：在由GaAs制成的半导体衬底（1）上，给出半导体层布置（2,13,14和35）。 半导体层布置（2,13,14和35）包括许多半导体层，其中，Al 1-x P x 在式中，0≤x≤1,0≤y≤1]。 在这方面，一些半导体层包括磷比例x。 在半导体层布置的生长方向和其下方的相邻半导体层中的比例大于比例。 本发明包括一种包括该衬底的半导体器件。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：DE10135574B4

公开(公告)日：2009-09-10

申请号：DE10135574

申请日：2001-07-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROENNINGER GUENTHER ,  HEIDBORN PETER

IPC: C30B19/06

公开(公告)号：DE102007057708A1

公开(公告)日：2009-04-09

申请号：DE102007057708

申请日：2007-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  GROENNINGER GUENTHER ,  HEIDBORN PETER ,  STREUBEL KLAUS ,  KUGLER SIEGMAR

IPC: H01L33/06 ,  H01L33/30 ,  H01S5/34

Abstract: The component has a radiation-emitting active layer (1) arranged between barrier layers (2), where the active layer and the barrier layers are made of respective indium-aluminum-gallium-phosphide combinations. The barrier layers include a wide electronic bandgap than the active layer. The barrier layers and the active layer include respective grating constants, which are smaller around 0.2 percentages or 1 percentage than the grating constants of gallium arsenide. Parameters of the active layer are selected such that the active layer includes a direct bandgap.

公开(公告)号：DE102006039369A1

公开(公告)日：2007-07-05

申请号：DE102006039369

申请日：2006-08-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HEIDBORN PETER ,  WEGLEITER WALTER ,  GROENNINGER GUENTHER ,  WINDISCH REINER ,  JUNG CHRISTIAN

IPC: H01L33/00 ,  H01L33/08

Abstract: The LED semiconductor body (1) has two radiation-generating active layers. The two active layers (2,3) are arranged one above another in a vertical direction. The active layers are monolithically integrated in the semiconductor body.

公开(公告)号：DE10135574A1

公开(公告)日：2003-02-06

申请号：DE10135574

申请日：2001-07-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROENNINGER GUENTHER ,  HEIDBORN PETER

IPC: C30B19/06

Abstract: A process for producing layer structures on substrates using liquid phase epitaxy comprises arranging a number of substrate plates (2) into a stack so they are parallel, then swiveling the plates out of the horizontal. A melt or a solution is applied to the stack to form a layer material and the stack is then swiveled back to the horizontal. A layer is then precipitated onto the plates from the melt or the solution, then the plates are swiveled out of the horizontal to let the melt or solution run off.

公开(公告)号：DE102007046522A1

公开(公告)日：2009-04-02

申请号：DE102007046522

申请日：2007-09-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  GROENNINGER GUENTHER

IPC: H01L33/04

Abstract: The semiconductor body comprises a semiconductor layer sequence. A thin film diode (2) is provided with an active area for generating radiation. The active area is provided between two doping areas. A tunnel diode (10) is arranged on one of the doping areas, where the tunnel diode is connected with the electrically conducting thin film diode. An independent claim is included for a method for manufacturing a semiconductor body.

公开(公告)号：DE102007030062A1

公开(公告)日：2009-01-02

申请号：DE102007030062

申请日：2007-06-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： MUELLER MARTIN ,  GROENNINGER GUENTHER ,  BEHRES ALEXANDER

IPC: H01S5/40 ,  H01S5/20 ,  H01S5/343

Abstract: The monolithically integrated laser diode chip structured as multi-beam laser diode, comprises laser stacks (4a, 4b, 4c) arranged one above the other on a semiconductor substrate (3) made of gallium arsenide of same lattice parameter, where the laser stacks contain an active zone, which is arranged between two waveguide layers. The laser stacks are connected by tunnel transitions (5). The waveguide layers are adjoined on coat layers at a side turned to the active zone. The monolithically integrated laser diode chip structured as multi-beam laser diode, comprises laser stacks (4a, 4b, 4c) arranged one above the other on a semiconductor substrate (3) made of gallium arsenide of same lattice parameter, where the laser stacks contain an active zone, which is arranged between two waveguide layers. The laser stacks are connected by tunnel transitions (5). The waveguide layers are adjoined on coat layers at a side turned to the active zone. One of the waveguide layers or coat layers comprise Al xGa 1 - xAs, where x is 0-1, and an additional element of III or V main group (15%), so that it reduces the lattice mismatch between the waveguide layer or coat layer with the additional element and the semiconductor substrate. The lattice parameter of the waveguide layer or coat layer is reduced by the additional element. The waveguide layer or coat layer has the additional element in different concentrations. The additional element is spatially varied within the waveguide layer or coat layer.

公开(公告)号：DE102006035627A1

公开(公告)日：2008-02-07

申请号：DE102006035627

申请日：2006-07-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： JUNG CHRISTIAN ,  HEIDBORN PETER ,  BEHRES ALEXANDER ,  GROENNINGER GUENTHER

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/46

Abstract: An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least one barrier layer, wherein the quantum layer and the barrier layer are strained with mutually opposite mathematical signs.

公开(公告)号：DE102009041934A1

公开(公告)日：2011-03-24

申请号：DE102009041934

申请日：2009-09-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GOMEZ-IGLESIAS ALVARO ,  LAUER CHRISTIAN ,  GROENNINGER GUENTHER ,  KOENIG HARALD

IPC: H01S5/34 ,  H01S5/20

Abstract: Es wird ein kantenemittierender Halbleiterlaser mit einer aktiven, strahlungserzeugenden Zone (1), und einem Gesamtwellenleiter (8) offenbart, der dazu geeignet ist, die in der aktiven Zone (1) erzeugte Strahlung innerhalb des Halbleiterlasers zu führen. Der Gesamtwellenleiter (8) umfasst eine erste n-dotierte Schicht (4) und eine zweite n-dotierte Schicht (5), die zwischen der ersten n-dotierten Schicht (4) und der aktiven Zone (1) angeordnet ist, wobei der Brechungsindex nder zweiten n-dotierten Schicht (5) um einen Betrag dn größer ist als der Brechungsindex nder ersten n-dotierten Schicht (4).