公开(公告)号：CA2360502A1

公开(公告)日：2001-05-31

申请号：CA2360502

申请日：2000-11-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  EISERT DOMINIK ,  BADER STEFAN ,  BOLAY HELMUT ,  ZEHNDER ULRICH ,  LELL ALFRED ,  STRAUSS UWE ,  LUGAUER HANS-JURGEN ,  WEIMAR ANDREAS ,  HARLE VOLKER ,  VOLKL JOHANNES

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

Abstract: The invention relates to an optical semiconductor device comprising a multip le quantum well structure, in which well layers and barrier layers consisting o f different types of semiconductor layers are stacked alternately on top of on e another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation t o the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together wit h the barrier layers (6b) form a superlattice for said active quantum well lay er.