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1.发明专利Method of manufacturing optical semiconductor device, and optical semiconductor device 有权制造光学半导体器件的方法和光学半导体器件
公开(公告)号：JP2011035433A
公开(公告)日：2011-02-17
申请号：JP2010256649
申请日：2010-11-17
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS-JURGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
CPC classification number: H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor device capable of improving quantum efficiency. SOLUTION: An indium content of at least one well layer is increased in a step of growing the well layer. In the optical semiconductor device, the well layer has a first composition based on a nitride semiconductor material with first electron energy, and a barrier layer has a second composition based on the nitride semiconductor material with second electron energy higher than the first electron energy. A beam activated quantum well layer is grown on the barrier layer. Non-radiative well layers and the barrier layers form a superlattice for the beam activated quantum well layer. The layer thickness of the beam activated quantum well layer is larger than the layer thickness of the well layer of the superlattice. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：提供一种能够提高量子效率的制造光半导体器件的方法。 解决方案：在生长阱层的步骤中增加至少一个阱层的铟含量。 在光半导体器件中，阱层具有基于具有第一电子能的氮化物半导体材料的第一组成，并且阻挡层具有基于具有高于第一电子能的第二电子能的氮化物半导体材料的第二组成。 光束激发量子阱层生长在阻挡层上。 非辐射阱层和阻挡层形成用于束激活量子阱层的超晶格。 束活化量子阱层的层厚度大于超晶格阱层的层厚度。 版权所有（C）2011，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：DE19955747A1
公开(公告)日：2001-05-23
申请号：DE19955747
申请日：1999-11-19
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HAHN BERTHOLD , LUGAUER HANS-JUERGEN , BADER STEFAN , BOLAY HELMUT , HAERLE VOLKER
Abstract: The device comprises alternate well layers (6a) and barrier layers (6b) made of different types of semiconductor layers. The well layers are formed from thin gallium indium nitride layers. The blocking layers are formed from thicker gallium nitride layers. An active quantum well made of gallium indium nitride (6c) adjoins the uppermost blocking layer. Super-lattices are formed by the well layers and the blocking layers. The well layers are thinner than 3 nm, and the blocking layers are 5 nm thick or thicker.
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公开(公告)号：DE10208766A1
公开(公告)日：2003-09-18
申请号：DE10208766
申请日：2002-02-28
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HAERLE VOLKER , BOLAY HELMUT
IPC: H01L21/205 , H01L33/00
Abstract: The buffer layer (2) is deposited onto the substrate (1) at a first temperature. A layer (3) forming part of the connecting semiconductor layer structure (4) is added in the direction of growth, onto the buffer layer. Layer (3) is grown at a lower temperature. An Independent claim is included for the corresponding light-emitting semiconductor chip.
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公开(公告)号：DE10208766B4
公开(公告)日：2007-06-21
申请号：DE10208766
申请日：2002-02-28
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HAERLE VOLKER , BOLAY HELMUT
IPC: H01L21/205 , H01L33/00
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公开(公告)号：CA2360502A1
公开(公告)日：2001-05-31
申请号：CA2360502
申请日：2000-11-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HAHN BERTHOLD , EISERT DOMINIK , BADER STEFAN , BOLAY HELMUT , ZEHNDER ULRICH , LELL ALFRED , STRAUSS UWE , LUGAUER HANS-JURGEN , WEIMAR ANDREAS , HARLE VOLKER , VOLKL JOHANNES
Abstract: The invention relates to an optical semiconductor device comprising a multip le quantum well structure, in which well layers and barrier layers consisting o f different types of semiconductor layers are stacked alternately on top of on e another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation t o the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together wit h the barrier layers (6b) form a superlattice for said active quantum well lay er.
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6.发明申请
公开(公告)号：WO0139282A3
公开(公告)日：2001-12-06
申请号：PCT/DE0004089
申请日：2000-11-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
Inventor： HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS-JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
CPC classification number: H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
Abstract: The invention relates to an optical semiconductor device comprising a multiple quantum well structure, in which well layers and barrier layers consisting of different types of semiconductor layers are stacked alternately on top of one another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation to the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together with the barrier layers (6b) form a superlattice for said active quantum well layer.
Abstract translation: 具有多量子阱结构的光学半导体器件堆叠在阱层和不同类型的半导体层的势垒层交替层叠，所述阱层（6A）的基础上，具有第一电子能量和势垒层的氮化物半导体材料的第一组合物（6b）中的一个 的氮化物半导体材料的第二组合物被提供相对于所述第一电子能量更高的电子能量，其中一个辐射量子阱有源层（图6c）的下游布置为在生长的方向，为此，上游基本上无辐射阱层（6a）和阻挡层（6b）的形成的超晶格看到 ，
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