公开(公告)号：AU3918201A

公开(公告)日：2001-08-27

申请号：AU3918201

申请日：2001-02-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： EISERT DOMINIK ,  HARLE VOLKER ,  KUHN FRANK ,  MUNDBROD MANFRED ,  STRAUSS UWE ,  ZEHNDER ULRICH ,  BAUR JOHANNES ,  JACOB ULRICH ,  NIRSCHL ERNST ,  LINDER NORBERT ,  SEDLMEIER REINHARD

IPC: H01L21/3213 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

公开(公告)号：AU2504501A

公开(公告)日：2001-08-27

申请号：AU2504501

申请日：2000-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： EISERT DOMINIK ,  HARLE VOLKER ,  KUHN FRANK ,  MUNDBROD MANFRED ,  STRAUSS UWE ,  ZEHNDER ULRICH

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40

Abstract: A radiation-emitting semiconductor component has a multiple layer structure (4) containing a radiation-emitting active layer (5), and a radiation-permeable window (1) having main surfaces (2, 3) and a recess (8) for forming radiation coupling surfaces running diagonally to the first main surface (2). At least one side surface of the window and/or recess limiting the second main surface (3) is provided with a first contact surface (11). An independent claim is also included for the production of a radiation-emitting semiconductor component comprising preparing a window layer with main surfaces; applying a semiconductor layer structure on the first main surface; structuring the window layer to form a recess in the second main surface; forming a contact surface on the side of the second main surface of the window layer; and finishing the semiconductor component. Preferred Features: The window is made from sapphire, quartz glass, diamond, ITO, tin oxide, zinc oxide, indium oxide, silicon carbide or gallium phosphide. The multiple layer structure is based on gallium nitrides.

公开(公告)号：CA2360502A1

公开(公告)日：2001-05-31

申请号：CA2360502

申请日：2000-11-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  EISERT DOMINIK ,  BADER STEFAN ,  BOLAY HELMUT ,  ZEHNDER ULRICH ,  LELL ALFRED ,  STRAUSS UWE ,  LUGAUER HANS-JURGEN ,  WEIMAR ANDREAS ,  HARLE VOLKER ,  VOLKL JOHANNES

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

Abstract: The invention relates to an optical semiconductor device comprising a multip le quantum well structure, in which well layers and barrier layers consisting o f different types of semiconductor layers are stacked alternately on top of on e another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation t o the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together wit h the barrier layers (6b) form a superlattice for said active quantum well lay er.