Abstract:
An electron beam type pattern transfer apparatus has a photoelectric mask and a sample in a vacuum container made of non-magnetic material. The photoelectric mask is adapted to receive an ultraviolet ray from a light source and emit photoelectrons corresponding to a predetermined transfer pattern and the sample is disposed in parallel with the photoelectric mask with a predetermined distance left therebetween and illuminated with the photoelectrons to form a resist image thereon which corresponds to the transfer pattern. A power source for applying a voltage for accelerating the photoelectrons emitted is connected between the photoelectric mask and the sample. A pair of focusing magnets are disposed around the axis of the vacuum container such that they are located one at one outer side and one in an opposite outer side of the vacuum container to permit a vertical magnetic field to be created between the photoelectric mask and the sample. The focusing magnets have superconductive coils and are driven in a persistent mode.
Abstract:
Sub-micron pattern delineation, importantly in the fabrication of large scale integrated devices, is based on a patterned photocathode (3,4,6,7). Functionally, the photocathode plays the role of the mask in competing systems, either in proximity printing or in projection. In operation, the photocathode is illuminated by ultraviolet radiation (5) to release electrons (9) which are brought to focus on a resist-coated wafer (12,13) with assistance of a uniform magnetic field (B) together with an accelerating applied voltage (E).
Abstract:
The present invention relates to an orbit correction method for a charged particle beam, and aims to solve problems inherent in conventional aberration correction systems and to provide a low-cost, high-precision, high-resolution optical converging system for a charged particle beam. To this end, employed is a configuration in which a beam orbit is limited in ring zone form to form a distribution of electromagnetic field converging toward the center of a beam orbit axis. Consequently, a nonlinear action outwardly augmented, typified by spherical aberration of an electron lens, can be cancelled out. Specifically, this effect can be achieved by an electron disposed on the axis and subjected to a voltage to facilitate the occurrence of electrostatic focusing. For a magnetic field, this effect can be achieved by forming a coil radially distributed-wound on a surface equiangularly divided in the direction of rotation to control convergence of a magnetic flux density.
Abstract:
An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and a third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.
Abstract:
Sub-micron pattern delineation, importantly in the fabrication of large scale integrated devices, is based on a patterned photocathode. Functionally, the photocathode plays the role of the mask in competing systems, either in proximity printing or in projection. In operation, the photocathode is illuminated by ultraviolet radiation to release electrons which are brought to focus on a resist-coated wafer with assistance of a uniform magnetic field together with an accelerating applied voltage.
Abstract:
An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.
Abstract:
Disclosed are lens apparatus in which a beam of charged particlesis brought to a focus by means of a magnetic field, the lens being situated behind the target position. In illustrative embodiments, a lens apparatus is employed in a scanning electron microscopeas the sole lens for high-resolution focusing of an electron beam, and in particular, an electron beam having an accelerating voltage of from about 10 to about 30,000 V. In one embodiment, the lens apparatus comprises an electrically-conducting coil arranged around the axis of the beam and a magnetic pole piece extending along the axis of the beam at least within the space surrounded by the coil. In other embodiments, the lens apparatus comprises a magnetic dipole or virtual magnetic monopole fabricated from a variety of materials, including permanent magnets, superconducting coils, and magnetizable spheres and needles contained within an energy-conducting coil. Multiple-array lens apparatus are also disclosed for simultaneous and/or consecutive imaging of multiple images on single or multiple specimens. The invention further provides apparatus, methods, and devices useful in focusing charged particle beams for lithographic processes.