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公开(公告)号：CN1825578B
公开(公告)日：2010-07-21
申请号：CN200510128990.8
申请日：2005-12-05
Applicant: 株式会社瑞萨科技
IPC: H01L23/488 , H01L21/60 , B23K35/24
CPC classification number: H05K3/3463 , B23K35/0238 , B23K35/262 , B23K35/264 , B23K2101/40 , H01L23/3128 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/32507 , H01L2224/371 , H01L2224/3754 , H01L2224/40225 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/73265 , H01L2224/83101 , H01L2224/83194 , H01L2224/83801 , H01L2224/8381 , H01L2224/8382 , H01L2224/83825 , H01L2224/84801 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01087 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/15311 , H01L2924/15747 , H01L2924/15787 , H01L2924/16152 , H01L2924/181 , H01L2924/19105 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2924/01049 , H01L2924/3512 , H01L2224/85399 , H01L2224/05599
Abstract: 本发明提供一种半导体组件及其制造方法，在将半导体元件(3)和无源元件(4)与印制基板(6a)连接的半导体组件中，半导体元件(3)和无源元件(4)与印制基板(6a)之间的连接部(17)，由具有260℃以上的熔点的金属和具有260℃以上的熔点的金属间化合物构成。具体地，通过利用具有熔点为260℃以下的无铅焊锡来连接，可以将便宜、轻量且可降低部件高度的印制基板(6a)应用于组件基板中。
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公开(公告)号：CN101295687A
公开(公告)日：2008-10-29
申请号：CN200810093595.4
申请日：2008-04-25
Applicant: 株式会社瑞萨科技
IPC: H01L23/48 , H01L23/485 , H01L23/495 , H01L23/31
Abstract: 本发明公开了一种半导体器件。本发明的目的是实现其中密封功率MOSFET的小表面安装封装的导通电阻的减小。硅芯片安装在与构成漏极引线的引线集成的芯片焊盘部上。硅芯片的主表面上具有源极焊盘和栅极焊盘。硅芯片的背面构成功率MOSFET的漏极，并经由Ag浆料键合至芯片焊盘部的顶表面。构成源极引线的引线经由Al带电耦合至源极焊盘，而构成栅极引线的引线经由Au线电耦合至栅极焊盘。
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公开(公告)号：CN1825578A
公开(公告)日：2006-08-30
申请号：CN200510128990.8
申请日：2005-12-05
Applicant: 株式会社瑞萨科技
IPC: H01L23/488 , H01L21/60 , B23K35/24
CPC classification number: H05K3/3463 , B23K35/0238 , B23K35/262 , B23K35/264 , B23K2101/40 , H01L23/3128 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/32507 , H01L2224/371 , H01L2224/3754 , H01L2224/40225 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/73265 , H01L2224/83101 , H01L2224/83194 , H01L2224/83801 , H01L2224/8381 , H01L2224/8382 , H01L2224/83825 , H01L2224/84801 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01087 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/15311 , H01L2924/15747 , H01L2924/15787 , H01L2924/16152 , H01L2924/181 , H01L2924/19105 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2924/01049 , H01L2924/3512 , H01L2224/85399 , H01L2224/05599
Abstract: 本发明提供一种半导体组件及其制造方法，在将半导体元件(3)和无源元件(4)与印制基板(6a)连接的半导体组件中，半导体元件(3)和无源元件(4)与印制基板(6a)之间的连接部(17)，由具有260℃以上的熔点的金属和具有260℃以上的熔点的金属间化合物构成。具体地，通过利用具有熔点为260℃以下的无铅焊锡来连接，可以将便宜、轻量且可降低部件高度的印制基板(6a)应用于组件基板中。
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