公开(公告)号：US20230080970A1

公开(公告)日：2023-03-16

申请号：US17942277

申请日：2022-09-12

Applicant: ASM IP Holding B.V.

Inventor： YongJin Jeong ,  Juill Lee ,  DaeYoun Kim ,  HeeBum Chae

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing apparatus capable of solving a misalignment problem of chamber portions due to thermal deformation or a vacuum force during high-temperature processing includes a first plate; a second plate on the first plate; a position control unit configured to change a relative position of the second plate with respect to the first plate; and a support unit configured to permit movement of the second plate while supporting the second plate.

公开(公告)号：US11251068B2

公开(公告)日：2022-02-15

申请号：US16601593

申请日：2019-10-15

Applicant: ASM IP Holding B.V.

Inventor： JaeMin Roh ,  DaeYoun Kim ,  Julll Lee ,  ChangMin Lee

IPC: H01L21/687 ,  H01L21/68 ,  H01J37/32

Abstract: A substrate processing apparatus capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes a plurality of reactors, wherein each of the reactors includes a substrate supporting apparatus; a ring surrounding the substrate supporting apparatus; and an alignment device for moving the substrate supporting apparatus, wherein the ring is installed such that one surface of the ring comes in contact with the substrate supporting apparatus as the substrate supporting apparatus moves and the ring is movable by a pushing force of the substrate supporting apparatus.

公开(公告)号：US20210319982A1

公开(公告)日：2021-10-14

申请号：US17224779

申请日：2021-04-07

Applicant: ASM IP Holding B.V.

Inventor： JaeHyun Kim ,  DaeYoun Kim ,  JeongHo Lee ,  HyunSoo Jang ,  YonJong Jeon

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

Abstract: A substrate processing apparatus capable of preventing power dissipation and achieving high process reproducibility includes a partition and a processing unit below the partition, wherein the processing unit includes a conductive body and at least one conductive protrusion integrally formed with the conductive body.

公开(公告)号：US20240404790A1

公开(公告)日：2024-12-05

申请号：US18674057

申请日：2024-05-24

Applicant: ASM IP Holding B.V.

Inventor： Jeongsu Lee ,  Dongok Shin ,  Songwhe Herr ,  DaeYoun Kim

IPC: H01J37/32

Abstract: A wafer processing system using plasma would be presented. The system may comprise a plurality of reaction chambers disposed on a platform, each of them being configured to process wafers; a plasma generator coupled to the plurality of reaction chambers individually and configured to generate plasma with a certain frequency and a certain phase, and further configured to provide the generated plasma to the plurality of reaction chambers; and a control circuit connected to the plasma generator and configured to adjust the phase of the plasma generated by the plasma generator; wherein, the control circuit is further configured to shift the phase of the generated plasma provided to the plurality of reaction chambers independently.

公开(公告)号：US20240363331A1

公开(公告)日：2024-10-31

申请号：US18664118

申请日：2024-05-14

Applicant: ASM IP Holding B.V.

Inventor： DaeYoun Kim ,  JaeHyun Kim ,  SeungHwan Lee

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  H01J37/20 ,  H01J37/32

CPC classification number: H01L21/02087 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4586 ,  H01J37/20 ,  H01J37/3244 ,  H01J37/32715

Abstract: A substrate processing apparatus capable of selective processing a thin film in a bevel edge includes: a substrate support plate including a recess and at least one path formed in the recess; and a gas supply unit on the substrate support plate, wherein a first distance between a portion of the substrate support plate inside the recess and the gas supply unit is less than a second distance between the gas supply unit and the other portion of the substrate support plate outside the recess.

公开(公告)号：US20240105479A1

公开(公告)日：2024-03-28

申请号：US18371227

申请日：2023-09-21

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  DaeYoun Kim

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32862 ,  H01L21/67017 ,  H01J2237/002

Abstract: A substrate processing apparatus may be presented. The apparatus comprising a substrate reaction chamber configured to hold and process a substrate, a remote plasma unit for generating a radical gas to clean the substrate reaction chamber, a cooling unit, the cooling unit comprising: a tank configured to store water for cooling, a fan configured to generate an air flow, a plurality of fins placed in front of the fan, a plurality of cooling pipes configured to circulate the water from the tank and positioned to pass through in front of the fan, wherein the water passing through the cooling pipes cools down the air flow generated by the fan.

公开(公告)号：US20230187260A1

公开(公告)日：2023-06-15

申请号：US18078229

申请日：2022-12-09

Applicant: ASM IP Holding B.V.

Inventor： Wonki Jeong ,  DaeYoun Kim ,  DongJun Park

IPC: H01L21/687

CPC classification number: H01L21/68742 ,  H01L21/68785 ,  H01L21/68757

Abstract: In one embodiment according to the disclosure, an apparatus for manipulating substrates in semiconductor processing comprising a plurality of lift pins, comprising a top end and a down end, and configured for the top end can move upward to an UP position and move downward to a DOWN position, wherein the top end supports a wafer, a weight comprising a plurality of lift pin holes and is configured to connect the plurality of lift pins and a plurality of weight supports, each of them are configured to attach to the plurality of lift pins respectively and each of them are to be placed in the plurality of lift pin holes respectively is presented. The embodiment can improve the semiconductor processing efficiency by preventing the lift pins from getting stuck.

公开(公告)号：US20250132131A1

公开(公告)日：2025-04-24

申请号：US18919874

申请日：2024-10-18

Applicant: ASM IP Holding B.V.

Inventor： Akshay Gunaji ,  Sergei Golovkov ,  ByungWook Son ,  Gopu Krishna ,  DaeYoun Kim

IPC: H01J37/32

Abstract: A plasma modulation apparatus for use in a substrate processing system is disclosed. The apparatus comprising: a plurality of radio frequency (RF) paths connected to N different meshes, wherein a susceptor of the substrate processing system is divided into the N different meshes and N is an integer equal to or greater than 2, wherein each of the RF paths comprises: an RF rod connected to a mesh and configured to transmit RF signal from the meshes; a Voltage-Current (VI) sensor connected to the RF rod and configured to measure a current from the RF rod; and a variable impedance circuit connected to the VI sensor and configured to change an impedance of the RF path and further configured to be grounded, wherein each of the RF paths are grounded separately and each of the RF paths corresponds to a different mesh, respectively.

公开(公告)号：US20250019828A1

公开(公告)日：2025-01-16

申请号：US18764500

申请日：2024-07-05

Applicant: ASM IP Holding B.V.

Inventor： Vivek Upadhaya ,  Yonjong Jeon ,  SungHoon Jun ,  DaeYoun Kim

IPC: C23C16/455 ,  H01L21/67

Abstract: A gas input structure for providing gas used in a wafer processing chamber is presented. The structure comprising a flow control ring having a sealing part and a retaining ring; and an outer body configured to encircle the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel comprising a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing a gas from the at least one gas tunnel to be injected through the plurality of holes into a gas channel, wherein the gas channel is connected to a wafer processing chamber.

公开(公告)号：US20230260754A1

公开(公告)日：2023-08-17

申请号：US18107588

申请日：2023-02-09

Applicant: ASM IP Holding B.V.

Inventor： Doohan Kim ,  YongGyu Han ,  KiChul Um ,  DaeYoun Kim

IPC: H01J37/32 ,  H01G5/16

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01G5/16 ,  H01J2237/024 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/332

Abstract: A substrate processing method capable of performing a stable plasma process includes: supplying a source gas under a first plasma atmosphere using a substrate processing apparatus including a power generation unit, a first reactor, and a matching network between the power generation unit and the first reactor; purging the source gas; supplying a reaction gas under a second plasma atmosphere; and purging the reaction gas, wherein setting a variable capacitor included in the matching network to a first value is performed during the purging of the source gas, and setting the variable capacitor to a second value is performed during the purging of the reaction gas.