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    Structure and method for integrated microphone
    5.
    发明授权
    Structure and method for integrated microphone 有权
    集成麦克风的结构和方法

    公开(公告)号：US09264833B2

    公开(公告)日：2016-02-16

    申请号：US13973812

    申请日：2013-08-22

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Jung-Huei Peng ,  Chia-Hua Chu ,  Yao-Te Huang ,  Chin-Yi Cho ,  Li-Min Hung ,  Chun-Wen Cheng

    IPC: H04R19/04 ,  H04R31/00 ,  H04R19/00

    CPC classification number: H04R31/003 ,  B81C1/00158 ,  B81C2201/0125 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/036 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003 ,  H04R2307/027

    Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate; a silicon oxide layer formed on one side of the first silicon substrate; a second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates; and a diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates, wherein the first plate and the diaphragm are configured to form a capacitive microphone.

    Abstract translation: 本公开提供了集成麦克风结构的一个实施例。 集成麦克风结构包括图案化为第一板的第一硅衬底; 形成在所述第一硅衬底的一侧上的氧化硅层; 第二硅衬底，通过所述氧化硅层与所述第一衬底接合，使得所述氧化硅层夹在所述第一和第二硅衬底之间; 以及隔膜，其固定在所述氧化硅层上并且设置在所述第一和第二硅衬底之间，其中所述第一板和所述隔膜被构造成形成电容式麦克风。

    Structure and Method for Integrated Microphone
    6.
    发明申请
    Structure and Method for Integrated Microphone 有权
    集成麦克风的结构和方法

    公开(公告)号：US20140270272A1

    公开(公告)日：2014-09-18

    申请号：US13973812

    申请日：2013-08-22

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Jung-Huei Peng ,  Chia-Hua Chu ,  Yao-Te Huang ,  Chin-Yi Cho ,  Li-Min Hung ,  Chun-Wen Cheng

    IPC: H04R1/08

    CPC classification number: H04R31/003 ,  B81C1/00158 ,  B81C2201/0125 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/036 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003 ,  H04R2307/027

    Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate; a silicon oxide layer formed on one side of the first silicon substrate; a second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates; and a diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates, wherein the first plate and the diaphragm are configured to form a capacitive microphone.

    Abstract translation: 本公开提供了集成麦克风结构的一个实施例。 集成麦克风结构包括图案化为第一板的第一硅衬底; 形成在所述第一硅衬底的一侧上的氧化硅层; 第二硅衬底，通过所述氧化硅层与所述第一衬底接合，使得所述氧化硅层夹在所述第一和第二硅衬底之间; 以及隔膜，其固定在所述氧化硅层上并且设置在所述第一和第二硅衬底之间，其中所述第一板和所述隔膜被构造成形成电容式麦克风。

    METHOD FOR MANUFACTURING MEMS DEVICE
    7.
    发明申请
    METHOD FOR MANUFACTURING MEMS DEVICE 有权
    制造MEMS器件的方法

    公开(公告)号：US20130309797A1

    公开(公告)日：2013-11-21

    申请号：US13882337

    申请日：2011-05-19

    Applicant: Jianhong Mao ,  Deming Tang

    Inventor： Jianhong Mao ,  Deming Tang

    IPC: B81C1/00

    CPC classification number: B81C1/0015 ,  B81B2203/0118 ,  B81B2207/07 ,  B81C1/00293 ,  B81C2201/0109 ,  B81C2201/0125 ,  B81C2203/0145 ,  G01P15/0802 ,  G01P2015/0828 ,  H03H3/0072

    Abstract: A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure (100) formed therein; forming a first sacrificial layer (201) on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon; etching the first sacrificial layer to form a first recess (301); covering and forming a first dielectric layer (401) on the surface of the first sacrificial layer; thinning the first dielectric layer by a chemical mechanical polishing (CMP) process, until exposing the first sacrificial layer; forming a micromechanical structure layer (500) on the surface of the first sacrificial layer and exposing the first sacrificial layer, wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency

    Abstract translation: 提供了一种用于制造微机电系统（MEMS）装置的方法。 该方法包括：提供半导体衬底，其中形成有金属互连结构（100）的半导体衬底; 在所述半导体衬底的表面上形成第一牺牲层（201），所述第一牺牲层的材料是无定形碳; 蚀刻第一牺牲层以形成第一凹部（301）; 在第一牺牲层的表面上覆盖并形成第一介电层（401）; 通过化学机械抛光（CMP）工艺使第一介电层变薄，直到暴露出第一牺牲层; 在所述第一牺牲层的表面上形成微机械结构层（500）并暴露所述第一牺牲层，其中所述微机械结构层的一部分连接到所述第一介电层。 该方法避免抛光无定形碳，缩短生产周期，提高生产效率

    METHOD FOR MANUFACTURING MICROMECHANICAL COMPONENTS
    8.
    发明申请
    METHOD FOR MANUFACTURING MICROMECHANICAL COMPONENTS 有权
    制备微生物组分的方法

    公开(公告)号：US20110070675A1

    公开(公告)日：2011-03-24

    申请号：US12884823

    申请日：2010-09-17

    Applicant: Jyrki KIIHAMAKI ,  Hannu KATTELUS

    Inventor： Jyrki KIIHAMAKI ,  Hannu KATTELUS

    IPC: H01L21/02

    CPC classification number: B81C1/00611 ,  B81C2201/0125

    Abstract: The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.

    Abstract translation: 本发明涉及加速度传感器的制造方法。 在该方法中，使用薄SOI晶片结构，其中蚀刻凹槽，其壁被氧化。 覆盖所有其他材料的厚电极材料层生长在结构的顶部，然后将表面研磨并化学机械地抛光，在结构中蚀刻薄的释放孔，形成结构图案，最后使用 执行氢氟酸溶液以释放旨在移动并打开电容间隙的结构。

    Use of chemical mechanical polishing in micromachining
    10.
    发明授权
    Use of chemical mechanical polishing in micromachining 失效
    在微加工中使用化学机械抛光

    公开(公告)号：US5804084A

    公开(公告)日：1998-09-08

    申请号：US729122

    申请日：1996-10-11

    Applicant: Robert D. Nasby ,  Dale L. Hetherington ,  Jeffry J. Sniegowski ,  Paul J. McWhorter ,  Christopher A. Apblett

    Inventor： Robert D. Nasby ,  Dale L. Hetherington ,  Jeffry J. Sniegowski ,  Paul J. McWhorter ,  Christopher A. Apblett

    IPC: B32B3/04 ,  H01L21/00

    CPC classification number: B81C1/00611 ,  B81C2201/0125

    Abstract: A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface.

    Abstract translation: 一种在微机械制造过程中消除地形影响的过程。 牺牲氧化物层沉积在含有在元件之间具有蚀刻谷的功能元件的层上，使得牺牲层具有足够的厚度以填充谷并且向上延伸到氧化物层的上表面上的最低点 至少与被覆盖层中的功能元件的顶表面一样高。 然后将牺牲氧化物层抛光并通过化学机械抛光进行平面化。 然后在这个新的平坦化表面上形成另一层功能元件。

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