公开(公告)号：US09493343B2

公开(公告)日：2016-11-15

申请号：US14840453

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. Herrin ,  Jeffrey C. Maling ,  Anthony K. Stamper

IPC: H05K3/00 ,  B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

Abstract translation: 形成至少一个微电子机械系统（MEMS）的方法包括在远离梁结构的绝缘体层上形成梁结构和电极。 该方法还包括在光束结构上方并且远离电极形成至少一个牺牲层。 该方法还包括在至少一个牺牲层和电极上形成盖结构。 该方法还包括同时提供穿过盖结构的通气孔以暴露牺牲层并在电极上形成部分通孔。 该方法还包括排出牺牲层以形成空腔。 该方法还包括用材料密封通气孔。 该方法还包括通过部分通孔在盖结构中形成最终通孔至电极。

公开(公告)号：US09470710B2

公开(公告)日：2016-10-18

申请号：US13779160

申请日：2013-02-27

Applicant: Texas Instruments Incorporated

Inventor： Ira Oaktree Wygant ,  Peter B. Johnson

IPC: G01P15/125 ,  H02N1/00 ,  H04R19/00 ,  B81B7/00 ,  H03H3/007 ,  H03H9/24 ,  H03H9/10

CPC classification number: G01P15/125 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/036 ,  H02N1/006 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2468 ,  H03H9/2489 ,  H04R19/005 ,  Y10T29/49165

Abstract: A packaged capacitive MEMS sensor device includes at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell including a first substrate having a thick and a thin dielectric region. A second substrate with a membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a MEMS cavity. The membrane layer provides a fixed electrode and a released MEMS electrode over the MEMS cavity. A first through-substrate via (TSV) extends through a top side of the MEMS electrode and a second TSV through a top side of the fixed electrode. A metal cap is on top of the first TSV and second TSV. A third substrate including an inner cavity and outer protruding portions framing the inner cavity is bonded to the thick dielectric regions. The third substrate together with the first substrate seals the MEMS electrode.

Abstract translation: 封装的电容MEMS传感器装置包括至少一个电容式MEMS传感器元件，其具有至少一个电容式MEMS传感器单元，该电容式MEMS传感器单元包括具有厚和薄电介质区域的第一基板 具有膜层的第二衬底被结合到厚电介质区域和薄介电区域上以提供MEMS空腔。 膜层在MEMS腔体上提供固定电极和释放的MEMS电极。 第一穿通基板通孔（TSV）延伸穿过MEMS电极的顶侧，通过固定电极的顶侧延伸穿过第二TSV。 金属帽位于第一TSV和第二TSV的顶部。 包括内腔和构成内腔的外突出部分的第三基板被接合到厚电介质区域。 第三衬底与第一衬底一起密封MEMS电极。

公开(公告)号：US09423605B2

公开(公告)日：2016-08-23

申请号：US13202528

申请日：2010-02-19

Applicant: Sasikanth Manipatruni ,  Michal Lipson ,  Jacob T. Robinson

Inventor： Sasikanth Manipatruni ,  Michal Lipson ,  Jacob T. Robinson

IPC: G02B26/00 ,  G02B6/42 ,  A61F9/02 ,  G02B1/00 ,  H01S3/00

CPC classification number: G02B26/001 ,  A61F9/022 ,  A61F9/023 ,  B81B3/0083 ,  B81B2201/04 ,  B81B2201/047 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/0015 ,  B81C2201/013 ,  G02B1/005 ,  G02B6/4209 ,  G02C7/104 ,  G02C7/107 ,  H01S3/005 ,  H01S3/0064

Abstract: There is set forth herein an optomechanical device which can comprise a first mirror and a second mirror forming with the first mirror a cavity. In one aspect the first mirror can be a movable mirror. The optomechanical device can be adapted so that the first mirror is moveable responsively to radiation force.

Abstract translation: 这里提出了一种光学机械装置，其可以包括第一反射镜和形成有第一反射镜的第二反射镜的腔。 在一个方面，第一镜可以是可移动镜。 光学机械装置可以适于使得第一反射镜能够响应于辐射力而移动。

公开(公告)号：US20160240882A1

公开(公告)日：2016-08-18

申请号：US15027065

申请日：2014-10-02

Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE DE NANTES

Inventor： Christophe Lethien ,  Pascal Tilmant ,  Etienne Eustache ,  Nathalie Rolland ,  Thierry Brousse

IPC: H01M10/02 ,  B81B1/00 ,  H01M10/0585 ,  B81C1/00

CPC classification number: H01M10/02 ,  B81B1/002 ,  B81B2203/0315 ,  B81B2203/0361 ,  B81C1/00047 ,  B81C1/00111 ,  B81C2201/0112 ,  B81C2201/013 ,  B81C2201/0159 ,  H01G11/70 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0585 ,  H01M2220/30 ,  Y02E60/13

Abstract: A microstructured substrate includes a plurality of at least one elementary microstructure. An electrical storage device, and more particularly an all-solid-state battery, can include the microstructured substrate.

Abstract translation: 微结构化衬底包括多个至少一个基本微结构。 电存储装置，特别是全固态电池，可以包括微结构化基片。

公开(公告)号：US20160228915A1

公开(公告)日：2016-08-11

申请号：US15021962

申请日：2014-09-15

Applicant: KONINKLIJKE PHILPS N.V.

Inventor： PETER DIRKSEN ,  MARCEL MULDER ,  ADRIAAN LEEUWESTEIN

IPC: B06B1/02 ,  B81C1/00 ,  B81B3/00 ,  H02N1/00

CPC classification number: B06B1/0292 ,  B81B3/0021 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/0109 ,  B81C2201/013 ,  H02N1/006

Abstract: Disclosed is a method of manufacturing a capacitive micro-machined ultrasonic transducer (CMUT) device comprising a first electrode (112) on a substrate (110) and a second electrode (122) embedded in an electrically insulating membrane, the first electrode and the membrane being separated by a cavity (130) formed by the removal of a sacrificial material (116) in between the first electrode and the membrane, the method comprising forming a membrane portion (22) on the second electrode and a further membrane portion (24) extending from the membrane portion towards the substrate alongside the sacrificial material, wherein the respective thicknesses the membrane portion and the further membrane portion exceed the thickness of the sacrificial material prior to forming said cavity. A CMUT device manufactured in accordance with this method and an apparatus comprising such a CMUT device are also disclosed.

Abstract translation: 公开了一种制造电容微加工超声波换能器（CMUT）装置的方法，该装置包括在基板上的第一电极和埋在电绝缘膜中的第二电极，第一电极和膜 由通过在第一电极和膜之间移除牺牲材料（116）而形成的空腔（130）隔开，所述方法包括在所述第二电极上形成膜部分（22）和另外的膜部分（24） 在牺牲材料旁边从膜部分朝向衬底延伸，其中在形成所述腔体之前，膜部分和另外的膜部分超过牺牲材料的厚度的相应厚度。 还公开了根据该方法制造的CMUT装置和包括这种CMUT装置的装置。

公开(公告)号：US20160221038A1

公开(公告)日：2016-08-04

申请号：US15095264

申请日：2016-04-11

Applicant: Texas Instruments Incorporated

Inventor： PETER B. JOHNSON ,  IRA OAKTREE WYGANT

IPC: B06B1/02 ,  B81C1/00

CPC classification number: B06B1/0292 ,  B06B2201/76 ,  B81B7/007 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/036 ,  H02N1/006 ,  H04R19/005 ,  H05K2201/09845 ,  H05K2201/09863

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device including at least one CMUT element with at least one CMUT cell is formed. A patterned dielectric layer thereon including a thick and a thin dielectric region is formed on a top side of a single crystal material substrate. A second substrate is bonded to the thick dielectric region to provide at least one sealed micro-electro-mechanical system (MEMS) cavity. The second substrate is thinned to reduce a thickness of said second substrate to provide a membrane layer. The membrane layer is etched to form a movable membrane over said MEMS cavity and to remove said membrane layer over said top side substrate contact area. The thin dielectric region is removed from over said top side substrate contact area. A top side metal layer is formed including a trace portion coupling said top side substrate contact area to said movable membrane. From a bottom side surface of said first substrate, etching is performed to open an isolation trench around said single crystal material to form a through-substrate via (TSV) plug of said single crystal material at least under said top side substrate contact area which is electrically isolated from surrounding regions of said single crystal material.

Abstract translation: 形成包括至少一个具有至少一个CMUT单元的CMUT元件的电容式微加工超声波传感器（CMUT）装置。 在单晶材料基板的上侧形成有包含厚而薄的电介质区域的图案化电介质层。 第二衬底被结合到厚电介质区域以提供至少一个密封的微机电系统（MEMS）空腔。 第二衬底被薄化以减小所述第二衬底的厚度以提供膜层。 蚀刻膜层以在所述MEMS空腔上形成可移动膜，并且在所述顶侧基板接触区域上去除所述膜层。 从所述顶侧基板接触区域的上方去除薄介电区域。 形成顶侧金属层，其包括将所述顶侧基板接触区域连接到所述可动膜的迹线部分。 从所述第一衬底的底侧表面进行蚀刻以打开围绕所述单晶材料的隔离沟槽，以至少在所述顶侧衬底接触区域的下方形成所述单晶材料的贯穿衬底通孔（TSV）插头 与所述单晶材料的周围区域电隔离。

公开(公告)号：US20160181041A1

公开(公告)日：2016-06-23

申请号：US14977488

申请日：2015-12-21

Applicant: DELFMEMS SAS

Inventor： Anne-Sophie Rollier ,  Antoine Bonnabel ,  Karim Segueni

IPC: H01H59/00 ,  B81B3/00 ,  H01H49/00 ,  B81C1/00

CPC classification number: H01H59/0009 ,  B81B3/0051 ,  B81B2201/018 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/013 ,  H01H49/00 ,  H01H2059/0027 ,  H01H2059/0036 ,  H01H2227/004

Abstract: The present invention relates to a method of manufacturing an MEMS device that comprises the steps of forming a first membrane layer over a sacrificial base layer, forming a second membrane layer over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer and forming stoppers to restrict movement of the first membrane layer. Moreover, it is provided MEMS device comprising a movable membrane comprising a first membrane layer and a second membrane layer formed over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer.

Abstract translation: 本发明涉及一种制造MEMS器件的方法，该方法包括以下步骤：在牺牲基底层上形成第一膜层，在第一膜层上形成第二膜层，其中第二膜层包括暴露侧向部分 的第一膜层并形成止挡件以限制第一膜层的运动。 此外，提供了包括可移动膜的MEMS装置，其包括形成在第一膜层上的第一膜层和第二膜层，其中第二膜层包括暴露第一膜层侧向部分的侧向凹部。

公开(公告)号：US20160055282A1

公开(公告)日：2016-02-25

申请号：US14840422

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. HERRIN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

IPC: G06F17/50

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US09260295B2

公开(公告)日：2016-02-16

申请号：US14331495

申请日：2014-07-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81B7/00 ,  B81C1/00 ,  B81B7/02 ,  H01L23/00 ,  H01L23/10 ,  H01L25/00

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C1/00238 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/0792 ,  H01L23/10 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/291 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/32145 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2224/3012 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/00

Abstract: A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure.

Abstract translation: 方法实施例包括提供包括氧化物层，MEMS衬底，多晶硅层的MEMS晶片。 包括使用各向同性蚀刻形成的第一空腔的载体晶片被结合到MEMS，其中第一空腔与多晶硅层的暴露的第一部分对准。 图案化MEMS衬底，并且去除牺牲氧化物层的部分以形成第一和第二MEMS结构。 包括第二腔的盖晶片被结合到MEMS晶片，其中所述接合产生包括与所述第一MEMS结构对准的所述第二腔的第一密封腔，并且其中所述第二MEMS结构设置在所述多晶硅层的第二部分和 盖晶圆。 去除载体晶片的部分，使得第一腔作为第一MEMS结构的环境压力的通道。

公开(公告)号：US20150345196A1

公开(公告)日：2015-12-03

申请号：US14825213

申请日：2015-08-13

Applicant: Raviv Erlich ,  Yuval Gerson

Inventor： Raviv Erlich ,  Yuval Gerson

IPC: E05D7/00 ,  B81C1/00 ,  B81B3/00 ,  E05D11/00 ,  E05D1/02

CPC classification number: F16C11/12 ,  B81B3/0043 ,  B81B2201/0235 ,  B81B2201/034 ,  B81B2201/042 ,  B81B2203/0118 ,  B81B2203/0163 ,  B81C1/0015 ,  B81C1/00198 ,  B81C1/00523 ,  B81C2201/013 ,  E05D1/02 ,  E05D7/00 ,  E05D11/0081 ,  F16F1/48 ,  F16F2224/025 ,  F16F2226/00 ,  F16F2226/042 ,  G01C19/02 ,  G01P15/09 ,  G01P15/093 ,  G01P15/125 ,  G02B26/0833 ,  G02B26/105 ,  Y10T16/522 ,  Y10T16/525 ,  Y10T29/24 ,  Y10T29/25

Abstract: A mechanical device includes a long, narrow element made of a rigid, elastic material. A rigid frame is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material, different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.

Abstract translation: 机械装置包括由刚性弹性材料制成的长而窄的元件。 刚性框架构造成锚固附接到框架的元件的至少一个端部并且限定沿着梁和框架之间的元件纵向延伸的间隙，使得元件在间隙内自由移动 。 与刚性的弹性材料不同的固体填充材料填充元件和框架之间的间隙的至少一部分，以便允许元件在间隙内的第一移动模式，同时抑制不同的第二模式 运动。