公开(公告)号：US20190115186A1

公开(公告)日：2019-04-18

申请号：US16082745

申请日：2017-02-03

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoshifumi SEKIGUCHI ,  Shin IMAMURA ,  Hajime KAWANO ,  Shahedul HOQUE

IPC: H01J37/244 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/2443 ,  H01J2237/2445

Abstract: The present invention provides a light guide capable of guiding light generated by a scintillator at high efficiency to a photoreceiving element, a detector, and a charged particle beam device. For attaining the purpose, the present invention proposes a light guide that guides light generated by a scintillator to a photoreceiving element, provided with a scintillator containment portion formed of a first surface facing a surface opposite to a charged particle incident surface of the scintillator and a second surface facing a surface different from the surface opposite to the charged particle incident surface of the scintillator, and a tilted surface reflecting light incident from the second surface to the inside of the light guide.

公开(公告)号：US20190013179A1

公开(公告)日：2019-01-10

申请号：US16069796

申请日：2016-03-18

Applicant: HITACHI, LTD.

Inventor： Tetsufumi KAWAMURA ,  Misuzu SAGAWA ,  Kazuki WATANABE ,  Keiji WATANABE ,  Shuntaro MACHIDA ,  Nobuyuki SUGII ,  Daisuke RYUZAKI

IPC: H01J37/28 ,  H01L21/3065 ,  B81C1/00 ,  H01L21/66 ,  H01J37/305 ,  H01J37/302

CPC classification number: H01J37/28 ,  B81C1/00 ,  B81C2201/0132 ,  H01J37/3023 ,  H01J37/3056 ,  H01J2237/30411 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/3065 ,  H01L22/26

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

公开(公告)号：US20190006145A1

公开(公告)日：2019-01-03

申请号：US16021017

申请日：2018-06-28

Applicant: NGR Inc.

Inventor： Koji KANEKO

IPC: H01J37/22 ,  G06T7/60 ,  G06T7/13 ,  H01J37/28

CPC classification number: H01J37/222 ,  G06T7/13 ,  G06T7/60 ,  G06T2207/10061 ,  G06T2207/30168 ,  H01J37/20 ,  H01J37/21 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/1532 ,  H01J2237/216 ,  H01J2237/221

Abstract: A method capable of verifying whether operation parameters, such as a focus parameter and an astigmatism correction parameter, of a scanning electron microscope are correctly adjusted. This method includes: determining a ratio of a length of an edge in a first direction to a length of the edge in a second direction perpendicular to the first direction, the edge being an edge of a pattern selected from design data; generating images of the pattern while changing an operation parameter of a scanning electron microscope; calculating an edge sharpness in the first direction of each of the images and calculating an edge sharpness in the second direction of each of the images; determining a ratio of a peak value of the edge sharpness in the first direction to a peak value of the edge sharpness in the second direction; and emitting an alarm if the ratio of the peak values does not coincide with the ratio of the lengths of the edge.

公开(公告)号：US20180330494A1

公开(公告)日：2018-11-15

申请号：US15971685

申请日：2018-05-04

Applicant: NGR Inc.

Inventor： Kazuto TANAKA ,  Sumio SASAKI ,  Yoshishige SATO

IPC: G06T7/00 ,  H01L21/66 ,  H01J37/22

CPC classification number: G06T7/0006 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/2806 ,  H01J2237/2813 ,  H01L22/12

Abstract: A method capable of accurately detecting a defect of a contact hole by using voltage contrast images is disclosed. This method includes: obtaining a plurality of voltage contrast images generated at different points in time; calculating average brightness levels of respective contact holes on each of the plurality of voltage contrast images; calculating a brightness index value which is an average of the average brightness levels of respective contact holes on each of the plurality of voltage contrast images; calculating a difference between an average brightness level of each contact hole on each voltage contrast image and the brightness index value that has been calculated for that voltage contrast image; calculating a sum of the differences that have been calculated for contact holes located at the same position in the plurality of voltage contrast images; comparing the sum of the differences with a defect threshold value; and detecting a defect of a contact hole with which the sum of the differences is larger than the defect threshold value.

公开(公告)号：US20180328960A1

公开(公告)日：2018-11-15

申请号：US16041731

申请日：2018-07-20

Applicant: Tiptek, LLC

Inventor： Joseph W. Lyding ,  Gregory S. Girolami ,  Scott P. Lockledge ,  Jinju Lee

IPC: G01Q70/10 ,  H01J37/28 ,  G01Q70/16 ,  G01Q60/00 ,  G01Q60/16

CPC classification number: G01Q70/10 ,  G01Q60/00 ,  G01Q60/16 ,  G01Q70/16 ,  H01J37/28

Abstract: Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

公开(公告)号：US20180286633A1

公开(公告)日：2018-10-04

申请号：US15760994

申请日：2015-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kengo ASAI ,  Toru IWAYA ,  Hisayuki TAKASU ,  Hiroyasu SHICHI

IPC: H01J37/31 ,  H01J37/28 ,  H01J37/20 ,  H01J37/09 ,  H01J37/08

CPC classification number: H01J37/31 ,  H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/0262 ,  H01J2237/0264 ,  H01J2237/04732 ,  H01J2237/082 ,  H01J2237/31745

Abstract: To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

公开(公告)号：US10074513B2

公开(公告)日：2018-09-11

申请号：US15414517

申请日：2017-01-24

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Alon Litman ,  Efim Vinnitsky ,  Ofir Arzouan ,  Igor Petrov

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/20

CPC classification number: H01J37/244 ,  H01J37/145 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/047 ,  H01J2237/2445 ,  H01J2237/24475 ,  H01J2237/2448

Abstract: A method for evaluating a specimen includes positioning a detector in an inserted position in which a first distance between a tip of the detector and a plane extending along a surface of the specimen is less than a distance between the plane and a tip of charged particle beam optics. While maintaining the detector at the inserted position, the surface of the specimen is scanned by a primary beam that exits from the tip of the charged particle beam optics. The detector detects x-ray photons and/or charged particles emitted or reflected from the specimen as a result of scanning the specimen with the primary beam. After completion of the scanning, the detector is positioned at a retracted position in which a second distance between the tip of the detector and the plane exceeds a distance between the tip of the charged particle beam optics and the plane.

公开(公告)号：US20180247400A1

公开(公告)日：2018-08-30

申请号：US15964559

申请日：2018-04-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasutaka TOYODA ,  Norio HASEGAWA ,  Takeshi KATO ,  Hitoshi SUGAHARA ,  Yutaka HOJO ,  Daisuke HIBINO ,  Hiroyuki SHINDO

IPC: G06T7/00 ,  H01J37/22 ,  G01N23/2251 ,  H01J37/28 ,  H01L21/66 ,  G01N23/225

CPC classification number: G06T7/001 ,  G01N23/225 ,  G01N23/2251 ,  G01N2223/6113 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12

Abstract: A pattern-measuring apparatus and a semiconductor-measuring system are provided which are able to obtain an evaluation result for suitably selecting processing with respect to a semiconductor device. In particular, there is proposed a pattern-measuring apparatus including an arithmetic device which compares a circuit pattern of an electronic device with a reference pattern, in which the arithmetic device classifies the circuit pattern in processing unit of the circuit pattern on the basis of a comparison of a measurement result between the circuit pattern and the reference pattern with at least two threshold values.

公开(公告)号：US10054556B2

公开(公告)日：2018-08-21

申请号：US15339496

申请日：2016-10-31

Applicant: Hermes Microvision Inc.

Inventor： You-Jin Wang ,  Chiyan Kuan ,  Chung-Shih Pan

IPC: A61N5/06 ,  G01N23/2251 ,  H05F3/02 ,  H01J37/20 ,  H01J37/02 ,  H01J37/28

CPC classification number: G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/202 ,  H01J2237/2448 ,  H01J2237/2602 ,  H01J2237/2811 ,  H01J2237/2813 ,  H05F3/02

Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

公开(公告)号：US20180204704A1

公开(公告)日：2018-07-19

申请号：US15871753

申请日：2018-01-15

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Masato SUZUKI ,  Satoshi TOMIMATSU ,  Makoto SATO

IPC: H01J37/20 ,  H01J37/28 ,  G01N23/2204 ,  H01J37/302 ,  H01J37/22

CPC classification number: H01J37/20 ,  G01N23/2204 ,  G01N2223/418 ,  H01J37/222 ,  H01J37/28 ,  H01J37/3023 ,  H01J2237/208 ,  H01J2237/2817 ,  H01J2237/31745

Abstract: Disclosed is a charged particle beam apparatus for automatically preparing a sample piece from a sample. The apparatus includes a charged particle beam irradiation optical system that irradiates a charged particle beam, a sample stage that moves with the sample placed thereon, a sample piece transferring device that holds and transports the sample piece separated and extracted from the sample, a holder fixing base that holds a sample piece holder to which the sample piece is transferred, and a computer that performs control of destroying the sample piece held by the sample piece transferring device when an abnormality occurs after the sample piece transferring device holds the sample piece.